IRF60R217
2
2016-01-05
Absolute Maximum Rating
Symbol Parameter Max. Units
A
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 58
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 41
I
DM
Pulsed Drain Current 217
P
D
@T
C
= 25°C Maximum Power Dissipation 83 W
Linear Derating Factor 0.56 W/°C
V
GS
Gate-to-Source Voltage ± 20 V
T
J
T
STG
Operating Junction and
Storage Temperature Range
-55 to + 175
°C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy
85
mJ
E
AS (Thermally limited)
Single Pulse Avalanche Energy
124
I
AR
Avalanche Current
See Fig 15, 16, 23a, 23b
A
E
AR
Repetitive Avalanche Energy mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
R
JC
Junction-to-Case
––– 1.8
°C/W
R
JA
Junction-to-Ambient (PCB Mount)
––– 50
R
JA
Junction-to-Ambient
––– 110
Static @ T
J
= 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 60 ––– ––– V V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient ––– 0.047 ––– V/°C Reference to 25°C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
––– 8.0 9.9 V
GS
= 10V, I
D
= 35A
––– 10 ––– V
GS
= 6.0V, I
D
= 18A
V
GS(th)
Gate Threshold Voltage 2.1 ––– 3.7 V V
DS
= V
GS
, I
D
= 50µA
I
DSS
Drain-to-Source Leakage Current
––– ––– 1.0
µA
V
DS
= 60V, V
GS
= 0V
––– ––– 150 V
DS
= 60V,V
GS
= 0V,T
J
=125°C
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
nA
V
GS
= 20V
Gate-to-Source Reverse Leakage ––– ––– -100 V
GS
= -20V
R
G
Gate Resistance ––– 2.0 –––
m
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.14mH, R
G
= 50, I
AS
= 35A, V
GS
=10V.
I
SD
35A, di/dt 862A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width 400µs; duty cycle 2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
R
is measured at T
J
approximately 90°C.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994.please refer to application note to AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf
Limited by T
Jmax
, starting T
J
= 25°C, L = 1mH, R
G
= 50, I
AS
= 16A, V
GS
=10V.
