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PBSS5240X
40 V, 2 A PNP low VCEsat (BISS) transistor
19 October 2012 Product data sheet
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1. Product profile
1.1 General description
PNP low V
CEsat
Breakthrough In Small Signal (BISS) transistor in a medium power and
flat lead SOT89 Surface-Mounted Device (SMD) plastic package. NPN complement:
PBSS4240X.
1.2 Features and benefits
Low collector-emitter saturation voltage V
CEsat
High collector current capability I
C
and I
CM
High efficiency due to less heat generation
1.3 Applications
DC-to-DC conversion
Supply line switching
Battery charger
LCD backlighting
Driver in low supply voltage applications (e.g. lamps and LEDs)
Inductive load driver (e.g. relays, buzzers and motors)
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
CEO
collector-emitter
voltage
open base - - -40 V
I
C
collector current - - -2 A
I
CM
peak collector current - - -3 A
R
CEsat
collector-emitter
saturation resistance
I
C
= -1 A; I
B
= -100 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
- - 310
I
CRM
repetitive peak
collector current
t
p
≤ 20 ms; δ ≤ 0.33 ; pulsed - - -2.5 A
NXP Semiconductors
PBSS5240X
40 V, 2 A PNP low VCEsat (BISS) transistor
PBSS5240X All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 19 October 2012 2 / 12
2. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 E emitter
2 C collector
3 B base
3 2 1
SOT89
sym132
E
C
B
3. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PBSS5240X SOT89 plastic surface-mounted package; die pad for good heat transfer;
3 leads
SOT89
4. Marking
Table 4. Marking codes
Type number Marking code
PBSS5240X S48
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - -40 V
V
CEO
collector-emitter voltage open base - -40 V
V
EBO
emitter-base voltage open collector - -5 V
I
C
collector current - -2 A
I
CRM
repetitive peak collector current δ ≤ 0.33 ; t
p
≤ 20 ms; pulsed - -2.5 A
I
CM
peak collector current - -3 A
I
B
base current - -300 mA
I
BM
peak base current - -1 A
[1] - 0.5 WP
tot
total power dissipation
[2] - 0.95 W

PBSS5240XX

Mfr. #:
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT PBSS5240X/MPT3/REEL 7" Q1/T1 *
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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