This is information on a product in full production.
February 2015 DocID023772 Rev 4 1/13
STPTIC
Parascan™ tunable integrated capacitor
Datasheet - production data
Features
High power capability (+36 dBm)
High tuning range (3.5/1)
High quality factor (Q)
High linearity device
Low leakage current
Capacitor bias is DC blocked
Frequency of operation from DC to 3 GHz
8 values available: 1.2 pF, 2.7 pF, 3.3 pF,
3.9 pF, 4.7 pF, 5.6 pF, 6.8 pF and 8.2 pF
Analog control voltage
Compatible with high voltage control IC
(STHVDAC series)
Available in plastic molded package:
µQFN package 1.2 x 1.6 x 0.9 mm
Flip Chip 0.65 x 1.0 x 0.3 mm
Flip Chip 0.65 x 1.2 x 0.3 mm
ECOPACK
®
2 compliant component
Benefit
RF tunable passive implementation in mobile
phones to optimize antenna radiated
performances.
Applications
Cellular Antenna open loop tunable matching
network in multi-band GSM/WCDMA/LTE
mobile phone
Open loop tunable RF filters
Description
The ST integrated tunable capacitor, offers
excellent RF performance, low power
consumption and high linearity required in
adaptive RF tuning applications. The fundamental
building block of PTIC is a tunable material called
Parascan, which is a version of barium strontium
titanate (BST) developed by Paratek microwave.
BST capacitances are tunable capacitances
intended for use in mobile phone application, and
dedicated to RF tunable applications. These
tunable capacitances are controlled through a
bias voltage ranging from 2 to 20 V. The use of
BST tunable capacitance in mobile phones
enables significant improvement in terms of
radiated performances making the performance
almost insensitive to the external environment.
TM: Parascan is a trade mark of Paratek microwave Inc.
STPTIC
STPTIC
µQFN Flip Chip
www.st.com
Functional characteristics STPTIC
2/13 DocID023772 Rev 4
1 Functional characteristics
Figure 1. PTIC functional block diagram
Table 1. Signal descriptions
Ball/Pad number Pin name Description
A1 DC BIAS DC bias voltage
B1 RF2 RF input / output
C1 RF2 RF input / output
A2 NC Not connected
B2 RF1 RF input / output
C2 RF1 RF input / output
DC Bias
C1
A1
B1
B2
C2
A2
NC
RF1RF2
RF1RF2
DocID023772 Rev 4 3/13
STPTIC Electrical characteristics
13
2 Electrical characteristics
Table 2. Absolute maximum ratings (limiting values)
Symbol Parameter Rating Unit
P
IN
Input peak power RF
IN
(CW mode)/all RF ports +36 dBm
V
ESD(HBM)
Human body model, JESD22-A114-B, all I/O
STPTIC-12 500
V
STPTIC-27 400
(1)
1. Currently failing around 400 V, improvement on going to withstand 500 V on 2p7 and 3p3.
STPTIC-33 400
(1)
STPTIC-39 500
STPTIC-47 500
STPTIC-56 500
STPTIC-68 500
STPTIC-82 500
V
ESD(MM)
Machine model, JESD22-A114-B, all I/O 100 V
T
device
Device temperature +125
°C
T
stg
Storage temperature -55 to +150
V
x
Bias voltage 25 V
Table 3. Recommended operating conditions
Symbol Parameter
Rating
Unit
Min. Typ. Max.
P
IN
RF input power (50% duty cycle mode)
RF
IN
(LB)
RF
IN
(HB)
+35
+33
dBm
F
OP
Operating frequency 700 3000 MHz
T
device
Device temperature +100
°C
T
OP
Operating temperature -30 +85
V
x
Bias voltage 2 20 V

STPTIC-68F1M6

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
Trimmer / Variable Capacitors IPAD
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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