Electrical characteristics
2 Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Table 5: On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown
voltage
V
GS
= 0 V, I
D
= 1 mA 650
V
I
DSS
Zero gate voltage Drain
current
V
GS
= 0 V, V
DS
= 650 V
1 µA
V
GS
= 0 V, V
DS
= 650 V,
T
C
= 125 °C
100 µA
I
GSS
Gate-body leakage current
V
DS
= 0 V, V
GS
= ± 25 V
±10 µA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 µA 2 3 4 V
R
DS(on)
Static drain-source on-
resistance
V
GS
= 10 V, I
D
= 16 A
0.087 0.099 Ω
Table 6: Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
iss
Input capacitance
V
DS
= 100 V, f = 1 MHz,
V
GS
= 0 V
- 2355 - pF
C
oss
Output capacitance - 102 - pF
C
rss
Reverse transfer
capacitance
-
2.7
- pF
C
oss eq.
(1)
Equivalent output
capacitance
V
DS
= 0 V to 520 V, V
GS
= 0 V - 380 - pF
R
G
Intrinsic gate resistance f = 1 MHz open drain - 4.5 - Ω
Q
g
Total gate charge
V
DD
= 520 V, I
D
= 32 A,
V
GS
= 10 V (see Figure 15:
"Gate charge test circuit")
- 56.5 - nC
Q
gs
Gate-source charge -
8
- nC
Q
gd
Gate-drain charge - 24 - nC
Notes:
(1)
C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
Table 7: Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time
V
DD
= 325 V, I
D
= 16 A
R
G
= 4.7 Ω, V
GS
= 10 V (see
Figure 14: "Switching times
test circuit for resistive load"
and Figure 19: "Switching time
waveform")
-
15
- ns
t
r
Rise time - 10 - ns
t
d(off)
Turn-off-delay time -
96.5
- ns
t
f
Fall time - 12 - ns
