© Semiconductor Components Industries, LLC, 2014
July, 2014 − Rev. 12
1 Publication Order Number:
MC14511B/D
MC14511B
BCD-to-Seven Segment
Latch/Decoder/Driver
The MC14511B BCD−to−seven segment latch/decoder/driver is
constructed with complementary MOS (CMOS) enhancement mode
devices and NPN bipolar output drivers in a single monolithic structure.
The circuit provides the functions of a 4−bit storage latch, an 8421
BCD−to−seven segment decoder, and an output drive capability. Lamp
test (LT
), blanking (BI), and latch enable (LE) inputs are used to test the
display, to turn−off or pulse modulate the brightness of the display, and
to store a BCD code, respectively. It can be used with seven−segment
light−emitting diodes (LED), incandescent, fluorescent, gas discharge,
or liquid crystal readouts either directly or indirectly.
Applications include instrument (e.g., counter, DVM, etc.) display
driver, computer/calculator display driver, cockpit display driver, and
various clock, watch, and timer uses.
Features
• Low Logic Circuit Power Dissipation
• High−Current Sourcing Outputs (Up to 25 mA)
• Latch Storage of Code
• Blanking Input
• Lamp Test Provision
• Readout Blanking on all Illegal Input Combinations
• Lamp Intensity Modulation Capability
• Time Share (Multiplexing) Facility
• Supply Voltage Range = 3.0 V to 18 V
• Capable of Driving Two Low−power TTL Loads, One Low−power
Schottky TTL Load, or Two HTL Loads Over the Rated Temperature
Range
• Chip Complexity: 216 FETs or 54 Equivalent Gates
• Triple Diode Protection on all Inputs
• NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (Voltages Referenced to V
SS
) (Note 1)
Symbol
Parameter Value Unit
V
DD
DC Supply Voltage Range −0.5 to +18.0 V
V
in
Input Voltage Range, All Inputs −0.5 to V
DD
+ 0.5 V
I DC Current Drain per Input Pin 10 mA
P
D
Power Dissipation, per Package (Note 2) 500 mW
T
A
Operating Temperature Range −55 to +125 °C
T
stg
Storage Temperature Range −65 to +150 °C
I
OHmax
Maximum Output Drive Current (Source) per Output 25 mA
P
OHmax
Maximum Continuous Output Power (Source) per Output (Note 3) 50 mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Maximum Ratings are those values beyond which damage to the device may occur.
2. Temperature Derating: “D/DW” Packages: –7.0 mW/°C From 65°C to 125°C
3. P
OHmax
= I
OH
(V
DD
− V
OH
)
MARKING DIAGRAMS
SO−16 WB
DW SUFFIX
CASE 751G
1
16
14511B
AWLYYWWG
SOEIAJ−16
F SUFFIX
CASE 966
1
16
MC14511B
ALYWG
SOIC−16
D SUFFIX
CASE 751B
1
16
14511BG
AWLYWW
A = Assembly Location
WL, L = Wafer Lot
YY, Y = Year
WW, W = Work Week
G = Pb−Free Package
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
SOIC−16 SOEIAJ−16
SO−16 WB
