NXP Semiconductors
PBSS5240X
40 V, 2 A PNP low VCEsat (BISS) transistor
PBSS5240X All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved
Product data sheet 19 October 2012 3 / 12
Symbol Parameter Conditions Min Max Unit
[3] - 1.35 W
T
j
junction temperature - 150 °C
T
amb
ambient temperature -65 150 °C
T
stg
storage temperature -65 150 °C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
T
amb
(°C)
-75 17512525 75-25
006aac675
0.5
1.0
1.5
P
tot
(W)
0.0
(1)
(2)
(3)
(1) FR4 PCB, mounting pad for collector 6 cm
2
(2) FR4 PCB, mounting pad for collector 1 cm
2
(3) FR4 PCB, standard footprint
Fig. 1. Power derating curves
6. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
[1] - - 250 K/W
[2] - - 132 K/W
R
th(j-a)
thermal resistance
from junction to
ambient
in free air
[3] - - 93 K/W
R
th(j-sp)
thermal resistance
from junction to solder
point
- - 16 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
