PS22053

MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS22053
TRANSFER-MOLD TYPE
INSULATED TYPE
May 2005
3.4
3.2
3.0
2.2
0.7
3.8
0.7
1
10
2.00
2.67
0.047
mA
V
T
j = 25°C
Tj = 125°C
T
j = 25°C
Tj = 125°C
V
CE(sat)
VEC
ton
trr
tc(on)
toff
tc(off)
ICES
ConditionSymbol Parameter
Limits
Inverter IGBT part (per 1/6 module)
Inverter FWDi part (per 1/6 module)
Case to fin, (per 1 module) thermal grease applied
R
th(j-c)Q
Rth(j-c)F
Rth(c-f)
Min.
THERMAL RESISTANCE
Typ. Max.
Unit
I
C = 10A, VIN = 0V
Condition
Symbol Parameter
Limits
Min. Typ. Max.
0.8
Unit
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Collector-emitter saturation
voltage
FWDi forward voltage
Junction to case thermal
resistance
VD = VDB = 15V
VIN = 5V, IC = 10A
Switching times
V
CC = 600V, VD = VDB = 15V
IC = 10A, Tj = 125°C, VIN = 0
5V
Inductive load (upper-lower arm)
Collector-emitter cut-off
current
V
CE = VCES
2.7
2.5
2.5
1.5
0.2
0.4
2.8
0.4
V
µs
µs
µs
µs
µs
°C/W
°C/W
°C/W
CONTROL (PROTECTION) PART
Note 4: Short circuit protection is functioning only at the low-arms. Please select the value of the external shunt resistor such that the SC trip-
level is less than 1.7 times device current rating.
5:Fault signal is output when the low-arms short circuit or control supply under-voltage protective functions operate. The fault output pulse-
width t
FO depends on the capacitance value of CFO according to the following approximate equation : CFO = 9.3 10
-6
tFO [F].
Symbol
I
D
VFOH
VFOL
VSC(ref)
IIN
UVDBt
UVDBr
UVDt
UVDr
tFO
Vth(on)
Vth(off)
Parameter Condition
Limits
Unit
Circuit current
Fault output voltage
Short circuit trip level
Supply circuit under-voltage
protection
Fault output pulse width
ON threshold voltage
OFF threshold voltage
V
D = VDB = 15V
V
IN = 5V
Total of V
P1-VPC, VN1-VNC
VUFB-VUFS, VVFB-VVFS, VWFB-VWFS
VSC = 0V, FO circuit pull-up to 5V with 10k
V
SC = 1V, IFO = 1mA
T
j = 25°C, VD = 15V (Note 4)
V
IN = 5V
Trip level
Reset level
Trip level
Reset level
C
FO = 22nF (Note 5)
Applied between U
P, VP, WP-VPC, UN, VN, WN-VNC
4.9
0.43
0.7
10.0
10.5
10.3
10.8
1.6
2.0
0.8
0.48
1.5
2.4
3.0
1.4
3.70
1.30
3.50
1.30
1.10
0.53
2.0
12.0
12.5
12.5
13.0
4.2
2.0
Min. Typ. Max.
mA
mA
mA
mA
V
V
V
mA
V
V
V
V
ms
V
V
V
D = VDB = 15V
V
IN = 0V
Total of V
P1-VPC, VN1-VNC
VUFB-VUFS, VVFB-VVFS, VWFB-VWFS
Tj 125°C
Note 3: Grease with good thermal conductivity and long-term endurance should be applied evenly with about +100µm~+200µm on the con-
tacting surface of DIP-IPM and heat-sink.
Input current
Contact thermal resistance (Note 3)
MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS22053
TRANSFER-MOLD TYPE
INSULATED TYPE
May 2005
Note 6: Measurement point of heat-sink flatness
+
+
Measurement location
Heat-sink side
Heat-sink side
3.25mm
Mounting screw : M4
Condition
Parameter
Limits
Mounting torque
Weight
Heat-sink flatness
Min.
MECHANICAL CHARACTERISTICS AND RATINGS
Typ. Max.
0.98
50
Unit
77
1.47
100
N·m
g
µm
Recommended 1.18 N·m
(
Note 6
)
V
V
V
V/µs
µs
kHz
Arms
Applied between P-NU, NV, NW
Applied between V
P1-VPC, VN1-VNC
Applied between VUFB-VUFS, VVFB-VVFS, VWFB-VWFS
For each input signal, TC 100°C
T
C 100°C, Tj 125°C
V
CC = 600V, VD = 15V, fC = 15kHz
P.F = 0.8, sinusoidal PWM
T
j 125°C, TC 100°C (Note 7)
(Note 8)
800
16.5
16.5
1
15
3.4
V
CC
VD
VDB
VD, VDB
tdead
fPWM
IO
PWIN(on)
PWIN(off)
Condition
Symbol Parameter
Limits
Min. Typ. Max.
350
13.5
13.5
1
3.3
1.5
Unit
RECOMMENDED OPERATION CONDITIONS
600
15.0
15.0
Note 7: The output r.m.s. current value depends on the actual application conditions.
8:DIP-IPM might not make response to the input on signal with pulse width less than PWIN (on).
9:DIP-IPM might not make response or work properly if the input off signal pulse width is less than PWIN (off).
Minimum input pulse width
V
NC
Supply voltage
Control supply voltage
Control supply voltage
Control supply variation
Arm shoot-through blocking time
PWM input frequency
Output r.m.s. current
V
NC variation
V
5.0
5.0
Between V
NC-NU, NV, NW (including surge)
350
V
CC 800V,
13.5
V
D 16.5V,
13.5
V
DB 16.5V,
20°C
T
C 100°C,
N line wiring inductance less than
10nH
(Note 9)
Ic 10A
10 < Ic 17A
µs
2.5
2.7
MITSUBISHI SEMICONDUCTOR <Dual-In-Line Package Intelligent Power Module>
PS22053
TRANSFER-MOLD TYPE
INSULATED TYPE
May 2005
Fig. 4 THE DIP-IPM INTERNAL CIRCUIT
DIP-IPM
UOUT
UVNO
VVNO
VOUT
WOUT
WVNO
CFO
GND
Fo
W
N
VN
UN
VCC
HVIC3
HVIC2
HVIC1
LVIC
CFO CIN
CIN
W
V
U
P
HO
IN
COM
VB
VS
VCC
HO
IN
COM
VB
VS
VCC
HO
IN
COM
VB
VS
VCC
Fo
WN
VN
UN
WP
VP
UP
VNC
VN1
VP1
VP1
VP1
VWFS
VVFS
VUFS
VWFB
VVFB
VUFB
NU
NV
NW
IGBT1
IGBT2
IGBT3
IGBT4
IGBT5
IGBT6
Di1
Di2
Di3
Di4
Di5
Di6
VPC

PS22053

Mfr. #:
Manufacturer:
Description:
MOD IPM 1200V 10A DIP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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