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PHPT60603NYX

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
NXP Semiconductors
PHPT60603NY
60V, 3 A NPN high power bipolar transistor
PHPT60603NY All information provided in this document is subject to legal disclaimers. © NXP N.V. 2014. All rights reserved
Product data sheet 10 January 2014 9 / 15
11. Test information
006aaa266
-
I
Bon
(100 %)
-
I
B
input pulse
(idealized waveform)
-
I
Boff
90 %
10 %
-
I
C
(100 %)
-
I
C
t
d
t
on
90 %
10 %
t
r
output pulse
(idealized waveform)
t
f
t
t
s
t
off
Fig. 12. BISS transistor switching time definition
R
C
R2
R1
DUT
mgd624
V
o
R
B
(probe)
450 Ω
(probe)
450 Ω
oscilloscope
oscilloscope
V
BB
V
I
V
CC
Fig. 13. Test circuit for switching times
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
NXP Semiconductors
PHPT60603NY
60V, 3 A NPN high power bipolar transistor
PHPT60603NY All information provided in this document is subject to legal disclaimers. © NXP N.V. 2014. All rights reserved
Product data sheet 10 January 2014 10 / 15
12. Package outline
References
Outline
version
European
projection
Issue date
IEC JEDEC JEITA
SOT669
MO-235
sot669_po
11-03-25
13-02-27
Unit
(1)
mm
max
nom
min
1.20
1.01
0.15
0.00
0.25
0.50
0.35
4.41
3.62
2.2
2.0
6.2
5.8
0.85
0.40
A
Dimensions (mm are the original dimensions)
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads SOT669
A
1
A
2
1.10
0.95
A
3
b b
2
b
3
0.1
L
2
w y
8
°
0
°
θ
b
4
c c
2
D
(1)
D
1
(1)
E
(1)
E
1
(1)
3.3
3.1
e
1.27
H L
0.25
0.19
0.30
0.24
4.20 1.3
0.8
0.25
0.9
0.7
4.10
3.80
5.0
4.8
1.3
0.8
L
1
A C
1/2 e
w A
0 5 mm
scale
e
E
1
b
c
2
A
2
1
2 3 4
mounting
base
D
1
c
E
b
2
b
3
b
4
H
D
L
2
L
1
C
X
y C
q
(A
3
)
L
A
A
1
detail X
Fig. 14. Package outline LFPAK56; Power-SO8 (SOT669)
NXP Semiconductors
PHPT60603NY
60V, 3 A NPN high power bipolar transistor
PHPT60603NY All information provided in this document is subject to legal disclaimers. © NXP N.V. 2014. All rights reserved
Product data sheet 10 January 2014 11 / 15
13. Soldering
0.6
(3×)
0.7
(4×)
0.25
(2×)
0.25
(2×)
0.6
(4×)
4.2
4.7
0.25
(2×)
1.27
1.1
2
3.81
0.9
(3×)
SP opening =
Cu - 0.050
SR opening =
Cu + 0.075
2.15
2.55
3.45
3.5
3.3
solder lands
solder resist
occupied area
solder paste
125 µm stencil
Dimensions in mm
SOT669
Footprint information for reflow soldering
sot669_fr
Fig. 15. Reflow soldering footprint for LFPAK56; Power-SO8 (SOT669)
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

PHPT60603NYX

Mfr. #:
Buy PHPT60603NYX
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT NPN High Power BipolarTransistor
Lifecycle:
New from this manufacturer.
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