2010 Sep 16 2
NXP Semiconductors Product specification
N-channel dual-gate PoLo MOS-FETs BF1202; BF1202R; BF1202WR
FEATURES
Short channel transistor with high
forward transfer admittance to input
capacitance ratio
Low noise gain controlled amplifier
Partly internal self-biasing circuit to
ensure good cross-modulation
performance during AGC and good
DC stabilization.
APPLICATIONS
VHF and UHF applications with
3 to 9 V supply voltage, such as
digital and analogue television
tuners and professional
communications equipment.
DESCRIPTION
Enhancement type N-channel
field-effect transistor with source and
substrate interconnected. Integrated
diodes between gates and source
protect against excessive input
voltage surges. The BF1202,
BF1202R and BF1202WR are
encapsulated in the SOT143B,
SOT143R and SOT343R plastic
packages respectively.
PINNING
Marking code legend:
* = - : made in Hong Kong
* = p : made in Hong Kong
* = t : made in Malaysia
PIN DESCRIPTION
1source
2drain
3gate2
4gate1
handbook, 2 columns
Top view
MSB014
12
34
Fig.1 Simplified outline
(SOT143B).
BF1202 marking code: LD*
handbook, 2 columns
Top view MSB035
12
43
Fig.2 Simplified outline
(SOT143R).
BF1202R marking code: LE*
lfpage
Top view
MSB842
21
43
Fig.3 Simplified outline
(SOT343R).
BF1202WR marking code: LE*
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
DS
drain-source voltage 10 V
I
D
drain current 30 mA
P
tot
total power dissipation 200 mW
y
fs
forward transfer admittance 25 30 40 mS
C
ig1-ss
input capacitance at gate 1 1.7 2.2 pF
C
rss
reverse transfer capacitance f = 1 MHz 15 30 fF
F noise figure f = 800 MHz 1.1 1.8 dB
X
mod
cross-modulation input level for k = 1% at
40 dB AGC
100 105 dBV
T
j
operating junction temperature 150 C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
