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STW40N65M2
P1-P3
P4-P6
P7-P9
P10-P12
STW
40N65M2
Electrica
l chara
cteristics
DocID02
7443
Re
v
1
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12
Figure
8
: Static drain
-
source on
-
resist
ance
Figure
9
: Nor
malized on
-
resistance
vs.
temperature
Figure
10
: Gate char
ge vs. gat
e
-
source
voltage
Figure
11
: Capacitan
ce varia
tions
Figure
12
: Outpu
t capacitan
ce stored ener
gy
Figure
13
: Source
-
drain
diode f
orw
ar
d
characteri
stics
Test circu
its
STW
40N65M2
8/
12
DocID02
7443
Re
v
1
3
Test circuits
Figure
14
: Switchin
g times t
est circui
t for res
istive
load
Figure
15
: Gate char
ge test
circuit
Figure
16
: Test circu
it for inductiv
e load
switching and d
iode recov
ery
times
Figure
17
: Unclamped in
ductive load te
st circuit
Figure
18
: Unclamped
induc
tive
waveform
Figure
19
: Switching time waveform
A
M
01469v
1
V
DD
47 k
Ω
1 k
Ω
47 k
Ω
2.7 k
Ω
1 k
Ω
12 V
V
i
≤
V
GS
2200 μ
F
P
W
I
G
=
CONST
100 Ω
100 nF
D
.U
.T
.
V
G
AM01470v1
A
D
D.U.
T
.
S
B
G
25
A
A
B
B
R
G
G
F
AST
DIO
DE
D
S
L=100 µH
µF
3.3
1000
µF
V
DD
Ω
D.U.
T
.
V
(B
R
)D
S
S
V
DD
V
DD
V
D
I
DM
I
D
A
M
01472v
1
A
M
01473v
1
0
V
GS
90%
V
DS
t
on
90%
10%
90%
10%
t
d(on)
t
r
t
t
d(off)
t
f
10%
0
off
STW
40N65M2
Package
information
DocID02
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Re
v
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12
4
Package
inf
ormatio
n
In order t
o meet en
vironm
ental r
equirem
ents, ST
off
ers these d
evices
in diff
erent gr
ades of
ECOP
ACK
®
pack
ages, dep
ending on t
heir le
vel of en
vir
onmental c
ompliance.
ECO
PACK
®
specif
ications, gr
ade def
initions a
nd produc
t status
are av
ailable at:
www.st.c
om
.
ECOP
ACK
®
is an ST
tradem
ark.
4.1
TO
-
247 package information
Figure
20
: TO
-
247 drawing
0075325_H
P1-P3
P4-P6
P7-P9
P10-P12
STW40N65M2
Mfr. #:
Buy STW40N65M2
Manufacturer:
STMicroelectronics
Description:
MOSFET N-channel 650 V, 0.087 Ohm typ., 32 A MDmesh M2 Power MOSFET in TO-220 package
Lifecycle:
New from this manufacturer.
Delivery:
DHL
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STW40N65M2