DMS3019SSD-13

P1-P3 P4-P6 P7-P9 P10-P10

DMS3019SSD

0 10 2015 25 30

Fig. 14 Typical On-Resistance

vs. Drain Current and Gate Voltage

I , DRAIN-SOURCE CURRENT (A)

D

5

0.05

R , DRAIN-

SOURCE ON-RESISTANCE ( )

DS(ON)

Ω

0

0.04

0.01

0.02

0.03

V = 4.5V

GS

V = 10V

GS

0

5

10 15 20 25 30

I , DRAIN CURRENT (A)

D

Fig. 15 Typical On-Resistance

vs. Drain Current and Temperature

0

0.01

0.02

0.04

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON)

Ω

0.03

T = 85°C

A

T = 25°C

A

T = -55°C

A

T = 150°C

A

V = 10V

GS

T = 125°C

A

0.5

0.7

0.9

1.1

1.3

1.5

1.7

Fig. 16 On-Resistance Variation with Temperature

-50 -25 0 25 50

75 100

125

150

T , AMBIENT TEMPERATURE (°C)

A

R , DRAIN-SOU

RCE

ON-RESISTANCE (NORMALIZED)

DSON

V = 4.5V

I = 5A

GS

D

V = 10V

I = 10A

GS

D

0

0.01

0.02

0.03

0.04

0.05

0.06

Fig. 17 On-Resistance Variation with Temperature

-50 -25 0

25 50 75 100 125 150

T , AMBIENT TEMPERATURE (°C)

A

R , DRAIN-SOURCE ON-RESISTANCE ( )

DSON

Ω

V = 4.5V

I = 5A

GS

D

V = 10V

I = 10A

GS

D

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

Fig. 18 Gate Threshold Variation vs. Ambient Temperature

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERATURE (°C)

A

V , GATE THRESHOLD VOLTAGE (V)

GS(TH)

I = 1mA

D

I = 250µA

D

0.2 0.4 0.6 0.8 1.0 1.2

Fig. 19 Diode Forward Voltage vs. Current

V , SOURCE-DRAIN VOLTAGE (V)

SD

0

2

4

6

8

10

12

14

16

18

20

I , SOURCE CURRENT (A)

S

T = 25°C

A

DMS3019SSD

Document number: DS35053 Rev. 3 - 3

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© Diodes Incorporated

DMS3019SSD

0 5 10 15 20 25 30

Fig. 20 Typical Total Capacitance

V , DRAIN-SOURCE VOLTAGE (V)

DS

10

1,000

C, CAPACITANCE (pF)

100

C

iss

C

rss

C

oss

f = 1MHz

0 5 10 15 20 25 30

Fig. 21 Typical Leakage Current

vs. Drain-Source Voltage

V , DRAIN-SOURCE VOLTAGE (V)

DS

1

10

100

1,000

10,000

I ,

LEA

KAG

E CU

RRE

NT

(nA)

DSS

T = 25°C

A

T = 85°C

A

T = 125°C

A

T = 150°C

A

0

2 4 6 8 10 12

Fig. 22 Gate-Charge Characteristics

Q , TOTAL GATE CHARGE (nC)

g

0

2

4

6

8

10

V , GATE

-SOURCE VOLTA

GE (V)

GS

V = 15V

I = 10A

DS

D

0.001 0.01 0.1 1 10 100 1,000

Fig. 23 Transient Thermal Response

t , PULSE DURATION TIME (s)

1

0.00001 0.0001

0.001

0.01

0.1

1

r(t), TRANSIENT THERMAL RESISTANCE

T - T = P * R (t)

Duty Cycle, D = t /t

J A JA

12

θ

R (t) = r(t) *

θJA

R

R = 113°C/W

θ

θ

JA

JA

P(pk)

t

1

t

2

D = 0.7

D = 0.3

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

D = Single Pulse

D = 0.9

D = 0.5

DMS3019SSD

Document number: DS35053 Rev. 3 - 3

8 of 10

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August 2018

© Diodes Incorporated

DMS3019SSD

Package Outline Dimensions

Please see http://www.diodes.com/package-outlines.html for the latest version.

SO-8

1

b

e

E

A

A1

9° ( All sides)

4°±3°

c

Q

h

45°

R 0.1

7°

D

E0

E1

L

Seating Plane

Gauge Plane

SO-8

Dim

Min

Max

Typ

A

1.40

1.50

1.45

A1

0.10

0.20

0.15

b

0.30

0.50

0.40

c

0.15

0.25

0.20

D

4.85

4.95

4.90

E

5.90

6.10

6.00

E1

3.80

3.90

3.85

E0

3.85

3.95

3.90

e

--

--

1.27

h

-

--

0.35

L

0.62

0.82

0.72

Q

0.60

0.70

0.65

All Dimensions in mm

Suggested Pad Layout

Please see http://www.diodes.com/package-outlines.html for the latest version.

SO-8

C

X

Y

Y1

X1

Dimensions

Value (in mm)

C

1.27

X

0.802

X1

4.612

Y

1.505

Y1

6.50

DMS3019SSD

Document number: DS35053 Rev. 3 - 3

9 of 10

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August 2018

© Diodes Incorporated

P1-P3 P4-P6 P7-P9 P10-P10

DMS3019SSD-13

Mfr. #:

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MOSFET 2N-CH 30V 7A/5.7A 8SO

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