IS62LV256 ISSI
®
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
7
Rev. K
12/11/02
WRITE CYCLE SWITCHING CHARACTERISTICS
(1,2,3)
(Over Operating Range)
-45 ns -70 ns
Symbol Parameter Min. Max. Min. Max. Unit
tWC Write Cycle Time 45 — 70 — ns
tSCE CE to Write End 35 — 60 — ns
tAW Address Setup Time to Write End 25 — 60 — ns
tHA Address Hold from Write End 0 — 0 — ns
tSA Address Setup Time 0 — 0 — ns
tPWE
(4)
WE Pulse Width 25 — 55 — ns
tSD Data Setup to Write End 20 — 30 — ns
tHD Data Hold from Write End 0 — 0 — ns
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and
output loading specified in Figure 1a.
2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. The internal write time is defined by the overlap of CE LOW and WE LOW. All signals must be in valid states to initiate a Write, but
any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of
the signal that terminates the Write.
4. Tested with OE HIGH.
