OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

ZXMC3A17DN8TC

P1-P3P4-P6P7-P9P10-P10
ZXMC3A17DN8
SEMICONDUCTORS
ISSUE 1 - OCTOBER 2005
ADVANCE INFORMATION
4
PARAMETER SYMBOL MIN.
TYP.
MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown
Voltage
V
(BR)DSS
30 V I
D
=250␮A, V
GS
=0V
Zero Gate Voltage Drain
Current
I
DSS
0.5 ␮AV
DS
=30V, V
GS
=0V
Gate-Body Leakage I
GSS
100
nA V
GS
=±20V, V
DS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
1.0 V I
D
=250␮A, V
DS
=V
GS
Static Drain-Source On-State
Resistance
(1)
R
DS(on)
0.050
0.065
⍀
⍀
V
GS
= 10V, I
D
=7.8A
V
GS
=4.5V,I
D
=6.8A
Forward
Transconductance
(1) (3)
g
fs
10 S V
DS
= 10V, I
D
=7.8A
DYNAMIC
(3)
Input Capacitance C
iss
600 pF
V
DS
= 25V, V
GS
=0V
f=1MHz
Output Capacitance C
oss
104 pF
Reverse Transfer Capacitance C
rss
58.5 pF
SWITCHING
(2) (3)
Turn-On-Delay Time t
d(on)
2.9 ns
V
DD
=15V,I
D
=3.5A
R
G
≅ 6.0⍀,
V
GS
=10V
Rise Time t
r
6.4 ns
Turn-Off Delay Time t
d(off)
16 ns
Fall Time t
f
11.2 ns
Gate Charge Q
g
6.9 nC V
DS
= 15V, V
GS
=5V
I
D
=3.5A
Total Gate Charge Q
g
12.2 nC
V
DS
= 15V, V
GS
=10V
I
D
=3.5A
Gate-Source Charge Q
gs
1.7 nC
Gate-Drain Charge Q
gd
2.4
nC
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
V
SD
0.85 0.95 V T
j
=25°C, I
S
=3.2A,
V
GS
=0V
Reverse Recovery Time
(3)
t
rr
18.8 ns
T
j
=25°C, I
F
=3.5A,
di/dt=100A/␮s
Reverse Recovery Charge
(3)
Q
rr
14.1 nC
N-CHANNEL
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
(1) Measured under pulsed conditions. Pulse width ⱕ 300ms; Duty cycle ⱕ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ZXMC3A17DN8
SEMICONDUCTORS
ISSUE 1 - OCTOBER 2005
ADVANCE INFORMATION
5
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS
STATIC
Drain-Source Breakdown
Voltage
V
(BR)DSS
-30 V I
D
= -250␮A, V
GS
=0V
Zero Gate Voltage Drain
Current
I
DSS
-1.0 ␮AV
DS
= -30V, V
GS
=0V
Gate-Body Leakage I
GSS
100 nA V
GS
=±20V, V
DS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
-1.0 V I
D
= -250␮A, V
DS
=V
GS
Static Drain-Source
On-State Resistance
(1)
R
DS(on)
0.070
0.110
⍀
⍀
V
GS
= -10V, I
D
=-3.2A
V
GS
= -4.5V, I
D
= -2.5A
Forward
Transconductance
(1) (3)
g
fs
6.4 S V
DS
= -15V, I
D
= -3.2A
DYNAMIC
(3)
Input Capacitance C
iss
630 pF
V
DS
= -15V, V
GS
=0V
f=1MHz
Output Capacitance C
oss
113 pF
Reverse Transfer
Capacitance
C
rss
78 pF
SWITCHING
(2) (3)
Turn-On-Delay Time t
d(on)
1.7 ns
V
DD
=-15V,I
D
=-1A
R
G
≅ 6.0⍀,
V
GS
= -10V
Rise Time t
r
2.9 ns
Turn-Off Delay Time t
d(off)
29.2 ns
Fall Time t
f
8.7 ns
Gate Charge Q
g
8.3 nC V
DS
= -15V, V
GS
=-5V
I
D
= -3.2A
Total Gate Charge Q
g
15.8 nC
V
DS
= -15V, V
GS
=
-10V
I
D
= -3.2A
Gate-Source Charge Q
gs
1.8 nC
Gate Drain Charge Q
gd
2.8 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
V
SD
-0.85 -0.95 V T
j
=25°C, I
S
= -2.5A,
V
GS
=0V
Reverse Recovery Time
(3)
t
rr
19.5 ns
T
j
=25°C, I
S
= -1.7A,
di/dt=100A/␮s
Reverse Recovery Charge
(3)
Q
rr
16.3 nC
P-CHANNEL
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
NOTES:
(1) Measured under pulsed conditions. Pulse width ⱕ 300ms; Duty cycle ⱕ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ADVANCE INFORMATION
N-CHANNEL TYPICAL CHARACTERISTICS
ZXMC3A17DN8
SEMICONDUCTORS
ISSUE 1 - OCTOBER 2005
6
P1-P3P4-P6P7-P9P10-P10

ZXMC3A17DN8TC

Mfr. #:
Buy ZXMC3A17DN8TC
Manufacturer:
Diodes Incorporated
Description:
MOSFET 30V Enhancement Mode
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet