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DMS3019SSD-13

P1-P3P4-P6P7-P9P10-P10
DMS3019SSD
ASYMMETRIC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
• DIOFET Utilizes a Unique Patented Process to Monolithically
Integrate a MOSFET and a Schottky in a Single Die To Deliver:
• Low R
DS(on)
—Minimizes Conduction Loss
• Low V
SD
—Reduces Losses Due to Body Diode Construction
• Low Q
rr
—Lower Q
rr
of Integrated Schottky Reduces Body
Diode Switching Losses
• Low Gate Capacitance (Q
g
/Q
gs
) Ratio—Reduces Risk of
Shoot-Through or Cross Conduction Currents at High
Frequencies
• Avalanche Rugged—I
AR
and E
AR
Rated
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
•
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SO-8
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram Below
• Weight: 0.072 grams (Approximate)
Ordering Information (Note 3)
Part Number
Case
Packaging
DMS3019SSD-13
SO-8
2500/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds
4. For packaging details, go to our website at http://www.diodes.com/.
Marking Information
D2
S2/D1
G2
S1
S2/D1
S2/D1
D2
G1
Top View
Internal Schematic
Top View
Logo
Part no.
Year: “09” = 2009
Week: 01 ~ 53
1
4
8
5
S3019SD
YY
WW
D
1
S
1
G
1
D
2
S
2
G
2
N-Channel MOSFETN-Channel MOSFET +
Integrated Schottky Diode
Q1 Q2
NOT RECOMMENDED FOR NEW DESIGN
NO ALTERNATE PRODUCT
DMS3019SSD
Document number: DS35053 Rev. 3 - 3
1 of 10
www.diodes.com
August 2018
© Diodes Incorporated
DMS3019SSD
Maximum Ratings – Q1 @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
30
V
Gate-Source Voltage
V
GSS
±12
V
Continuous Drain Current (Note 4) V
GS
= 10V
Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
7.0
5.6
A
Continuous Drain Current (Note 5) V
GS
= 10V
Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
9.0
7.0
A
Continuous Drain Current (Note 5) V
GS
= 4.5V
Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
8.0
6.5
A
Pulsed Drain Current (Note 6)
I
DM
40
A
Avalanche Current (Notes 6 & 7)
I
AR
13
A
Repetitive Avalanche Energy (Notes 6 & 7) L = 0.3mH
E
AR
25.4
mJ
Maximum Ratings – Q2 @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
30
V
Gate-Source Voltage
V
GSS
±20
V
Continuous Drain Current (Note 4) V
GS
= 10V
Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
5.7
4.6
A
Continuous Drain Current (Note 5) V
GS
= 10V
Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
7.0
5.6
A
Continuous Drain Current (Note 5) V
GS
= 4.5V
Steady
State
T
A
= 25°C
T
A
= 70°C
I
D
6.0
4.7
A
Pulsed Drain Current (Note 6)
I
D
40
A
Avalanche Current (Notes 6 & 7)
I
AR
16
A
Repetitive Avalanche Energy (Notes 6 & 7) L = 0.1mH
E
AR
12.8
mJ
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 4)
P
D
1.19
W
Thermal Resistance, Junction to Ambient @T
A
= 25°C (Note 4)
R
θJA
107
°C/W
Power Dissipation (Note 5)
P
D
1.79
W
Thermal Resistance, Junction to Ambient @T
A
= 25°C (Note 5)
R
θJA
70
°C/W
Operating and Storage Temperature Range
T
J
, T
STG
-55 to +150
°C
Notes: 4. Device mounted on FR-4 substrate PCB, with minimum recommended pad layout. The value in any given application depends on the user’s specific
board design. Device contains two active die running at equal power.
5. Device mounted on 1 inch × 1 inch FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. Device contains two active die running
at equal power.
6. Repetitive rating, pulse width limited by junction temperature.
7. I
AR
and E
AR
rating are based on low frequency and duty cycles to keep T
J
= 25°C
DMS3019SSD
Document number: DS35053 Rev. 3 - 3
2 of 10
www.diodes.com
August 2018
© Diodes Incorporated
DMS3019SSD
Electrical Characteristics – Q1 @ T
A
= 25°C unless otherwise stated
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
30
—
—
V
V
GS
= 0V, I
D
= 1mA
Zero Gate Voltage Drain Current
I
DSS
—
—
0.1
mA
V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage
I
GSS
—
—
±100
nA
V
GS
= ±12V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
1.0
—
2.4
V
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance
R
DS (ON)
—
10
12
15
18
mΩ
V
GS
= 10V, I
D
= 9A
V
GS
= 4.5V, I
D
= 7A
Forward Transfer Admittance
|Y
fs
|
—
5
—
S
V
DS
= 5V, I
D
= 9A
Diode Forward Voltage
V
SD
—
0.4
1
V
V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
—
1932
—
pF
V
DS
= 15V, V
GS
= 0V,
f = 1.0MHz
Output Capacitance
C
oss
—
154
—
Reverse Transfer Capacitance
C
rss
—
121
—
Gate Resistance
R
g
—
2.7
—
Ω
V
DS
= 0V, V
GS
= 0V, f = 1MHz
Total Gate Charge (V
GS
= 4.5V)
Q
g
—
18.1
—
nC
V
DS
= 15V, V
GS
= 4.5V, I
D
= 9A
Total Gate Charge (V
GS
= 10V)
Q
g
—
42.0
—
V
DS
= 15V, V
GS
= 10V, I
D
= 9A
Gate-Source Charge
Q
gs
—
4.5
—
Gate-Drain Charge
Q
gd
—
4.0
—
Turn-On Delay Time
t
D(on)
—
6.16
—
ns
V
GS
= 10V, V
DS
= 15V,
R
G
= 3Ω, R
L
= 1.7Ω
Turn-On Rise Time
t
r
—
7.22
—
Turn-Off Delay Time
t
D(off)
—
36.76
—
Turn-Off Fall Time
t
f
—
5.38
—
Notes: 8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
DMS3019SSD
Document number: DS35053 Rev. 3 - 3
3 of 10
www.diodes.com
August 2018
© Diodes Incorporated
P1-P3P4-P6P7-P9P10-P10

DMS3019SSD-13

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MOSFET 2N-CH 30V 7A/5.7A 8SO
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