DMS3019SSD-13 Datasheet DMS3019SSD-13 | P4-P6

DMS3019SSD

0

0.5 1 1.5 2

Fig. 1 Typical Output Characteristic

V , DRAIN-SOURCE VOLTAGE (V)

DS

0

10

15

20

25

30

I , DR

AIN CURRENT (

A)

D

5

V = 2.0V

GS

V = 2.2V

GS

V = 2.5V

GS

V = 3.0V

GS

V = 3.5V

GS

V = 4.5V

GS

V = 4.0V

GS

Fig. 2 Typical Transfer Characteristic

V , GATE-SOURCE VOLTAGE (V)

GS

0 1 1.5 2 2.5 30.5

0

5

10

15

20

25

30

I , DRAIN CURRENT (A)

D

V = 85°C

GS

V = 125°C

GS

V = 25°C

GS

V = -55°C

GS

V = 150°C

GS

V = 5V

DS

0 10 2015 25 30

Fig. 3 Typical On-Resistance

vs. Drain Current and Gate Voltage

I , DRAIN-SOURCE CURRENT (A)

D

5

0.05

R

, DRAIN-SOURC

E ON-RESISTAN

CE ( )

DS(ON)

Ω

0

0.04

0.01

0.02

0.03

V = 4.5V

GS

V = 10V

GS

0 5 10 15 20 25 30

I , DRAIN CURRENT (A)

D

Fig. 4 Typical On-Resistance

vs. Drain Current and Temperature

0

0.01

0.02

0.04

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON)

Ω

0.03

T = 85°C

A

T = 25°C

A

T = -55°C

A

T = 150°C

A

V = 4.5V

GS

T = 125°C

A

Fig. 5 On-Resistance Variation with Temperature

-50 -25 0

25 50 75 100 125 150

T , AMBIENT TEMPERATURE (°C)

A

R , DRAIN-SO

URCE

ON

-RESIST

ANCE (

NORMALI

ZED)

DSON

0.6

0.8

1.0

1.2

1.4

1.6

V = 4.5V

I = 10A

GS

D

V = 10V

I = 20A

GS

D

Fig. 6 On-Resistance Variation with Temperature

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERATURE (°C)

A

0

0.01

0.03

R , DRAIN-SOURCE ON-RESISTANCE ( )

DSO

N

ΩR , DRAIN-SOURCE ON-RESISTANCE ( )

DSO

N

Ω

0.02

V = 4.5V

I = 10A

GS

D

V = 10V

I = 20A

GS

D

DMS3019SSD

Document number: DS35053 Rev. 3 - 3

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DMS3019SSD

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERATURE (°C)

A

0

0.5

1.0

1.5

2.0

2.5

3.0

V , GATE THRESHOLD VOLTAGE (V)

GS(TH)

I = 100mA

D

0

4

8

12

16

20

0 0.4 0.6 0.8 1.0 1.2

Fig. 8 Diode Forward Voltage vs. Current

V , SOURCE-DRAIN VOLTAGE (V)

SD

0.2

I , SOURCE CURRENT (A)

S

T = 25°C

A

0 5 10 15 20 25 30

Fig. 9 Typical Total Capacitance

V , DRAIN-SOURCE VOLTAGE (V)

DS

10

1,000

10,000

C, CAP

ACITANC

E (pF)

100

C

iss

C

rss

C

oss

f = 1MHz

0 10 20 30

Fig. 10 Typical Leakage Current

vs. Drain-Source Voltage

V , DRAIN-SOURCE VOLTAGE (V)

DS

1

10

100

1,000

10,000

I ,

LE

AK

A

GE

C

U

RR

EN

T

(

µ

A)

DS

S

T = 25°C

A

T = 85°C

A

T = 125°C

A

0 5 10 15 20

25 30 35 40 45

Fig. 11 Gate-Charge Characteristics

Q , TOTAL GATE CHARGE (nC)

g

0

2

4

6

8

10

V , GATE-

SOURCE VOLTAGE (V)

GS

V = 15V

I = 12.7A

DS

D

DMS3019SSD

Document number: DS35053 Rev. 3 - 3

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August 2018

DMS3019SSD

Electrical Characteristics – Q2 @ T

A

= 25°C unless otherwise stated

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BV

DSS

30

—

V

GS

= 0V, I

D

= 250μA

Zero Gate Voltage Drain Current

I

DSS

—

1.0

μA

V

DS

= 30V, V

GS

= 0V

Gate-Source Leakage

I

GSS

—

±100

nA

V

GS

= ±20V, V

DS

= 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

V

GS(th)

1.0

—

2.4

V

DS

= V

GS

, I

D

= 250μA

Static Drain-Source On-Resistance

R

DS (ON)

—

15

25

23

33

mΩ

V

GS

= 10V, I

D

= 10A

V

GS

= 4.5V, I

D

= 7.5A

Forward Transfer Admittance

|Y

fs

|

—

2.5

—

S

V

DS

= 5V, I

D

= 10A

Diode Forward Voltage

V

SD

—

0.65

1.0

V

GS

= 0V, I

S

= 1A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

C

iss

—

478.9

—

pF

V

DS

= 15V, V

GS

= 0V,

f = 1.0MHz

Output Capacitance

C

oss

—

96.7

—

Reverse Transfer Capacitance

C

rss

—

61.4

—

Gate Resistance

R

g

0.4

1.1

1.6

Ω

V

DS

= 0V, V

GS

= 0V, f = 1MHz

Total Gate Charge (V

GS

= 4.5V)

Q

g

—

5.0

—

nC

V

DS

= 15V, V

GS

= 4.5V, I

D

= 10A

Total Gate Charge (V

GS

= 10V)

Q

g

—

10.5

—

V

DS

= 15V, V

GS

= 10V, I

D

= 10A

Gate-Source Charge

Q

gs

—

1.8

—

Gate-Drain Charge

Q

gd

—

1.6

—

Turn-On Delay Time

t

D(on)

—

2.9

—

ns

V

GS

= 10V, V

DS

= 15V,

R

G

= 3Ω, R

L

= 1.5Ω

Turn-On Rise Time

t

r

—

7.9

—

Turn-Off Delay Time

t

D(off)

—

14.6

—

Turn-Off Fall Time

t

f

—

3.1

—

Notes: 8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to production testing.

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5

Fig. 12 Typical Output Characteristic

V , DRAIN-SOURCE VOLTAGE (V)

DS

0

10

15

20

25

30

I , DRAIN CURRENT (A)

D

5

V = 2.5V

GS

V = 3.0V

GS

V = 3.5V

GS

V = 4.5V

GS

V = 4.0V

GS

V = 10V

GS

0

5

10

15

20

0 0.5 1 1.5 2 2.5 3 3.5 4

Fig. 13 Typical Transfer Characteristic

V , GATE-SOURCE VOLTAGE (V)

GS

I

, D

RAI

N C

URRE

NT

(A)

D

V = 85°C

GS

V = 125°C

GS

V = 25°C

GS

V = -55°C

GS

V = 150°C

GS

V = 5V

DS

DMS3019SSD

Document number: DS35053 Rev. 3 - 3

6 of 10

www.diodes.com

August 2018

DMS3019SSD-13

DMS3019SSD-13

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