ZXMC3A17DN8
SEMICONDUCTORS
ISSUE 1 - OCTOBER 2005
2
ADVANCE INFORMATION
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient
(a) (d)
R
⍜JA
100 °C/W
Junction to Ambient
(a) (e)
R
⍜JA
70 °C/W
Junction to Ambient
(b) (d)
R
⍜JA
60 °C/W
NOTES:
(a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
(b) For a dual device surface mounted on FR4 PCB measured at t ⱕ 10 sec.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width = 300s - pulse width limited by maximum junction temperature.
(d) For a dual device with one active die.
(e) For dual device with two active die running at equal power.
THERMAL RESISTANCE
PARAMETER SYMBOL N-channel P-channel UNIT
Drain-Source Voltage V
DSS
30 -30 V
Gate-Source Voltage V
GS
±20 ±20 V
Continuous Drain Current
(V
GS
= 10V; T
A
=25°C)
(b)(d)
(V
GS
= 10V; T
A
=70°C)
(b)(d)
(V
GS
= 10V; T
A
=25°C)
(a)(d)
I
D
5.4
4.3
4.1
-4.4
-3.6
-3.4
A
Pulsed Drain Current
(c)
I
DM
23 -20 A
Continuous Source Current (Body Diode)
(b)
I
S
2.6 -2.5 A
Pulsed Source Current (Body Diode)
(c)
I
SM
23 -20 A
Power Dissipation at T
A
=25°C
(a) (d)
Linear Derating Factor
P
D
1.25
10
W
mW/°C
Power Dissipation at T
A
=25°C
(a) (e)
Linear Derating Factor
P
D
1.8
14
W
mW/°C
Power Dissipation at T
A
=25°C
(b) (d)
Linear Derating Factor
P
D
2.1
17
W
mW/°C
Operating and Storage Temperature Range T
j
,T
stg
-55 to +150 °C
ABSOLUTE MAXIMUM RATINGS
