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BF1202,215

P1-P3P4-P6P7-P9P10-P12P13-P15
2010 Sep 16 7
NXP Semiconductors Product specification
N-channel dual-gate PoLo MOS-FETs BF1202; BF1202R; BF1202WR
handbook, halfpage
0246
40
30
10
0
20
MCD960
V
G2-S
(V)
I
G1
(μA)
4 V
3.5 V
3 V
4.5 V
V
GG
= 5 V
Fig.13 Gate 1 current as a function of gate 2
voltage; typical values.
V
DS
=5V; T
j
=25C.
R
G1
=120k (connected to V
GG
); see Fig.21.
handbook, halfpage
012 4
0
−50
−10
3
V
AGC
(V)
gain
reduction
(dB)
−20
−30
−40
MCD961
Fig.14 Typical gain reduction as a function of the
AGC voltage; see Fig.21.
V
DS
=5V; V
GG
=5V; R
G1
= 120 k;
f = 50 MHz; T
amb
=25C.
handbook, halfpage
0
gain reduction (dB)
10 50
120
110
90
80
100
20 30 40
MCD962
V
unw
(dBμV)
Fig.15 Unwanted voltage for 1% cross-modulation
as a function of gain reduction; typical
values; Fig.21.
V
DS
=5V; V
GG
=5V; R
G1
= 120 k;
f= 50 MHz; f
unw
=60MHz; T
amb
=25C.
handbook, halfpage
0
gain reduction (dB)
10 50
16
12
4
0
8
20 30 40
MCD963
I
D
(mA)
Fig.16 Drain current as a function of gain
reduction; typical values; see Fig.21.
V
DS
=5V; V
GG
=5V; R
G1
= 120 k;
f = 50 MHz; T
amb
=25C.
2010 Sep 16 8
NXP Semiconductors Product specification
N-channel dual-gate PoLo MOS-FETs BF1202; BF1202R; BF1202WR
handbook, halfpage
MCD964
10
f (GHz)
Y
is
(mS)
10
2
10
3
10
2
10
1
10
−1
b
is
g
is
Fig.17 Input admittance as a function of frequency;
typical values.
V
DS
=5V; V
G2
=4V.
I
D
=12mA; T
amb
=25C.
handbook, halfpage
MCD965
10
f (MHz)
10
2
10
3
10
3
10
2
10
1
−10
3
−10
2
−10
−1
y
rs
(μS)
ϕ
rs
(deg)
ϕ
rs
y
rs
Fig.18 Reverse transfer admittance and phase as
a function of frequency; typical values.
V
DS
=5V; V
G2
=4V.
I
D
=12mA; T
amb
=25C.
handbook, halfpage
10
2
10
1
−10
2
−10
−1
MCD966
10 10
2
10
3
f (MHz)
y
fs
(mS)
ϕ
fs
(deg)
y
fs
ϕ
fs
Fig.19 Forward transfer admittance and phase as
a function of frequency; typical values.
V
DS
=5V; V
G2
=4V.
I
D
=12mA; T
amb
=25C.
handbook, halfpage
MCD967
10
b
os
f (MHz)
Y
os
(mS)
10
2
10
3
10
1
10
−2
10
−1
g
os
Fig.20 Output admittance as a function of
frequency; typical values.
V
DS
=5V; V
G2
=4V.
I
D
=12mA; T
amb
=25C.
2010 Sep 16 9
NXP Semiconductors Product specification
N-channel dual-gate PoLo MOS-FETs BF1202; BF1202R; BF1202WR
handbook, full pagewidth
DUT
C1
4.7 nF
R1
10 kΩ
MGS315
C4
4.7 nF
L1
≈2.2 μH
C3
4.7 nF
R
L
50 Ω
V
GG
V
AGC
V
DS
R
GEN
50 Ω
V
I
R2
50 Ω
4.7 nF
C2
R
G1
Fig.21 Cross-modulation test set-up.
Table 1 Scattering parameters: V
DS
=5V; V
G2-S
=4V; I
D
=12mA; T
amb
=25C
Table 2 Noise data: V
DS
=5V; V
G2-S
=4V; I
D
=12mA; T
amb
=25C
f
(MHz)
s
11
s
21
s
12
s
22
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
MAGNITUDE
(ratio)
ANGLE
(deg)
50 0.988 3.26 2.989 176.2 0.0005 92.6 0.995 1.50
100 0.988 6.52 3.017 172.5 0.0009 88.0 0.995 3.01
200 0.984 12.99 2.990 165.0 0.0018 82.5 0.994 5.95
300 0.977 19.39 2.949 157.6 0.0027 78.2 0.992 8.86
400 0.965 25.65 2.913 150.3 0.0036 75.4 0.990 11.79
500 0.951 31.76 2.853 143.2 0.0039 71.8 0.988 14.65
600 0.936 37.68 2.793 136.3 0.0042 69.9 0.986 17.41
700 0.919 43.42 2.727 129.5 0.0044 68.9 0.984 20.10
800 0.903 48.94 2.664 123.0 0.0043 68.5 0.980 22.69
900 0.887 54.25 2.593 116.7 0.0041 70.7 0.975 25.27
1000 0.870 59.34 2.518 110.5 0.0038 72.4 0.970 27.90
f
(MHz)
F
min
(dB)
opt
R
n
()
(ratio) (deg)
400 0.9 0.805 28.5 50
800 1.1 0.725 47.2 40
P1-P3P4-P6P7-P9P10-P12P13-P15

BF1202,215

Mfr. #:
Buy BF1202,215
Manufacturer:
NXP Semiconductors
Description:
RF MOSFET Transistors Dual N-Channel 10V 30mA 200mW
Lifecycle:
New from this manufacturer.
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