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PBSS5240XX
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
NXP Semiconductors
PBSS5240X
40 V
, 2 A PNP low VCEsat (BISS) transistor
PBSS5240X
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
19 October 2012
6 / 12
Symbol
Parameter
Conditions
Min
T
yp
Max
Unit
V
BEsat
base-emitter saturation
voltage
I
C
= -1 A; I
B
= -100 mA; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
-
-
-1.2
V
V
BEon
base-emitter turn-on
voltage
V
CE
= -5 V; I
C
= -1 A; pulsed;
t
p
≤ 300 µs; δ ≤ 0.02 ; T
amb
= 25 °C
-
-
-1.1
V
f
T
transition frequency
V
CE
= -10 V; I
C
= -50 mA; f = 100 MHz;
T
amb
= 25 °C
150
-
-
MHz
C
c
collector capacitance
V
CB
= -10 V; I
E
= 0 A; i
e
= 0 A;
f = 1 MHz; T
amb
= 25 °C
-
-
12
pF
006aaa794
400
200
600
800
h
FE
0
I
C
(mA)
-
1
-
1
0
4
-
10
3
-
10
-
10
2
(1)
(2)
(3)
V
CE
= -5 V
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 5.
DC current gain as a function of collector
current; typical values
V
CE
(V)
0
-
5
-
4
-
2
- 3
-
1
006aaa799
-
0
.8
-
1
.6
-
2
.4
I
C
(A)
0
IB (mA) = -
24
-
2
1.6
-
1
9.2
-
1
6.8
-
1
4.4
-
9
.6
-
7
.2
-
4
.8
-
2
.4
-
1
2
T
amb
= 25 °C
Fig. 6.
Collector current as a function of collector-
emitter voltage; typical values
NXP Semiconductors
PBSS5240X
40 V
, 2 A PNP low VCEsat (BISS) transistor
PBSS5240X
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
19 October 2012
7 / 12
006aaa795
-
0
.6
-
0
.4
-
0
.8
-
1
.0
V
BE
(V)
-
0
.2
I
C
(mA)
-
1
0
- 1
-
1
0
4
-
1
0
3
-
1
-
10
2
-
1
0
(1)
(2)
(3)
V
CE
= -5 V
(1) T
amb
= −55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
Fig. 7.
Base-emitter voltage as a function of collector
current; typical values
006aaa798
-
0
.6
-
0
.8
-
0
.4
-
1
.0
-
1
.2
V
BEsat
(V)
-
0
.2
I
C
(mA)
-
1
0
- 1
-
1
0
4
-
1
0
3
-
1
-
10
2
-
1
0
(1)
(2)
(3)
I
C
/I
B
= 20
(1) T
amb
= -55 °C
(2) T
amb
= 25 °C
(3) T
amb
= 150 °C
Fig. 8.
Base-emitter saturation voltage as a function of
collector current; typical values
006aaa796
I
C
(mA)
-
1
0
- 1
-
1
0
4
-
1
0
3
-
1
-
10
2
-
1
0
-
1
0
- 1
-
1
V
CEsat
(V)
-
1
0
- 2
(1)
(2)
(3)
I
C
/I
B
= 20
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= −55 °C
Fig. 9.
Collector-emitter saturation voltage as a function of collector current; typical values
NXP Semiconductors
PBSS5240X
40 V
, 2 A PNP low VCEsat (BISS) transistor
PBSS5240X
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
19 October 2012
8 / 12
8.
Package outline
06-08-29
Dimensions in mm
4.6
4.4
1.8
1.4
1.6
1.4
1.2
0.8
3
1.5
0.48
0.35
0.44
0.23
0.53
0.40
2.6
2.4
4.25
3.75
1
2
3
Fig. 10.
Package outline SOT89
9.
Soldering
solder lands
solder resist
occupied area
solder paste
sot089_fr
1.2
1.9
2
2.25
4.75
1
(3×)
0.7
(3×)
0.6
(3×)
1.1
(2×)
1.2
0.85
0.2
0.5
1.7
4.85
3.95
4.6
1.5
1.5
Dimensions in mm
Fig. 1
1.
Reflow soldering footprint for SOT89
P1-P3
P4-P6
P7-P9
P10-P12
P13-P13
PBSS5240XX
Mfr. #:
Buy PBSS5240XX
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT PBSS5240X/MPT3/REEL 7" Q1/T1 *
Lifecycle:
New from this manufacturer.
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