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SD453N16S30PC

P1-P3P4-P6P7-P9P10-P11
VS-SD453N/R Series
www.vishay.com
Vishay Semiconductors
Revision: 21-Jan-14
4
Document Number: 93176
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Forward Power Loss Characteristics
Fig. 8 - Forward Power Loss Characteristics
Fig. 9 - Maximum Non-Repetitive Surge Current
Fig. 10 - Maximum Non-Repetitive Surge Current
Fig. 11 - Maximum Non-Repetitive Surge Current
Fig. 12 - Maximum Non-Repetitive Surge Current
0
100
200
300
400
500
600
700
800
0 100 200 300 400 500
180°
120°
90°
60°
30°
Average Forward Current (A)
Maximum Average Forward Power Loss (W)
RM S Li m it
Conduction Angle
SD 4 5 3 N / R. . S3 0 Se r i e s
T = 1 5 0 ° C
J
0
100
200
300
400
500
600
700
800
900
1000
0 100 200 300 400 500 600 700 800
DC
180°
120°
90°
60°
30°
Average Forward Current (A)
RM S Lim it
Maximum Average Forward Power Loss (W)
Conduction Period
SD 4 5 3 N / R. . S3 0 Se r i e s
T = 1 5 0 ° C
J
2000
3000
4000
5000
6000
7000
8000
9000
110100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Pea k Half Sine Wa ve Forwa rd Current (A)
SD453N/ R..S20 Series
Initia l T = 150 °C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
2000
3000
4000
5000
6000
7000
8000
9000
10000
0.01 0.1 1
Pulse Tra in D ura t io n ( s)
Peak Half Sine Wave Forward Current (A)
Maximum Non Repetitive Surge Current
SD453N/ R..S20 Se ries
Versus Pulse Train Dura tion.
Initial T = 150 °C
No Voltage Reapplied
Rated V Reapplied
RRM
J
2000
3000
4000
5000
6000
7000
8000
9000
110100
Number Of Eq ual Amplitud e Half Cycle Current Pulses (N)
Pea k Ha lf Sine Wave Forward Current (A)
Initia l T = 150 °C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
SD 4 5 3 N / R. . S3 0 Se r i e s
At Any Ra ted Load Cond ition And With
Rated V Applied Following Surge.
RRM
2000
3000
4000
5000
6000
7000
8000
9000
10000
0.01 0.1 1
Pulse Train Duration (s)
Pea k Ha lf Sine Wave Forward Current (A)
Maximum Non Repetitive Surge Current
SD453N/ R..S30 Series
Versus Pulse Train Duration.
Initia l T = 150 °C
No Volta g e Reapp lied
Rated V Reapplied
RRM
J
VS-SD453N/R Series
www.vishay.com
Vishay Semiconductors
Revision: 21-Jan-14
5
Document Number: 93176
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 13 - Forward Voltage Drop Characteristics Fig. 14 - Forward Voltage Drop Characteristics
Fig. 15 - Thermal Impedance Z
thJC
Characteristic
Fig. 16 - Typical Forward Recovery Characteristics Fig. 17 - Typical Forward Recovery Characteristics
100
1000
10000
0.5 1 1.5 2 2.5 3 3.5
T = 2 5 ° C
J
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T = 150°C
J
SD453N/ R..S20 Se ries
100
1000
10000
0.5 1 1.5 2 2.5 3 3.5 4
T = 2 5 ° C
J
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T = 150°C
J
SD453N/ R..S30 Series
0.001
0.01
0.1
1
0.001 0.01 0.1 1 10
Sq u a r e W a v e Pu l se D u r a t i o n ( s)
thJC
Transient Thermal Impedance Z (K/W)
Steady State Value:
R = 0.1 K/ W
(DC Operation)
thJC
SD453N/ R..S20/ S30 Se rie s
0
20
40
60
80
100
0 400 800 1200 1600 2000
T = 2 5 ° C
J
Fo rw a rd Rec overy (V)
T = 150°C
J
SD 4 5 3 N / R. . S2 0 Se r i e s
Rate Of Rise Of Forward Current - di/dt (A/us)
I
V
FP
VS-SD453N/R Series
www.vishay.com
Vishay Semiconductors
Revision: 21-Jan-14
6
Document Number: 93176
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 18 - Recovery Time Characteristics
Fig. 19 - Recovery Charge Characteristics
Fig. 20 - Recovery Current Characteristics
Fig. 21 - Recovery Time Characteristics
Fig. 22 - Recovery Charge Characteristics
Fig. 23 - Recovery Current Characteristics
2
2.5
3
3.5
4
4.5
5
5.5
6
10 100 1000
Rate Of Fall Of Forward Current - di/dt (A/µs)
Maximum Reverse Rec overy Time - Trr (µs)
500 A
150 A
I = 1000 A
Si n e P u l s e
FM
SD 4 5 3 N / R. . S2 0 Se r i e s
T = 150 °C; V > 100V
J
r
0
100
200
300
400
500
600
700
800
0 50 100 150 200 250 300
Maximum Reverse Recovery Charge - Qrr (µC)
Rate Of Fall Of Forward Current - di/dt (A/µs)
500 A
150 A
I = 1000 A
Si n e Pu l s e
FM
SD 4 5 3 N / R. . S2 0 Se r i e s
T = 150 °C; V > 100V
J
r
0
50
100
150
200
250
300
350
400
450
0 50 100 150 200 250 300
Maximum Reverse Recovery Current - Irr (A)
500 A
Rate Of Fall Of Forward Current - di/dt (A/µs)
150 A
I = 1000 A
Sine Pulse
FM
SD 4 5 3 N / R. . S2 0 Se r i e s
T = 150 °C; V > 100V
J
r
2
2.5
3
3.5
4
4.5
5
5.5
6
6.5
7
10 100 1000
Rate Of Fall Of Forward Current - di/dt (A/µs)
Maximum Reverse Recovery Time - Trr (µs)
500 A
150 A
I = 1000 A
Si n e Pu l se
FM
SD453N/ R..S30 Series
T = 150 °C, V > 100V
J
r
0
200
400
600
800
1000
1200
0 50 100 150 200 250 300
Maximum Reverse Recovery Charge - Qrr (µC)
Rate Of Fall Of Forward Current - di/dt (A/µs)
500 A
150 A
I = 1000 A
Si n e Pu l se
FM
SD453N/ R..S30 Series
T = 150 °C; V > 100V
r
J
0
50
100
150
200
250
300
350
400
450
500
550
0 50 100 150 200 250 300
Ma xim um Reverse Re c o very Current - Irr (A)
500 A
Rate Of Fall Of Forward Current - di/dt (A/µs)
150 A
I = 1000 A
Si n e Pu l se
FM
SD 4 5 3 N / R. . S3 0 Se r i e s
T = 150 °C; V > 100V
J
r
P1-P3P4-P6P7-P9P10-P11

SD453N16S30PC

Mfr. #:
Buy SD453N16S30PC
Manufacturer:
Vishay
Description:
DIODE GEN PURP 1.6KV 450A B8
Lifecycle:
New from this manufacturer.
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