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SIA921EDJ-T1-GE3

P1-P3P4-P6P7-P9
www.vishay.com
4
Document Number: 64734
S12-2731-Rev. C, 12-Nov-12
Vishay Siliconix
SiA921EDJ
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact:: pmostechsupport@vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Gate Charge
Source-Drain Diode Forward Voltage
Threshold Voltage
0
2
4
6
8
10
0 3 6 9 12 15
I
D
=4.6A
V
DS
=16V
V
DS
=10V
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
0.0 0.2 0.4 0.6 0.8 1.0 1.2
10
1
100
T
J
= 25 °C
T
J
= 150 °C
V
SD
-Source-to-Drain Voltage (V)
- Source Current (A)I
S
0.4
0.5
0.6
0.7
0.8
0.9
1.0
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
(V)V
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
- 50 - 25 0 25 50 75 100 125 150
I
D
=3.6A
V
GS
=4.5V
V
GS
= 2.5 V
T
J
-Junction Temperature (°C)
(Normalized)
- On-Resistance
R
DS(on)
0.00
0.05
0.10
0.15
0.20
012345
I
D
= 1 A; T
J
= 25 °C
I
D
= 1 A; T
J
= 125 °C
I
D
=3.6A;T
J
= 25 °C
I
D
=3.6A;T
J
= 125 °C
- On-Resistance (Ω)
R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
1000
100
1
0.001 0.01 0.1 10
Power (W)
Pulse (s)
20
10
5
15
0
Vishay Siliconix
SiA921EDJ
Document Number: 64734
S12-2731-Rev. C, 12-Nov-12
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact:: pmostechsupport@vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Safe Operating Area, Junction-to-Ambient
Current Derating*
0
2
4
6
8
10
12
0 255075100125150
Package Limited
T
C
- Case Temperature (°C)
I
D
- Drain Current (A)
Power Derating
0
2
4
6
8
25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power Dissipation (W)
www.vishay.com
6
Document Number: 64734
S12-2731-Rev. C, 12-Nov-12
Vishay Siliconix
SiA921EDJ
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact:: pmostechsupport@vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?64734
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
0.1
0.01
Normalized Ef fective T ransient
Thermal Impedance
10
-3
10
-2
1 10 1000 10
-1
10
-4
100
Square Wave Pulse Duration (s)
Single Pulse
0.02
0.05
0.1
0.2
Duty Cycle = 0.5
1. Duty Cycle, D =
2. Per Unit Base = R
th JA
= 85 °C/W
3. T
JM
- T
A
= P
DM
Z
th JA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Normalized Thermal Transient Impedance, Junction-to-Case
10
-3
10
-2
10
-1
10
-4
1
0.01
Square Wave Pulse Duration (s)
Normalized Ef fective T ransient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
Single Pulse
0.02
0.05
P1-P3P4-P6P7-P9

SIA921EDJ-T1-GE3

Mfr. #:
Buy SIA921EDJ-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -20V Vds 12V Vgs PowerPAK SC-70
Lifecycle:
New from this manufacturer.
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