1 Electrical ratings
Table 2: Absolute maximum ratings
Symbol Parameter Value Unit
V
GS
Gate-source voltage ± 25 V
I
D
Drain current (continuous) at T
C
= 25 °C 32 A
I
D
Drain current (continuous) at T
C
= 100 °C
20
A
I
DM
(1)
Drain current (pulsed) 128 A
P
TOT
Total dissipation at T
C
= 25 °C
250
W
dv/dt
(2)
Peak diode recovery voltage slope 15 V/ns
dv/dt
(3)
MOSFET dv/dt ruggedness 50 V/ns
T
stg
Storage temperature - 55 to 150
°C
T
j
Max. operating junction temperature 150
Notes:
(1)
Pulse width limited by safe operating area.
(2)
I
SD
≤ 32 A, di/dt ≤ 400 A/µs; V
DS peak
< V
(BR)DSS
, V
DD
= 400 V
(3)
V
DS
≤ 520 V
Table 3: Thermal data
Symbol Parameter Value Unit
R
thj-case
Thermal resistance junction-case max
0.5
°C/W
R
thj-amb
Thermal resistance junction-ambient max 50 °C/W
Table 4: Avalanche characteristics
Symbol Parameter Value Unit
I
AR
Avalanche current, repetitive or not repetitive (pulse width
limited by T
jmax
)
3 A
E
AS
Single pulse avalanche energy (starting T
j
= 25 °C,
I
D
= I
AR
, V
DD
= 50 V)
820 mJ
