SD453N16S30PC

VS-SD453N/R Series
www.vishay.com
Vishay Semiconductors
Revision: 21-Jan-14
1
Document Number: 93176
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fast Recovery Diodes
(Stud Version), 400 A, 450 A
FEATURES
High power fast recovery diode series
2.0 μs to 3.0 μs recovery time
High voltage ratings up to 2500 V
High current capability
Optimized turn-on and turn-off characteristics
Low forward recovery
Fast and soft reverse recovery
Compression bonded encapsulation
Stud version case style B-8
Maximum junction temperature 150 °C
Designed and qualified for industrial level
Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
Snubber diode for GTO
High voltage freewheeling diode
Fast recovery rectifier applications
ELECTRICAL SPECIFICATIONS
PRODUCT SUMMARY
I
F(AV)
400 A, 450 A
Package B-8
Circuit configuration Single diode
B-8
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS
SD453N/R
UNITS
S20 S30
I
F(AV)
400 450 A
T
C
70 70 °C
I
F(RMS)
630 710
A
I
FSM
50 Hz 9300 9600
60 Hz 9730 10 050
V
RRM
Range 1200 to 2500 1200 to 2500 V
t
rr
2.0 3.0 μs
T
J
25 25
°C
T
J
- 40 to 150 - 40 to 150
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
V
RRM
, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
I
RRM
MAXIMUM
AT T
J
= T
J
MAXIMUM
mA
VS-SD453N/R
12 1200 1300
50
16 1600 1700
20 2000 2100
25 2500 2600
VS-SD453N/R Series
www.vishay.com
Vishay Semiconductors
Revision: 21-Jan-14
2
Document Number: 93176
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS
SD453N/R
UNITS
S20 S30
Maximum average forward current
at case temperature
I
F(AV)
180° conduction, half sine wave
400 450 A
70 70 °C
Maximum RMS forward current at
case temperature
I
F(RMS)
630 710 A
55 52 °C
Maximum peak, one-cycle forward,
non-repetitive surge current
I
FSM
t = 10 ms
No voltage
reapplied
Sinusoidal half wave,
initial T
J
= T
J
maximum
9300 9600
A
t = 8.3 ms 9730 10 050
t = 10 ms
100 % V
RRM
reapplied
7820 8070
t = 8.3 ms 8190 8450
Maximum I
2
t for fusing I
2
t
t = 10 ms
No voltage
reapplied
432 460
kA
2
s
t = 8.3 ms 395 420
t = 10 ms
100 % V
RRM
reapplied
306 326
t = 8.3 ms 279 297
Maximum I
2
t for fusing I
2
t t = 0.1 to 10 ms, no voltage reapplied 4320 4600 kA
2
s
Low level value of threshold voltage V
F(TO)1
(16.7 % x x I
F(AV)
< I < x I
F(AV)
),
T
J
= T
J
maximum
1.00 0.95
V
High level value of threshold voltage V
F(TO)2
(I > x I
F(AV)
), T
J
= T
J
maximum 1.09 1.04
Low level value of forward
slope resistance
r
f1
(16.7 % x x I
F(AV)
< I < x I
F(AV)
),
T
J
= T
J
maximum
0.80 0.60
mW
High level value of forward
slope resistance
r
f2
(I > x I
F(AV)
), T
J
= T
J
maximum 0.74 0.54
Maximum forward voltage drop V
FM
I
pk
= 1500 A, T
J
= T
J
maximum,
t
p
= 10 ms sinusoidal wave
2.20 1.85 V
RECOVERY CHARACTERISTICS
CODE
MAXIMUM VALUE
AT T
J
= 25 °C
TEST CONDITIONS
TYPICAL VALUES
AT T
J
= 150 °C
t
rr
AT 25 % I
RRM
(μs)
I
pk
SQUARE
PULSE
(A)
dI/dt
(A/μs)
V
r
(V)
t
rr
AT 25 % I
RRM
(μs)
Q
rr
(μC)
I
rr
(A)
S20 2.0
1000 50 - 50
3.5 250 120
S30 3.0 5.0 380 150
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction operating and storage
temperature range
T
J
, T
Stg
- 40 to 150 °C
Maximum thermal resistance, junction to case R
thJC
DC operation 0.1
K/W
Maximum thermal resistance, case to heatsink R
thCS
Mounting surface, smooth, flat and greased 0.04
Mounting torque ± 10 % Not-lubricated threads 50 Nm
Approximate weight 454 g
Case style See dimensions (link at the end of datasheet) B-8
R
thJC
CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.010 0.008
T
J
= T
J
maximum K/W
120° 0.014 0.014
90° 0.017 0.019
60° 0.025 0.026
30° 0.042 0.042
I
FM
t
rr
dir
dt
I
RM(REC)
Q
rr
t
VS-SD453N/R Series
www.vishay.com
Vishay Semiconductors
Revision: 21-Jan-14
3
Document Number: 93176
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 5 - Forward Power Loss Characteristics
Fig. 6 - Forward Power Loss Characteristics
60
70
80
90
100
110
120
130
140
150
0 50 100 150 200 250 300 350 400 450
30°
60°
90°
120°
180°
Average Forward Current (A)
Conduction Angle
Maximum Allowable Case Temperature C)
SD 4 5 3 N / R. . S2 0 Se r i e s
R (DC) = 0.1 K/ W
thJC
50
60
70
80
90
100
110
120
130
140
150
0 100 200 300 400 500 600 700
30°
60°
90°
180°
DC
120°
Average Forward Current (A)
Conduction Period
Maximum Allowable Case Temperature (°C)
SD 4 5 3 N / R. . S2 0 Se r i e s
R (DC) = 0.1 K/ W
thJC
60
70
80
90
100
110
120
130
140
150
0100200300400500
30°
60°
90°
120°
180°
Average Forward Current (A)
Conduction Angle
Maximum Allowable Case Temperature C)
SD 4 5 3 N / R. . S3 0 Se r i e s
R (DC) = 0.1 K/ W
thJC
40
50
60
70
80
90
100
110
120
130
140
150
0 200 400 600 800
30°
60°
90°
180°
DC
120°
Average Forward Current (A)
Conduction Period
Maximum Allowable Case Temperature (°C)
SD 4 5 3 N / R. . S3 0 Se r i e s
R (DC) = 0.1 K/ W
thJC
0
100
200
300
400
500
600
700
800
0 50 100 150 200 250 300 350 400 450
180°
120°
90°
60°
30°
Average Forward Current (A)
Maximum Average Forward Power Loss (W)
RM S Li m i t
Conduction Angle
SD 4 5 3 N / R. . S2 0 Se r i e s
T = 150°C
J
0
100
200
300
400
500
600
700
800
900
1000
0 100 200 300 400 500 600 700
DC
180°
120°
90°
60°
30°
Average Forward Current (A)
RM S Li m it
Maximum Average Forward Power Loss (W)
Conduction Period
SD 4 5 3 N / R. . S2 0 Se r i e s
T = 150°C
J

SD453N16S30PC

Mfr. #:
Manufacturer:
Vishay
Description:
DIODE GEN PURP 1.6KV 450A B8
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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