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BUK9528-55A,127

P1-P3P4-P6P7-P9P10-P12P13-P15
Philips Semiconductors
BUK9528-55A; BUK9628-55A
TrenchMOS™ logic level FET
Product specification Rev. 01 — 18 January 2001 4 of 15
9397 750 07683
© Philips Electronics N.V. 2001. All rights reserved.
7. Thermal characteristics
7.1 Transient thermal impedance
Table 4: Thermal characteristics
Symbol Parameter Conditions Value Unit
R
th(j-a)
thermal resistance from junction to ambient vertical in still air; SOT78 package 60 K/W
mounted on printed circuit board;
minimum footprint; SOT404
package
50 K/W
R
th(j-mb)
thermal resistance from junction to mounting
base
Figure 4 1.5 K/W
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
03nc02
10
-2
10
-1
1
10
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
1
t
p
(s)
Z
th(j-mb)
(K/W)
δ = 0.5
t
p
t
p
T
P
t
T
δ =
Philips Semiconductors
BUK9528-55A; BUK9628-55A
TrenchMOS™ logic level FET
Product specification Rev. 01 — 18 January 2001 5 of 15
9397 750 07683
© Philips Electronics N.V. 2001. All rights reserved.
8. Characteristics
Table 5: Characteristics
T
j
=25
°
C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source breakdown
voltage
I
D
= 0.25 mA; V
GS
=0V
T
j
=25°C55−−V
T
j
= −55 °C50−−V
V
GS(th)
gate-source threshold voltage I
D
= 1 mA; V
DS
=V
GS
;
Figure 9
T
j
=25°C 1 1.5 2 V
T
j
= 175 °C 0.5 −−V
T
j
= −55 °C −−2.3 V
I
DSS
drain-source leakage current V
DS
= 55 V; V
GS
=0V
T
j
=25°C − 0.05 10 µA
T
j
= 175 °C −−500 µA
I
GSS
gate-source leakage current V
GS
= ±10 V; V
DS
=0V − 2 100 nA
R
DSon
drain-source on-state
resistance
V
GS
=5V; I
D
=15A;
Figure 7 and 8
T
j
=25°C − 24 28 mΩ
T
j
= 175 °C −−56 mΩ
V
GS
= 4.5 V; I
D
=15A −−30 mΩ
V
GS
=10V; I
D
=15A − 22 25 mΩ
Dynamic characteristics
C
iss
input capacitance V
GS
=0V; V
DS
=25V;
f = 1 MHz; Figure 12
− 1200 1725 pF
C
oss
output capacitance − 210 252 pF
C
rss
reverse transfer capacitance − 140 195 pF
t
d(on)
turn-on delay time V
DD
= 30 V; R
L
= 1.2 Ω;
V
GS
=5V; R
G
=10Ω
− 14 − ns
t
r
rise time − 125 − ns
t
d(off)
turn-off delay time − 64 − ns
t
f
fall time − 68 − ns
L
d
internal drain inductance from drain lead 6 mm from
package to centre of die
− 4.5 − nH
from contact screw on
mounting base to centre of
die SOT78
− 3.5 − nH
from upper edge of drain
mounting base to centre of
die SOT404
− 2.5 − nH
L
s
internal source inductance from source lead to source
bond pad
− 7.5 − nH
Philips Semiconductors
BUK9528-55A; BUK9628-55A
TrenchMOS™ logic level FET
Product specification Rev. 01 — 18 January 2001 6 of 15
9397 750 07683
© Philips Electronics N.V. 2001. All rights reserved.
Source-drain diode
V
SD
source-drain (diode forward)
voltage
I
S
= 25 A; V
GS
=0V;
Figure 15
− 0.85 1.2 V
t
rr
reverse recovery time I
S
=20A;dI
S
/dt = −100 A/µs
V
GS
= −10 V; V
DS
=30V
− 35 − ns
Q
r
recovered charge − 70 − nC
Table 5: Characteristics
…continued
T
j
=25
°
C unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
T
j
=25°C; t
p
= 300 µsT
j
=25°C; I
D
=15A
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6. Drain-source on-state resistance as a function
of gate-source voltage; typical values.
T
j
=25°C
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8. Normalized drain-source on-state resistance
factor as a function of junction temperature.
03na86
0
20
40
60
80
100
120
140
160
0246810
V
DS
(V)
I
D
(A)
2.2
3
4
5
6
7
8
V
GS
(V) = 10
9
03na84
10
15
20
25
30
35
246810
V
GS
(V)
R
DSon
(mΩ)
03na87
15
20
25
30
35
40
45
50
55
0 102030405060708090
I
D
(A)
R
DSon
(mΩ)
5
3.2 3.4
3.6 3.8
4
V
GS
(V) = 3
03aa28
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
-60 -20 20 60 100 140 180
T
j
(
o
C)
a
a
R
DSon
R
DSon 25 C
°
()
----------------------------
=
P1-P3P4-P6P7-P9P10-P12P13-P15

BUK9528-55A,127

Mfr. #:
Buy BUK9528-55A,127
Manufacturer:
NXP Semiconductors
Description:
MOSFET N-CH 55V 42A TO220AB
Lifecycle:
New from this manufacturer.
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