Vishay Siliconix
SiA921EDJ
Document Number: 64734
S12-2731-Rev. C, 12-Nov-12
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact:: pmostechsupport@vishay.com
Dual P-Channel 20 V (D-S) MOSFET
FEATURES
• TrenchFET
®
Power MOSFET
• Thermally Enhanced PowerPAK
®
SC-70
Package
- Small Footprint Area
- Low On-Resistance
• Typical ESD Protection: 1700 V
• High Speed Switching
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Load Switch, PA Switch and Battery Switch for Portable
Devices
• DC/DC Converters
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/doc?73257
). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 110 °C/W.
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
()I
D
(A) Q
g
(Typ.)
- 20
0.059 at V
GS
= - 4.5 V
- 4.5
a
4.9 nC
0.098 at V
GS
= - 2.5 V
- 4.5
a
S
1
D
1
G
2
S
2
G
1
D
2
1
6
5
4
2
3
2.05 mm
2.05 mm
PowerPAK SC-70-6 Dual
D
1
D
2
Ordering Information:
SiA921EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
SiA921EDJ-T4-GE3 (Lead (Pb)-free and Halogen-free)
Marking Code
X X X
D F X
Lot Traceability
and Date code
Part # code
P-Channel MOSFET
S
2
D
2
G
2
P-Channel MOSFET
S
1
D
1
G
1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C, unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
- 20
V
Gate-Source Voltage
V
GS
± 12
Continuous Drain Current (T
J
= 150 °C)
T
C
= 25 °C
I
D
- 4.5
a
A
T
C
= 70 °C
- 4.5
a
T
A
= 25 °C
- 4.5
a, b, c
T
A
= 70 °C
- 3.7
b, c
Pulsed Drain Current
I
DM
- 15
Continuous Source-Drain Diode Current
T
C
= 25 °C
I
S
- 4.5
a
T
A
= 25 °C
- 1.6
b, c
Maximum Power Dissipation
T
C
= 25 °C
P
D
7.8
W
T
C
= 70 °C
5
T
A
= 25 °C
1.9
b, c
T
A
= 70 °C
1.2
b, c
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)
d, e
260
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
b, f
t 5 s
R
thJA
52 65
°C/W
Maximum Junction-to-Case (Drain) Steady State
R
thJC
12.5 16