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BUH100G

P1-P3P4-P6P7-P9P10-P10
© Semiconductor Components Industries, LLC, 2011
October, 2011 − Rev. 6
1 Publication Order Number:
BUH100/D
BUH100G
SWITCHMODE NPN Silicon
Planar Power Transistor
The BUH100G has an application specific state−of−art die designed
for use in 100 W Halogen electronic transformers.
This power transistor is specifically designed to sustain the large
inrush current during either the startup conditions or under a short
circuit across the load.
Features
• Improved Efficiency Due to the Low Base Drive Requirements:
High and Flat DC Current Gain h
FE
Fast Switching
• Robustness Due to the Technology Developed to Manufacture
this Device
• ON Semiconductor Six Sigma Philosophy Provides Tight and
Reproducible Parametric Distributions
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Sustaining Voltage V
CEO
400 Vdc
Collector−Base Breakdown Voltage V
CBO
700 Vdc
Collector−Emitter Breakdown Voltage V
CES
700 Vdc
Emitter−Base Voltage V
EBO
10 Vdc
Collector Current − Continuous
− Peak (Note 1)
I
C
I
CM
10
20
Adc
Base Current − Continuous
− Peak (Note 1)
I
B
I
BM
4
10
Adc
Total Device Dissipation @ T
C
= 25_C
Derate above 25°C
P
D
100
0.8
W
W/_C
Operating and Storage Temperature T
J
, T
stg
−60 to 150
_C
THERMAL CHARACTERISTICS
Characteristics Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
1.25
_C/W
Thermal Resistance, Junction−to−Ambient
R
q
JA
62.5
_C/W
Maximum Lead Temperature for Soldering
Purposes1/8″ from Case for 5 Seconds
T
L
260
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
POWER TRANSISTORS
10 AMPERES
700 VOLTS − 100 WATTS
TO−220AB
CASE 221A−09
STYLE 1
1
http://onsemi.com
MARKING DIAGRAM
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
2
3
Device Package Shipping
ORDERING INFORMATION
BUH100G TO−220AB
(Pb−Free)
50 Units / Rail
BUH100G
AY WW
BUH100G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(I
C
= 100 mA, L = 25 mH)
V
CEO(sus)
400 460 Vdc
Collector−Base Breakdown Voltage
(I
CBO
= 1 mA)
V
CBO
700 860 Vdc
Emitter−Base Breakdown Voltage
(I
EBO
= 1 mA)
V
EBO
10 12.5 Vdc
Collector Cutoff Current
(V
CE
= Rated V
CEO
, I
B
= 0)
I
CEO
100
mAdc
Collector Cutoff Current
(V
CE
= Rated V
CES
, V
EB
= 0)
@ T
C
= 25°C
@ T
C
= 125°C
I
CES
100
1000
mAdc
Collector Base Current
(V
CB
= Rated V
CBO
, V
EB
= 0)
@ T
C
= 25°C
@ T
C
= 125°C
I
CBO
100
1000
mAdc
Emitter−Cutoff Current
(V
EB
= 9 Vdc, I
C
= 0)
I
EBO
100
mAdc
ON CHARACTERISTICS
Base−Emitter Saturation Voltage
(I
C
= 5 Adc, I
B
= 1 Adc)
@ T
C
= 25°C V
BE(sat)
1 1.1 Vdc
Collector−Emitter Saturation Voltage
(I
C
= 5 Adc, I
B
= 1 Adc)
@ T
C
= 25°C
@ T
C
= 125°C
V
CE(sat)
0.37
0.37
0.6
0.6
Vdc
(I
C
= 7 Adc, I
B
= 1.5 Adc) @ T
C
= 25°C
@ T
C
= 125°C
0.5
0.6
0.75
1.5
Vdc
DC Current Gain(I
C
= 1 Adc, V
CE
= 5 Vdc) @ T
C
= 25°C
@ T
C
= 125°C
h
FE
15
16
24
28
(I
C
= 5 Adc, V
CE
= 5 Vdc) @ T
C
= 25°C
@ T
C
= 125°C
10
10
15
14.5
(I
C
= 7 Adc, V
CE
= 5 Vdc) @ T
C
= 25°C
@ T
C
= 125°C
8
7
12
10.5
(I
C
= 10 Adc, V
CE
= 5 Vdc) @ T
C
= 25°C
@ T
C
= 125°C
6
4
9.5
8
DYNAMIC SATURATION VOLTAGE
Dynamic Saturation
Voltage: Determined 3 m s
after rising I
B1
reaches
90% of final I
B1
(See Figure 19)
I
C
= 5 Adc, I
B1
= 1 Adc
V
CC
= 300 V
@ T
C
= 25°C
V
CE(dsat)
1.1 V
@ T
C
= 125°C 2.1 V
I
C
= 7.5 Adc, I
B1
= 1.5 Adc
V
CC
= 300 V
@ T
C
= 25°C 1.7 V
@ T
C
= 125°C 5 V
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth
(I
C
= 1 Adc, V
CE
= 10 Vdc, f = 1 MHz)
f
T
23 MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1 MHz)
C
ob
100 150 pF
Input Capacitance
(V
EB
= 8 Vdc, f = 1 MHz)
C
ib
1300 1750 pF
BUH100G
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
SWITCHING CHARACTERISTICS: Resistive Load (D.C. ≤ 10%, Pulse Width = 40 ms)
Turn−on Time
I
C
= 1 Adc, I
B1
= 0.2 Adc
I
B2
= 0.2 Adc
V
CC
= 300 Vdc
@ T
C
= 25°C
@ T
C
= 125°C
t
on
130
140
200 ns
Turn−off Time @ T
C
= 25°C
@ T
C
= 125°C
t
off
6.8
8.5
8
ms
Turn−on Time
I
C
= 1 Adc, I
B1
= 0.2 Adc
I
B2
= 0.4 Adc
V
CC
= 300 Vdc
@ T
C
= 25°C
@ T
C
= 125°C
t
on
140
150
200 ns
Turn−off Time @ T
C
= 25°C
@ T
C
= 125°C
t
off
3.4
4.3
4
ms
Turn−on Time
I
C
= 5 Adc, I
B1
= 1 Adc
I
B2
= 1 Adc
V
CC
= 300 Vdc
@ T
C
= 25°C
@ T
C
= 125°C
t
on
250
800
500 ns
Turn−off Time @ T
C
= 25°C
@ T
C
= 125°C
t
off
2.9
3.6
3.5
ms
Turn−on Time
I
C
= 7.5 Adc, I
B1
= 1.5 Adc
I
B2
= 1.5 Adc
V
CC
= 300 Vdc
@ T
C
= 25°C
@ T
C
= 125°C
t
on
500
900
700 ns
Turn−off Time @ T
C
= 25°C
@ T
C
= 125°C
t
off
2.1
2.5
2.5
ms
SWITCHING CHARACTERISTICS: Inductive Load (V
clamp
= 300 V, V
CC
= 15 V, L = 200 mH)
Fall Time
I
C
= 1 Adc
I
B1
= 0.2 Adc
I
B2
= 0.2 Adc
@ T
C
= 25°C
@ T
C
= 125°C
t
fi
150
180
250 ns
Storage Time @ T
C
= 25°C
@ T
C
= 125°C
t
si
5.1
5.8
6
ms
Crossover Time @ T
C
= 25°C
@ T
C
= 125°C
t
c
230
300
325 ns
Fall Time
I
C
= 1 Adc
I
B1
= 0.2 Adc
I
B2
= 0.5 Adc
@ T
C
= 25°C
@ T
C
= 125°C
t
fi
150
170
250 ns
Storage Time @ T
C
= 25°C
@ T
C
= 125°C
t
si
2.5
2.8
3
ms
Crossover Time @ T
C
= 25°C
@ T
C
= 125°C
t
c
260
300
350 ns
Fall Time
I
C
= 5 Adc
I
B1
= 1 Adc
I
B2
= 1 Adc
@ T
C
= 25°C
@ T
C
= 125°C
t
fi
100
140
150 ns
Storage Time @ T
C
= 25°C
@ T
C
= 125°C
t
si
2.9
4.6
3.5
ms
Crossover Time @ T
C
= 25°C
@ T
C
= 125°C
t
c
220
450
300 ns
Fall Time
I
C
= 7.5 Adc
I
B1
= 1.5 Adc
I
B2
= 1.5 Adc
@ T
C
= 25°C
@ T
C
= 125°C
t
fi
100
150
150 ns
Storage Time @ T
C
= 25°C
@ T
C
= 125°C
t
si
2
2.5
2.5
ms
Crossover Time @ T
C
= 25°C
@ T
C
= 125°C
t
c
250
475
350 ns
P1-P3P4-P6P7-P9P10-P10

BUH100G

Mfr. #:
Buy BUH100G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 10A 700V 100W NPN
Lifecycle:
New from this manufacturer.
Delivery:
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