IRF60R217 Datasheet IRF60R217 | P4-P6



IRF60R217

4

2016-01-05

Fig 6. Normalized On-Resistance vs. Temperature

Fig 5. Typical Transfer Characteristics

Fig 4. Typical Output Characteristics

Fig 3. Typical Output Characteristics

Fig 7. Typical Capacitance vs. Drain-to-Source Voltage

Fig 8. Typical Gate Charge vs. Drain-to-Source Voltage

0.1 1 10 100

V

DS

, Drain-to-Source Voltage (V)

100

1000

10000

C

,

C

a

p

a

c

i

t

a

n

c

e

(

p

F

)

V

GS

= 0V, f = 1 MHZ

C

iss

= C

gs

+ C

gd

, C

ds

SHORTED

C

rss

= C

gd

C

oss

= C

ds

+ C

gd

C

oss

C

rss

C

iss

-60 -40 -20 0 20 40 60 80 100120140160180

T

J

, Junction Temperature (°C)

0.5

1.0

1.5

2.0

2.5

R

D

S

(

o

n

)

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

O

n

R

e

s

i

s

t

a

n

c

e

(

N

o

r

m

a

l

i

z

e

d

)

I

D

= 35A

V

GS

= 10V

0 102030405060

Q

G

,

Total Gate Charge (nC)

0

2

4

6

8

10

12

14

V

G

S

,

G

a

t

e

-

t

o

-

S

o

u

r

c

e

V

o

l

t

a

g

e

(

V

)

V

DS

= 48V

V

DS

= 30V

VDS= 12V

I

D

= 35A

0.1 1 10 100

V

DS

, Drain-to-Source Voltage (V)

1

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V



60µs

PULSE WI DTH

Tj = 25°C

4.5V

0.1 1 10 100

V

DS

, Drain-to-Source Voltage (V)

1

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

4.5V



60µs

PULSE WIDTH

Tj = 175°C

VGS

TOP 15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

BOTTOM 4.5V

2 3 4 5 6 7 8

V

GS

, Gate-to-Source Voltage (V)

0.1

1

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

T

J

= 25°C

T

J

= 175°C

V

DS

= 25V



60µs PULSE WIDTH



IRF60R217

5

2016-01-05

Fig 10. Maximum Safe Operating Area

Fig 11. Drain-to-Source Breakdown Voltage

Fig 9. Typical Source-Drain Diode Forward Voltage

Fig 13. Typical On-Resistance vs. Drain Current

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

V

SD

, Source-to-Drain Voltage (V)

0.1

1

10

100

1000

I

S

D

,

R

e

v

e

r

s

e

D

r

a

i

n

C

u

r

e

n

t

(

A

)

T

J

= 25°C

T

J

= 175°C

V

GS

= 0V

-60 -40 -20 0 20 40 60 80 100120140160180

T

J

, Temperature ( °C )

60

65

70

75

V

(

B

R

)

D

S

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

B

r

e

a

k

d

o

w

n

V

o

l

t

a

g

e

(

V

)

Id = 1.0mA

0 102030405060

V

DS,

Drain-to-Source Voltage (V)

0.0

0.1

0.2

0.3

0.4

E

n

e

r

g

y

(

µ

J

)

Fig 12. Typical C

oss

Stored Energy

0 20 40 60 80 100 120 140 160

I

D

, Drain Current (A)

4

8

12

16

20

24

R

D

S

(

o

n

)

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

O

n

R

e

s

i

s

t

a

n

c

e

(

m



)

VGS = 6.0V

VGS = 7.0V

VGS = 8.0V

VGS = 10V

0.1 1 10 100

V

DS

, Drain-toSource Voltage (V)

0.01

0.1

1

10

100

1000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

e

n

t

(

A

)

Tc = 25°C

Tj = 175°C

Single Pulse

1msec

10msec

OPERATION IN THIS AREA

LIMITED BY RDS(on)

100µsec

DC



IRF60R217

6

2016-01-05

Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 16. Maximum Avalanche Energy vs. Temperature

Fig 15. Avalanche Current vs. Pulse Width

Notes on Repetitive Avalanche Curves, Figures 15, 16:

(For further info, see AN-1005 at www.irf.com)

1.Avalanche failures assumption:

Purely a thermal phenomenon and failure occurs at a

temperature far in excess of T

jmax

. This is validated for every

part type.

2. Safe operation in Avalanche is allowed as long asT

jmax

is not

exceeded.

3. Equation below based on circuit and waveforms shown in Figures

23a, 23b.

4. P

D (ave)

= Average power dissipation per single avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage

increase during avalanche).

6. I

av

= Allowable avalanche current.

7. T = Allowable rise in junction temperature, not to exceed T

jmax

(assumed as 25°C in Figures 14, 15).

t

av

= Average time in avalanche.

D = Duty cycle in avalanche = tav ·f

Z

thJC

(D, t

av

) = Transient thermal resistance, see Figure 14)

PD (ave) = 1/2 ( 1.3·BV·I

av

) = T/ Z

thJC

I

av

= 2T/ [1.3·BV·Z

th

]

E

AS (AR)

= P

D (ave)·

t

av



1E-006 1E-005 0.0001 0.001 0.01 0.1

t

1

, Rectangular Pulse Duration (sec)

0.001

0.01

0.1

1

10

T

h

e

r

ma

l

R

e

s

p

o

n

s

e

(

Z

t

h

J

C

)

°

C

/

W

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

25 50 75 100 125 150 175

Starting T

J

, Junction Temperature (°C)

0

20

40

60

80

100

E

A

R

,

A

v

a

l

a

n

c

h

e

E

n

e

r

g

y

(

m

J

)

TOP Single Pulse

BOTTOM 1.0% Duty Cycle

I

D

= 35A

1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01

tav (sec)

0.1

1

10

100

A

v

a

l

a

n

c

h

e

C

u

r

e

n

t

(

A

)

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming



j = 25°C and

Tstart = 150°C.

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming



Tj = 150°C and

Tstart = 25°C (Single Pulse)

IRF60R217

IRF60R217

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