HMC903-SX Datasheet HMC903, HMC903-SX | P1-P3

6 GHz to 18 GHz GaAs, pHEMT, MMIC,

Low Noise Amplifier

Data Sheet

HMC903-Die

Rev. A Document Feedback

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FEATURES

Noise figure: 1.6 dB typical

Small signal gain: 19 dB typical

Output P1dB: 16 dBm typical

Single-supply voltage: 3.5 V at 90 mA typical

Output IP3: 27 dBm typical

50 Ω matched input/output

Self biased with optional bias control for quiescent drain

control (I

) reduction with no radio frequency (RF) applied

Die size: 1.33 mm × 1.08 mm × 0.102 mm

APPLICATIONS

Point to point radios

Point to multipoint radios

Military and space

Test instrumentation

GENERAL DESCRIPTION

The HMC903-Die is a gallium arsenide (GaAs), pseudomorphic

high electron mobility transistor (pHEMT), monolithic

microwave integrated circuit (MMIC), low noise amplifier

(LNA), which is self biased with the optional bias control for I

reduction. It operates between 6 GHz and 18 GHz. This LNA

provides 19 dB of small signal gain, 1.6 dB noise figure, and an

output third-order intercept (IP3) of 27 dBm, requiring only

90 mA of supply current from a 3.5 V supply. The output power

for a 1 dB compression (P1dB) of 16 dBm enables the LNA to

function as a local oscillator (LO) driver for balanced, I/Q, or

image rejection mixers. The HMC903-Die also features

inputs/outputs that are dc blocked and internally matched to

50 Ω for ease of integration into multichip modules (MCMs).

All data is taken with the HMC903-Die in a 50 Ω test fixture

connected via 0.025 mm (1 mil) diameter with bonds of

0.31 mm (12 mil) length.

FUNCTIONAL BLOCK DIAGRAM

HMC903-Die

RFIN

RFOUT

14481-001

Figure 1.

HMC903-Die Data Sheet

Rev. A | Page 2 of 13

TABLE OF CONTENTS

Features .............................................................................................. 1

Applications ....................................................................................... 1

General Description ......................................................................... 1

Functional Block Diagram .............................................................. 1

Revision History ............................................................................... 2

Specifications ..................................................................................... 3

Electrical Specifications ............................................................... 3

Absolute Maximum Ratings ............................................................ 4

ESD Caution .................................................................................. 4

Pin Configuration and Function Descriptions ............................. 5

Interface Schematics..................................................................... 5

Typical Performance Characteristics ..............................................6

Theory of Operation .........................................................................8

Applications Information .................................................................9

Mounting and Bonding Techniques for Millimeterwave GaAs

MMICs ............................................................................................. 10

Handling Precautions ................................................................ 10

Typical Application Circuits ..................................................... 11

Assembly Diagrams ................................................................... 12

Outline Dimensions ....................................................................... 13

Ordering Guide .......................................................................... 13

REVISION HISTORY

This Hittite Microwave Products data sheet has been reformatted to

meet the styles and standards of Analog Devices, Inc.

3/2017—Rev. 01.0712 to Rev. A

Updated Format .................................................................. Universal

Changes to Features Section............................................................ 1

Changes to Table 1 ............................................................................ 3

Added Electrostatic Discharge (ESD) Sensitivity, Human Body

Model (HBM) Parameter, Table 2 .................................................. 4

Changes to Table 3 ............................................................................ 5

Added Theory of Operation Section and Figure 19; Renumbered

Sequentially ......................................................................................... 8

Added Applications Information Section ...................................... 9

Changes to Figure 20 and Figure 21 ............................................ 10

Added Typical Application Circuits Section and Figure 22 and

Figure 23 .......................................................................................... 11

Updated Outline Dimensions ....................................................... 13

Changes to Ordering Guide .......................................................... 13

Data Sheet HMC903-Die

Rev. A | Page 3 of 13

SPECIFICATIONS

ELECTRICAL SPECIFICATIONS

= 25°C, V

1 = V

2 = 3.5 V, I

= 90 mA. V

1 = V

2 = open for normal, self biased operation.

Table 1.

Parameter Symbol Min Typ Max Unit Test Conditions/Comments

FREQUENCY RANGE 6 18 GHz

GAIN 17 19 dB

Gain Variation over Temperature 0.013 dB/°C

RETURN LOSS

Input 11 dB

Output 13 dB

OUTPUT

Output Power for 1 dB Compression

P1dB

dBm

Saturated Output Power P

SAT

18 dBm

Output Third-Order Intercept IP3 27 dBm

NOISE FIGURE NF 1.6 2.1 dB

SUPPLY CURRENT I

90 mA V

= 3.5 V, V

1 = V

2 = open

P1-P3 P4-P6 P7-P9 P10-P12 P13-P13

HMC903-SX

Mfr. #:

Buy HMC903-SX

Manufacturer:

Analog Devices Inc.

Description:

RF Amplifier LNA HIP3 6-18GHz

Lifecycle:

New from this manufacturer.

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HMC903-SX

HMC903-SX

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