SD453N16S30PC

VS-SD453N/R Series
www.vishay.com
Vishay Semiconductors
Revision: 21-Jan-14
7
Document Number: 93176
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 24 - Maximum Total Energy Loss
Per Pulse Characteristics
Fig. 25 - Frequency Characteristics
Fig. 26 - Maximum Total Energy Loss
Per Pulse Characteristics
Fig. 27 - Frequency Characteristics
Fig. 28 - Maximum Total Energy Loss
Per Pulse Characteristics
Fig. 29 - Frequency Characteristics
1E2
1E3
1E4
1E1 1E2 1E3 1E4
1
2
Pu lse Ba se w i d t h ( µ s)
Peak Forward Current (A)
10 joule s p er p ulse
6
4
d v/ d t = 1000V/ µs
Sinusoidal Pulse
0.6
0.4
0.2
0.1
SD 4 5 3 N / R. . S2 0 Se r i e s
T = 150°C, V = 800V
J
RRM
tp
1E2
1E3
1E4
1 E1 1 E2 1 E3 1 E4
Pulse Ba se w id t h ( µ s)
50 Hz
200
10000
100
4000
dv/dt = 1000V/us
400
1000
2000
6000
Peak Forward Current (A)
Si n u s o i d a l Pu l se
1500
3000
T = 70°C, V = 800V
C
RRM
SD 4 5 3 N/ R. . S2 0 Se r i e s
tp
600
1E2
1E3
1E4
1E1 1E2 1E3 1E4
1
2
Pulse Ba sew id t h ( µs)
4
10 joules per pulse
6
Trapezoidal Pulse
Peak Forward Current (A)
0.8
0.6
SD 4 5 3 N / R. . S2 0 Se r i e s
T = 150°C, V = 800V
J
RRM
d v/ d t = 1000V/ µs; d i/ d t = 300A/ µs
tp
0.4
1E2
1E3
1E4
1E1 1E2 1E3 1E4
Pu lse Ba se w id t h ( µs)
Tr a p e zo i d a l Pu l se
50 Hz
100200
400
1000
1500
2000
4000
3000
600
6000
Pea k Fo rw a r d C u rr en t ( A )
SD 4 5 3 N/ R. . S2 0 Se r i e s
T = 70°C, V = 800V
dv/dt = 1000V/us,
d i/ d t = 300A/ us
RRM
C
tp
1E2
1E3
1E4
1E1 1E2 1E3 1E4
1
2
Pulse Ba se w id t h ( µs)
4
10 joules per pulse
6
Trapezoidal Pulse
Peak Forward Current (A)
0.6
0.4
SD 4 5 3 N / R. . S2 0 Se r i e s
dv/dt = 1000Vs
d i/ d t = 100A/ µs
T = 1 5 0 ° C , V = 8 0 0 V
J
RRM
tp
0.2
1E2
1E3
1E4
1E1 1E2 1E3 1E4
Pu lse Ba se w id t h ( µ s)
Tr a p e zo i d a l Pu l s e
50 Hz
100
200
400
1000
1500
2000
4000
3000
600
6000
Pe ak Fo rwa rd Current (A)
T = 70°C, V = 800V
dv/dt = 1000V/us,
d i/ d t = 100A/ us
RR M
C
SD453N/ R..S20 Serie s
tp
VS-SD453N/R Series
www.vishay.com
Vishay Semiconductors
Revision: 21-Jan-14
8
Document Number: 93176
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 30 - Maximum Total Energy Loss
Per Pulse Characteristics
Fig. 31 - Frequency Characteristics
Fig. 32 - Maximum Total Energy Loss
Per Pulse Characteristics
Fig. 33 - Frequency Characteristics
Fig. 34 - Maximum Total Energy Loss
Per Pulse Characteristics
Fig. 35 - Frequency Characteristics
1E2
1E3
1E4
1E1 1E2 1E3 1E4
1
2
Pulse Ba se w id t h (µs)
Pe a k Forw a r d C u rre n t ( A)
10 jo ules p er p ulse
6
4
dv/dt = 1000Vs
Sinusoidal Pulse
0.8
0.6
0.4
0.2
SD453N/ R...S30 Series
T = 150°C , V = 800V
J
RR M
tp
0.1
1E2
1E3
1E4
1 E1 1 E2 1 E3 1 E4
Pulse Ba se w id t h ( µs)
50 Hz
200
100
4000
dv/dt = 1000V/us
400
1000
2000
6000
Pe a k Forw a r d C u rre n t ( A)
Si n u so i d a l Pu l se
1500
3000
SD 4 5 3 N / R. . S3 0 Se r i e s
6000
T = 70°C, V = 800V
RRM
C
tp
1E2
1E3
1E4
1E1 1E2 1E3 1E4
1
2
Pulse Ba sew id t h ( µs)
4
10 joules per pulse
6
Trapezoidal Pulse
Peak Forward Current (A)
0.8
SD453N/ R..S30 Series
T = 150°C, V = 800V
J
RRM
0.6
d v/ d t = 1000V/ µs; d i/ d t = 300A/ µs
tp
1E2
1E3
1E4
1 E1 1 E2 1 E3 1 E4
Pulse Ba sew id t h ( µs)
Tr a p e z o i d a l P u l se
50 Hz
100
200
400
1000
2000
4000
3000
600
Pe ak Forwa rd C urrent ( A)
dv/dt = 1000V/us,
di/dt = 300A/us
T = 70°C, V = 800V
SD 4 5 3 N / R. . S3 0 Se r i e s
RRM
tp
1E2
1E3
1E4
1E11E21E31E4
1
2
Pulse Ba sew id t h ( µs)
4
10 joules per pulse
6
Trapezoidal Pulse
Peak Forward Current (A)
SD 4 5 3 N / R. . S3 0 Se r i e s
T = 1 5 0 ° C , V = 8 0 0 V
J
RRM
0.8
0.6
d v/ d t = 1000V/ µs; d i/ d t = 100A/ µs
tp
0.4
1E2
1E3
1E4
1E1 1E2 1E3 1E4
Pulse Ba se w id t h (µs)
Tr a p e zo i d a l Pu l se
50 Hz
100200
400
1000
1500
2000
4000
3000
600
Peak Forward Current (A)
SD 4 5 3 N / R. . S3 0 Series
T = 70°C, V = 800V
dv/dt = 1000V/us,
di/ d t = 100A/ us
C
RRM
tp
VS-SD453N/R Series
www.vishay.com
Vishay Semiconductors
Revision: 21-Jan-14
9
Document Number: 93176
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ORDERING INFORMATION TABLE
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95303
Device code
51
32 4
6 7 8 9 10
SDVS- 45 3 N 25 S30 P S C
2
- Diode
1
- Vishay Semiconductors product
3
- Essential part number
4
- 3 = Fast recovery
5
- N = Stud normal polarity (cathode to stud)
R = Stud reverse polarity (anode to stud)
6
- Voltage code x 100 = V
RRM
(see Voltage Ratings table)
7
-t
rr
code (see Recovery Characteristics table)
8
- P = Stud base B-8 3/4" 16UNF-2A
M = Stud base B-8 M24 x 1.5
9
-7
S = Isolated lead with silicon sleeve
(red = Reverse polarity; blue = Normal polarity)
None = Not isolated lead
T = Threaded top terminal 3/8" 24UNF-2A
10
- C = Ceramic housing

SD453N16S30PC

Mfr. #:
Manufacturer:
Vishay
Description:
DIODE GEN PURP 1.6KV 450A B8
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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