BUH100G
http://onsemi.com
7
TYPICAL SWITCHING CHARACTERISTICS
4
0
1042
h
FE
, FORCED GAIN
8
3
6
T
J
= 125°C
T
J
= 25°C
Figure 16. Inductive Storage Time
2
I
B1
= I
B2
V
CC
= 15 V
V
Z
= 300 V
L
C
= 200 mH
Figure 17. Inductive Fall Time
200
0
103
h
FE
, FORCED GAIN
150
t
fi
, FALL TIME (ns)
100
50
467
T
J
= 125°C
T
J
= 25°C
, STORAGE TIME (t
si
μs)
I
C
= 7.5 A
I
C
= 5 A
589
I
Boff
= I
B2
V
CC
= 15 V
V
Z
= 300 V
L
C
= 200 mH
Figure 18. Inductive Crossover Time, t
c
800
300
100
h
FE
, FORCED GAIN
600
t
c
, CROSSOVER TIME (ns)
700
400
500
200
1034 6 7589
I
B1
= I
B2
V
CC
= 15 V
V
Z
= 300 V
L
C
= 200 mH
T
J
= 125°C
T
J
= 25°C
1
I
C
= 7.5 A
I
C
= 5 A
I
C
= 5 A
I
C
= 7.5 A
Figure 19. Dynamic Saturation Voltage Measurements
TIME
V
CE
0 V
I
B
90% I
B
1 ms
3 ms
dyn 1 ms
dyn 3 ms
Figure 20. Inductive Switching Measurements
10
4
0
820
TIME
6
8
6
2
4
9
7
5
3
1
13 5
7
I
B
I
C
V
clamp
t
si
t
c
t
fi
90% I
C
10% I
C
90% I
B1
10% V
clamp
BUH100G
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8
Table 1. Inductive Load Switching Drive Circuit
V
(BR)CEO(sus)
L = 10 mH
R
B2
=
V
CC
= 20 V
I
C(pk)
= 100 mA
Inductive Switching
L = 200 mH
R
B2
= 0
V
CC
= 15 V
R
B1
selected for
desired I
B1
RBSOA
L = 500 mH
R
B2
= 0
V
CC
= 15 V
R
B1
selected for
desired I
B1
+15 V
1 mF
150 W
3 W
100 W
3 W
MPF930
+10 V
50
W
COMMON
-V
off
500 mF
MPF930
MTP8P10
MUR105
MJE210
MTP12N10
MTP8P10
150 W
3 W
100 mF
I
out
A
R
B1
R
B2
1 mF
I
C
PEAK
V
CE
PEAK
V
CE
I
B
I
B
1
I
B
2
TYPICAL THERMAL RESPONSE
Figure 21. Forward Bias Power Derating
1
0
16010020
T
C
, CASE TEMPERATURE (°C)
0.8
POWER DERATING FACTOR
0.6
0.4
0.2
60 140
SECOND BREAKDOWN
DERATING
40 80 120
THERMAL DERATING
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
V
CE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate. The data of Figure 22 is
based on T
C
= 25°C; T
J(pk)
is variable depending on power
level. Second breakdown pulse limits are valid for duty
cycles to 10% but must be derated when T
C
> 25°C. Second
breakdown limitations do not derate the same as thermal
limitations. Allowable current at the voltages shown on
Figure 22 may be found at any case temperature by using the
appropriate curve on Figure 21.
T
J(pk)
may be calculated from the data in Figure 24. At any
case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations
imposed by second breakdown. For inductive loads, high
voltage and current must be sustained simultaneously during
turnoff with the base to emitter junction reverse biased. The
safe level is specified as a reverse biased safe operating area
(Figure 23). This rating is verified under clamped conditions
so that the device is never subjected to an avalanche mode.
Figure 22. Forward Bias Safe Operating Area
100
0.01
100
0
10
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
100
1
0.1
I
C
,
CO
LLE
C
T
O
R
C
URRENT (AMP
S
)
DC
5 ms
1 ms
10 ms
1 ms
EXTENDED
SOA
10
BUH100G
http://onsemi.com
9
Figure 23. Reverse Bias Safe Operating Area
12
6
0
800200
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
500
I
C
, COLLECTOR CURRENT (AMPS)
8
2
GAIN 5
0 V -1.5 V
-5 V
T
C
125°C
L
C
= 2 mH
300 400 700600
10
4
Figure 24. Typical Thermal Response (Z
q
JC
(t)) for BUH100
1
0.01
100.10.01
t, TIME (ms)
0.1
1 100 1000
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
R
q
JC
(t) = r(t) R
q
JC
R
q
JC
= 1.25°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
R
q
JC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
0.05
SINGLE PULSE
0.5
0.2
0.1
0.02

BUH100G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 10A 700V 100W NPN
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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