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BFG505/X,235

P1-P3P4-P6P7-P9P10-P12P13-P13
NXP Semiconductors Product specification
NPN 9 GHz wideband transistors BFG505; BFG505/X
CHARACTERISTICS
T
j
= 25 °C unless otherwise specified.
Notes
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
2. V
CE
= 6 V; I
C
= 5 mA; R
L
=50Ω; T
amb
=25°C;
f
p
= 900 MHz; f
q
= 902 MHz;
measured at 2f
p
− f
q
= 898 MHz and 2f
q
− f
p
= 904 MHz.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
collector cut-off current V
CB
=6V; I
E
=0 −− 50 nA
h
FE
DC current gain I
C
= 5 mA; V
CE
= 6 V; see Fig.3 60 120 250
C
e
emitter capacitance I
C
=i
c
=0 V
EB
= 0.5 V; f = 1 MHz − 0.4 − pF
C
c
collector capacitance V
CB
=6V; I
E
=i
e
= 0; f = 1 MHz − 0.3 − pF
C
re
feedback capacitance I
C
= 0; V
CB
= 6 V; f = 1 MHz; see Fig.4 − 0.2 − pF
f
T
transition frequency I
C
= 5 mA; V
CE
= 6 V; f = 1 GHz;
see Fig.5
− 9 − GHz
G
UM
maximum unilateral
power gain; note 1
I
C
= 5 mA; V
CE
=6V;
T
amb
=25°C; f = 900 MHz
− 20 − dB
I
c
= 5 mA; V
CE
=6V;
T
amb
=25°C; f = 2 GHz
− 13 − dB
S
21
2
insertion power gain I
c
= 5 mA; V
CE
=6V;
T
amb
=25°C; f = 900 MHz
16 17 − dB
F noise figure Γ
s
= Γ
opt
; I
C
= 1.25 mA; V
CE
=6V;
T
amb
=25°C; f = 900 MHz
− 1.2 1.7 dB
Γ
s
= Γ
opt
; I
C
= 5 mA; V
CE
=6V;
T
amb
=25°C; f = 900 MHz
− 1.6 2.1 dB
Γ
s
= Γ
opt
; I
C
= 1.25 mA; V
CE
=6V;
T
amb
=25°C; f = 2 GHz
− 1.9 − dB
P
L1
output power at 1 dB gain
compression
I
C
= 5 mA; V
CE
=6V; R
L
=50Ω;
T
amb
=25°C; f = 900 MHz
− 4 − dBm
ITO third order intercept point note 2 − 10 − dBm
G
UM
10
S
21
2
1S
11
2
–()1S
22
2
–()
--------------------------------------------------------------
dB.log=
Rev. 04 - 22 November 2007
4 of 13
NXP Semiconductors Product specification
NPN 9 GHz wideband transistors BFG505; BFG505/X
Fig.3 DC current gain as a function of collector
current.
V
CE
=6V.
handbook, halfpage
0
250
50
100
150
h
FE
200
MRA639
10
−3
10
−2
10
−1
110
I
C
(mA)
10
2
Fig.4 Feedback capacitance as a function of
collector-base voltage.
I
C
= 0; f = 1 MHz.
handbook, halfpage
02 10
0.4
0.3
0.1
0
0.2
C
re
(pF)
46 8
V
CB
(V)
MRA640
Fig.5 Transition frequency as a function of
collector current.
T
amb
=25°C; f = 1 GHz.
handbook, halfpage
12
0
4
8
f
T
(GHz)
I
C
(mA)
MRA641
10
−1
11010
2
V
CE
= 6 V
V
CE
= 3 V
Fig.6 Gain as a function of collector current.
handbook, halfpage
04
I
C
(mA)
812
25
0
20
MSG
G
UM
15
gain
(dB)
10
5
MRA642
V
CE
= 6 V; f = 900 MHz.
G
UM
= maximum unilateral power gain;
MSG = maximum stable gain;
G
max
= maximum available gain.
Rev. 04 - 22 November 2007
5 of 13
NXP Semiconductors Product specification
NPN 9 GHz wideband transistors BFG505; BFG505/X
Fig.7 Gain as a function of collector current.
V
CE
= 6 V; f = 2 GHz.
G
UM
= maximum unilateral power gain;
MSG = maximum stable gain;
G
max
= maximum available gain.
handbook, halfpage
04
I
C
(mA)
812
25
0
20
15
gain
(dB)
10
5
MRA643
MSG
G
UM
G
max
Fig.8 Gain as a function of frequency.
V
CE
= 6 V; I
C
= 1.25 mA.
G
UM
= maximum unilateral power gain;
MSG = maximum stable gain;
G
max
= maximum available gain.
handbook, halfpage
50
gain
(dB)
0
10
MRA644
10
2
10
3
10
4
10
20
30
f (MHz)
40
G
UM
MSG
Fig.9 Gain as a function of frequency.
V
CE
= 6 V; I
C
= 5 mA.
G
UM
= maximum unilateral power gain;
MSG = maximum stable gain;
G
max
= maximum available gain.
handbook, halfpage
50
gain
(dB)
0
10
MRA645
10
2
10
3
10
4
10
20
30
f (MHz)
40
G
UM
MSG
G
max
Fig.10 Minimum noise figure and associated
available gain as functions of collector
current.
V
CE
=6V.
handbook, halfpage
5
0
1
2
5
0
−5
10
G
ass
(dB)
15
20
3
F
min
(dB)
I
C
(mA)
4
MRA650
10
1
2000 MHz
1000 MHz
2000 MHz
1000 MHz
f = 900 MHz
F
min
900 MHz
500 MHz
G
ass
10
−1
Rev. 04 - 22 November 2007
6 of 13
P1-P3P4-P6P7-P9P10-P12P13-P13

BFG505/X,235

Mfr. #:
Buy BFG505/X,235
Manufacturer:
NXP Semiconductors
Description:
RF Bipolar Transistors Single NPN 15V 18mA 150mW 60 9GHz
Lifecycle:
New from this manufacturer.
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