Philips Semiconductors
BUK9528-55A; BUK9628-55A
TrenchMOS™ logic level FET
Product specification Rev. 01 — 18 January 2001 2 of 15
9397 750 07683
© Philips Electronics N.V. 2001. All rights reserved.
5. Quick reference data
6. Limiting values
Table 2: Quick reference data
Symbol Parameter Conditions Typ Max Unit
V
DS
drain-source voltage (DC) − 55 V
I
D
drain current (DC) T
mb
=25°C; V
GS
=5V − 42 A
P
tot
total power dissipation T
mb
=25°C − 99 W
T
j
junction temperature − 175 °C
R
DSon
drain-source on-state resistance V
GS
=5V; I
D
= 15 A; T
j
=25°C2428mΩ
V
GS
= 4.5 V; I
D
= 15 A; T
j
=25°C − 30 mΩ
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage (DC) − 55 V
V
DGR
drain-gate voltage (DC) R
GS
=20kΩ−55 V
V
GS
gate-source voltage (DC) −±10 V
V
GSM
non-repetitive gate-source voltage t
p
≤ 50 µs −±15 V
I
D
drain current (DC) T
mb
=25°C; V
GS
=5V;
Figure 2 and 3
− 42 A
T
mb
= 100 °C; V
GS
=5V;Figure 2 − 30 A
I
DM
peak drain current T
mb
=25°C; pulsed; t
p
≤ 10 µs;
Figure 3
− 168 A
P
tot
total power dissipation T
mb
=25°C; Figure 1 − 99 W
T
stg
storage temperature −55 +175 °C
T
j
operating junction temperature −55 +175 °C
Source-drain diode
I
DR
reverse drain current (DC) T
mb
=25°C − 42 A
I
DRM
pulsed reverse drain current T
mb
=25°C; pulsed; t
p
≤ 10 µs − 168 A
Avalanche ruggedness
W
DSS
non-repetitive avalanche energy unclamped inductive load; I
D
=34A;
V
DS
≤ 55 V; V
GS
=5V; R
GS
=50Ω;
starting T
mb
=25°C
− 57.8 mJ
