PS22053

MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS22053
TRANSFER-MOLD TYPE
INSULATED TYPE
May 2005
All external terminals are treated with lead free solder (ingredient : Sn-Cu) plating.
Type name , Lot No.
QR
Code
22 23 24 25 26 27 28
2.54
±
0.3
302.54(=76.2)
79
±
0.5
67
±
0.3
8
±
0.3
10.16
±
0.3
1. VUFS
2. VUFB
3. VP1
4. UP
5. VVFS
6. VVFB
7. VP1
8. VP
9. VWFS
10. VWFB
11. VP1
12. VPC
13. WP
14. VN1
15. VNC
16. CIN
17. CFO
18. FO
19. UN
20. VN
21. WN
22. P
23. U
24. V
25. W
26. NU
27. NV
28. NW
12 34 56 78 9
10 11 12 13 14 15 16 17 18 19 20 21
2-φ4.5
±
0.2
18.5
±
0.5
44
±
0.5
20.4
±
0.5
42.6
±
0.5
34
±
0.5
27.4
±
0.5
8.2
±
0.5
16.1
±
0.3
(2.5)
(2)
(2)
(0.3)
(1.7)
(0.3)
Heat sink side
A
48.6
±
0.6
Heat sink side
Detail : A
PS22053
INTEGRATED POWER FUNCTIONS
1200V/10A low-loss 4
th
generation IGBT inverter bridge
for 3 phase DC-to-AC power conversion
APPLICATION
AC400V 0.2kW~0.75kW inverter drive for small power motor control.
Fig. 1 PACKAGE OUTLINES
MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS22053
TRANSFER-MOLD TYPE
INSULATED TYPE
INTEGRATED DRIVE, PROTECTION AND SYSTEM CONTROL FUNCTIONS
For upper-leg IGBTS :Drive circuit, High voltage high-speed level shifting, Control supply under-voltage (UV) protection.
For lower-leg IGBT
S : Drive circuit, Control supply under-voltage protection (UV), Short circuit protection (SC).
Fault signaling : Corresponding to an SC fault (Lower-side IGBT) or a UV fault (Lower-side supply).
Input interface : 5V line CMOS/TTL compatible (High active logic).
Dimensions in mm
MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS22053
TRANSFER-MOLD TYPE
INSULATED TYPE
May 2005
Fig. 2 INTERNAL FUNCTIONS BLOCK DIAGRAM (TYPICAL APPLICATION EXAMPLE)
Z : ZNR (Surge absorber)
C : AC filter (Ceramic capacitor 2.2~6.5nF)
(Protection against common-mode noise)
Note1: To prevent input signals oscillation, an RC coupling at each input terminal is recommended.
2: By virtue of integrating HVIC inside the module, direct coupling to MCU terminals without any opto-coupler or transformer isolation is possible.
3: Fo output is open drain type. The signal line should be pulled up to the positive side of a 5V supply with an approximate 10k resistor.
4: The wiring between the power DC-link capacitor and the P/N1 terminals should be as short as possible to protect DIP-IPM against catastrophic high
surge voltage. For extra precaution, a small film type snubber capacitor (0.1~0.22µF, high voltage type) is recommended to mount closely to the
P and N1 terminals.
5: Fo output pulse width (t
FO
) should be determined by connecting external capacitor between CFO and V
NC
terminals. (Example : t
FO
=2.4ms(typ.)
at C
FO
=22nF)
6: High voltage (1200V or more) and fast recovery type (less than 100ns) diodes should be used for the bootstrap circuit.
7: It is recommended to insert a Zener diode (24V/1W) between each pair of control supply terminals to prevent surge destruction.
8: To prevent LVIC from surge destruction, it is recommended to mount a fast recovery type diode between V
NC
and NU, NV, NW terminals.
CBU–
CBU+
CBV–
CBV+
CBW–
CBW+
F
O
CFO
M
(Note 7)
DIP-IPM
C2
C1
(Note 4)
Z
(15V line)
V
D
V
NC
C
H-side IGBT
S
L-side IGBT
S
W
V
U
P
N
1
NW
NV
NU
High-side input (PWM)
(5V line) (Note 1,2)
(Note 6)
AC line output
Input signal
conditioning
Level shifter
Drive circuit
Protection
circuit (UV)
Input signal
conditioning
Input signal
conditioning
circuit (UV)
Protection
circuit (UV)
Drive circuit Drive circuit
Level shifter Level shifter
Protection
Drive circuit
Input signal conditioning
Fo logic
Protection
circuit
Control supply
Under-Voltage
protection (UV)
AC line input
Inrush current
limiter circuit
(5V line) (Note 1, 2)
Fault output (5V line)
(Note 3, 5)
Low-side input (PWM)
C1 : Tight tolerance, temp-compensated electrolytic type
C2 : 0.22~2µF R-category ceramic capacitor for noise filtering
(Note : The capacitance depends on the PWM control
scheme used in the applied system.)
(Note 8)
V
NC
CIN
Fig. 3 EXTERNAL PART OF THE DIP-IPM PROTECTION CIRCUIT
Note1: In the recommended external protection circuit, please select the RC time
constant in the range 1.5~2.0µs.
2: To prevent erroneous protection operation, the wiring of A, B, C should be
as short as possible.
Drive circuit
Drive circuit
Protection circuit
SC protection
trip level
I
C
(A)
t
w
(µs)
2
0
Short Circuit Protective Function (SC) :
SC protection is achieved by sensing the L-side DC-Bus current (through the external
shunt resistor) with a suitable filtering time (defined by the RC circuit).
When the sensed shunt voltage exceeds the SC trip-level, all the L-side IGBTs are turned
OFF and a fault signal (Fo) is output.
Since the SC fault may be repetitive, it is recommended to stop the system and check the fault,
when the Fo signal is received.
(Note 1)
(Note 2)
W
V
U
V
NC
CIN
A
P
N1
C
R
Shunt
resistor
External protection circuit
DIP-IPM
L-side IGBT
S
H-side IGBT
S
NU
NV
NW
B
C
Collector current
waveform
MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS22053
TRANSFER-MOLD TYPE
INSULATED TYPE
May 2005
Note 2 : TC MEASUREMENT POINT
Power terminals
TC
Heat-sink
Heat sink boundary
Control terminals
TC
800
20~+100
40~+125
2500
V
D = 13.5~16.5V, Inverter part
T
j = 125°C, non-repetitive, less than 2 µs
(Note 2)
60Hz, Sinusoidal, AC 1 minute, connection
pins to heat-sink plate
V
CC(PROT)
TC
Tstg
Viso
V
V
V
V
mA
V
20
20
0.5~VD+0.5
0.5~V
D+0.5
1
0.5~V
D+0.5
Applied between V
P1-VPC, VN1-VNC
Applied between VUFB-VUFS, VVFB-VVFS,
V
WFB-VWFS
Applied between UP, VP, WP-VPC,
U
N, VN, WN-VNC
Applied between FO-VNC
Sink current at FO terminal
Applied between CIN-V
NC
Control supply voltage
Control supply voltage
Input voltage
Fault output supply voltage
Fault output current
Current sensing input voltage
V
D
VDB
VIN
VFO
IFO
VSC
900
1000
1200
10
20
50.0
20~+125
Applied between P-NU, NV, NW
Applied between P-NU, NV, NW
T
C = 25°C
T
C = 25°C, less than 1ms
T
C = 25°C, per 1 chip
(Note 1)
V
CC
VCC(surge)
VCES
±IC
±ICP
PC
Tj
ConditionSymbol Parameter Ratings Unit
Supply voltage
Supply voltage (surge)
Collector-emitter voltage
Each IGBT collector current
Each IGBT collector current (peak)
Collector dissipation
Junction temperature
V
V
V
A
A
W
°C
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
INVERTER PART
ConditionSymbol
Parameter
Ratings Unit
CONTROL (PROTECTION) PART
Symbol Ratings Unit
Self protection supply voltage limit
(short circuit protection capability)
Module case operation temperature
Storage temperature
Isolation voltage
V
°C
°C
V
rms
TOTAL SYSTEM
Note 1 : The maximum junction temperature rating of the power chips integrated within the DIP-IPM is 150°C (@ TC 100°C) however, to en-
sure safe operation of the DIP-IPM, the average junction temperature should be limited to T
j(ave) 125°C (@ TC 100°C).
Parameter
Condition

PS22053

Mfr. #:
Manufacturer:
Description:
MOD IPM 1200V 10A DIP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet