BUH100G

P1-P3 P4-P6 P7-P9 P10-P10

BUH100G

http://onsemi.com

4

TYPICAL STATIC CHARACTERISTICS

Figure 1. DC Current Gain @ 1 Volt

100

10

1

1010.10.001

I

C

, COLLECTOR CURRENT (AMPS)

h

FE

, DC CURRENT GAIN

T

J

= 125°C

T

J

= 25°C

T

J

= -20°C

V

CE

= 1 V

Figure 2. DC Current Gain @ 3 Volt

100

10

1

1010.10.001

I

C

, COLLECTOR CURRENT (AMPS)

h

FE

, DC CURRENT GAIN

T

J

= 125°C

T

J

= -20°C

V

CE

= 3 V

0.01 0.01

Figure 3. DC Current Gain @ 5 Volt

100

10

1

10010.10.01

I

C

, COLLECTOR CURRENT (AMPS)

h

FE

, DC CURRENT GAIN

T

J

= 125°C

T

J

= -20°C

V

CE

= 5 V

10

Figure 4. Collector−Emitter Saturation Voltage

10

1

0.01

1010.10.001

I

C

, COLLECTOR CURRENT (AMPS)

T

J

= 125°C

T

J

= 25°C

T

J

= -20°C

I

C

/I

B

= 5

V

CE

, VOLTAGE (VOLTS)

0.1

Figure 5. Collector−Emitter Saturation Voltage

10

1

0.01

1010.10.001

I

C

, COLLECTOR CURRENT (AMPS)

T

J

= 125°C

T

J

= -20°C

I

C

/I

B

= 10

V

CE

, VOLTAGE (VOLTS)

0.1

0.01

Figure 6. Base−Emitter Saturation Region

1.5

1

0

1010.010.001

I

C

, COLLECTOR CURRENT (AMPS)

V

BE

, VOLTAGE (VOLTS)

T

J

= 125°C

T

J

= 25°C

T

J

= -20°C

I

C

/I

B

= 5

0.5

0.1

0.01

T

J

= 25°C

T

J

= 25°C

T

J

= 25°C

BUH100G

http://onsemi.com

5

TYPICAL STATIC CHARACTERISTICS

Figure 7. Base−Emitter Saturation Region

1.5

0.5

0

1010.10.001

I

C

, COLLECTOR CURRENT (AMPS)

V

BE

, VOLTAGE (VOLTS)

T

J

= 125°C

T

J

= 25°C

T

J

= -20°C

1

0.01

I

C

/I

B

= 10

Figure 8. Collector Saturation Region

2

1

0

1010.10.01

I

B

, BASE CURRENT (A)

V

CE(sat)

(I

C

= 1 A)

V

CE

, VOLTAGE (VOLTS)

T

J

= 25°C

2 A

5 A

3 A

1.5

0.5

8 A

10 A

15 A

Figure 9. Capacitance

10000

10

100101

V

R

, REVERSE VOLTAGE (VOLTS)

C, CAPACITANCE (pF)

100

C

ib

T

J

= 25°C

f

(test)

= 1 MHz

1000

C

ob

Figure 10. Resistive Breakdown

900

700

400

10000010010

R

BE

(W)

BVCER (VOLTS)

T

J

= 25°C

BVCER @ 10 mA

800

600

500

BVCER(sus) @ 500 mA, 25 mH

100001000

BUH100G

http://onsemi.com

6

t, TIME (s)μ

TYPICAL SWITCHING CHARACTERISTICS

Figure 11. Resistive Switching Time, t

on

2500

1000

0

1020

I

C

, COLLECTOR CURRENT (AMPS)

4

t, TIME (ns)

1500

500

T

J

= 125°C

T

J

= 25°C

I

B1

= I

B2

V

CC

= 300 V

PW = 40 ms

Figure 12. Resistive Switch Time, t

off

10

6

0

1060

I

C

, COLLECTOR CURRENT (AMPS)

Figure 13. Inductive Storage Time, t

si

7

1

1041

I

C

, COLLECTOR CURRENT (AMPS)

5

3

8

4

2

7

T

J

= 125°C

T

J

= 25°C

I

B1

= I

B2

V

CC

= 15 V

V

Z

= 300 V

L

C

= 200 mH

2000

I

C

/I

B

= 5

Figure 14. Inductive Storage Time,

t

c

& t

fi

@ I

C

/I

B

= 5

600

0

1071

I

C

, COLLECTOR CURRENT (AMPS)

t, TIME (ns)

200

4

T

J

= 125°C

T

J

= 25°C

t

c

t

fi

400

68

I

C

/I

B

= 10

I

C

/I

B

= 5

125°C

25°C

24 8

T

J

= 125°C

T

J

= 25°C

I

B1

= I

B2

V

CC

= 300 V

PW = 20 ms

I

C

/I

B

= 10

I

C

/I

B

= 5

t, TIME (s)μ

Figure 13 Bis. Inductive Storage Time, t

si

6

0

1041

I

C

, COLLECTOR CURRENT (AMPS)

5

2

7

T

J

= 125°C

T

J

= 25°C

I

B1

= I

B2

V

CC

= 15 V

V

Z

= 300 V

L

C

= 200 mH

t, TIME (s)μ

4

3

1

I

C

/I

B

= 10

I

B1

= I

B2

V

CC

= 15 V

V

Z

= 300 V

L

C

= 200 mH

Figure 15. Inductive Storage Time,

t

c

& t

fi

@ I

C

/I

B

= 10

800

0

1071

I

C

, COLLECTOR CURRENT (AMPS)

t, TIME (ns)

200

4

T

J

= 125°C

T

J

= 25°C

t

c

t

fi

400

I

B1

= I

B2

V

CC

= 15 V

V

Z

= 300 V

L

C

= 200 mH

600

P1-P3 P4-P6 P7-P9 P10-P10

BUH100G

Mfr. #:

Manufacturer:

ON Semiconductor

Description:

Bipolar Transistors - BJT 10A 700V 100W NPN

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

T/T Paypal Visa MoneyGram Western Union

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