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BFG505/X,235

P1-P3P4-P6P7-P9P10-P12P13-P13
NXP Semiconductors Product specification
NPN 9 GHz wideband transistors BFG505; BFG505/X
Fig.11 Minimum noise figure and associated
available gain as functions of frequency.
V
CE
=6V.
a
ndbook, halfpage
5
0
1
2
5
0
−5
10
G
ass
(dB)
15
20
3
F
min
(dB)
f (MHz)
4
MRA651
10
2
10
4
10
3
G
ass
5 mA
F
min
5 mA
1.25 mA
I
C
= 1.25 mA
Fig.12 Noise circle figure.
handbook, full pagewidth
MRA652
0
0.2
0.6
0.4
0.8
1.0
1.0
5
2
1
0.5
0.2
0
0.2
0.5
1
2
5
0.2
stability
circle
pot. unst.
region
0.5 1 5
180°
−135°
−90°
−45°
0°
45°
90°
135°
F = 3 dB
F = 2 dB
F = 1.5 dB
2
F
min
= 1. 2 dB
Γ
OPT
Z
o
=50Ω.
V
CE
= 6 V; I
c
= 1.25 mA; f = 900 MHz.
Rev. 04 - 22 November 2007
7 of 13
NXP Semiconductors Product specification
NPN 9 GHz wideband transistors BFG505; BFG505/X
Fig.13 Noise circle figure.
handbook, full pagewidth
MRA653
0
0.2
0.6
0.4
0.8
1.0
1.0
5
2
1
0.5
0.2
0
0.2
0.5
1
2
5
0.2 0.5 2 5
180°
−135°
−90°
−45°
0°
45°
90°
135°
stability
circle
pot. unst.
region
F = 3 dB
F = 4 dB
F = 2.5 dB
1
F
min
= 1. 9 dB
Γ
OPT
Z
o
=50Ω.
V
CE
= 6 V; I
c
= 1.25 mA; f = 2000 MHz.
Rev. 04 - 22 November 2007
8 of 13
NXP Semiconductors Product specification
NPN 9 GHz wideband transistors BFG505; BFG505/X
Fig.14 Common emitter input reflection coefficient (S
11
).
handbook, full pagewidth
MRA646
0
0.2
0.6
0.4
0.8
1.0
1.0
5
2
1
0.5
0.2
0
0.2
0.5
1
2
5
0.2 0.5 1 2 5
180°
−135°
−90°
−45°
0°
45°
90°
135°
3 GHz
40 MHz
V
CE
= 6 V; I
C
= 5 mA.
Z
o
=50Ω.
Fig.15 Common emitter forward transmission coefficient (S
21
).
handbook, full pagewidth
MRA647
15 12 9 6 3
180°
−135°
−90°
−45°
0°
45°
90°
135°
3 GHz
40 MHz
V
CE
= 6 V; I
C
= 5 mA.
Rev. 04 - 22 November 2007
9 of 13
P1-P3P4-P6P7-P9P10-P12P13-P13

BFG505/X,235

Mfr. #:
Buy BFG505/X,235
Manufacturer:
NXP Semiconductors
Description:
RF Bipolar Transistors Single NPN 15V 18mA 150mW 60 9GHz
Lifecycle:
New from this manufacturer.
Delivery:
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