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BUK9528-55A,127
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
Philips Semiconductors
BUK9528-55A; B
UK9628-55A
T
renchMOS™ logic level FET
Product specification
Rev
. 01 — 18 January 2001
7 of 15
9397 750 07683
© Philips Electronics N.V
. 2001. All rights reser
ved.
I
D
= 1 mA; V
DS
=V
GS
T
j
=2
5
°
C; V
DS
=V
GS
Fig 9.
Gate-source threshold v
oltage as a function of
junction temperature.
Fig 10.
Sub-threshold drain current as a function of
gate-source v
oltage.
T
j
=2
5
°
C; V
DS
=2
5V
V
GS
= 0 V
; f = 1 MHz
Fig 11.
Forward transconductance as a function of
drain current; typical values.
Fig 12.
Input,
output
and
reverse
transfer capacitances
as a function of drain-source v
oltage; typical
values.
03aa33
0
0.5
1
1.5
2
2.5
-60
-20
20
60
100
140
180
max
typ
min
V
GS(th)
T
j
(
o
C)
(V)
03aa36
0
0.5
1
1.5
2
2.5
3
max
typ
min
I
D
V
GS
(V)
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
(A)
03na85
0
5
10
15
20
25
30
35
0
2
04
06
08
0
I
D
(A)
g
fs
(S)
03na88
0
500
1000
1500
2000
2500
3000
3500
10
-2
10
-1
1
10
10
2
V
DS
(V)
C (pF)
Ciss
Coss
Crss
Philips Semiconductors
BUK9528-55A; B
UK9628-55A
T
renchMOS™ logic level FET
Product specification
Rev
. 01 — 18 January 2001
8 of 15
9397 750 07683
© Philips Electronics N.V
. 2001. All rights reser
ved.
V
DS
=2
5V
T
j
=2
5
°
C; I
D
=2
5A
Fig 13.
T
ransfer characteristics: drain current as a
function of gate-source v
oltage; typical values.
Fig 14.
Gate-source v
oltage as a function of turn-on
gate charge; typical v
alues.
V
GS
=0V
Fig 15.
Rever
se diode current as a function of reverse diode v
oltage; typical values.
03na81
0
20
40
60
80
100
0123456
V
GS
(V)
I
D
(A)
T
j
= 175
o
C
T
j
= 25
o
C
03na83
0
1
2
3
4
5
6
01
0
2
0
3
0
Q
G
(nC)
V
GS
(V)
V
DD
= 44 V
V
DD
= 14 V
03na82
0
20
40
60
80
100
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V
SD
(V)
I
S
(A)
T
j
= 175
o
C
T
j
= 25
o
C
Philips Semiconductors
BUK9528-55A; B
UK9628-55A
T
renchMOS™ logic level FET
Product specification
Rev
. 01 — 18 January 2001
9 of 15
9397 750 07683
© Philips Electronics N.V
. 2001. All rights reser
ved.
9.
P
acka
g
e outline
Fig 16.
SO
T78 (TO-220AB).
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT78
SC-46
3-lead TO-220AB
D
D
1
q
P
L
12
3
L
2
(1)
b
1
e
e
b
0
5
10 mm
scale
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
DIMENSIONS (mm are the original dimensions)
A
E
A
1
c
Note
1. Terminals in this zone are not tinned.
Q
L
1
UNIT
A
1
b
1
D
1
e
P
mm
2.54
qQ
A
b
D
c
L
2
(1)
max.
3.0
3.8
3.6
15.0
13.5
3.30
2.79
3.0
2.7
2.6
2.2
0.7
0.4
15.8
15.2
0.9
0.7
1.3
1.0
4.5
4.1
1.39
1.27
6.4
5.9
10.3
9.7
L
1
E
L
99-09-13
00-09-07
mounting
base
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
BUK9528-55A,127
Mfr. #:
Buy BUK9528-55A,127
Manufacturer:
NXP Semiconductors
Description:
MOSFET N-CH 55V 42A TO220AB
Lifecycle:
New from this manufacturer.
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