NXP Semiconductors
PHPT60603NY
60V, 3 A NPN high power bipolar transistor
PHPT60603NY All information provided in this document is subject to legal disclaimers. © NXP N.V. 2014. All rights reserved
Product data sheet 10 January 2014 3 / 15
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - 60 V
V
CEO
collector-emitter voltage open base - 60 V
V
EBO
emitter-base voltage open collector - 7 V
I
C
collector current - 3 A
I
CM
peak collector current single pulse; t
p
≤ 1 ms - 8 A
I
B
base current - 0.5 A
[1] - 1.25 W
[2] - 3 W
[3] - 5 W
P
tot
total power dissipation T
amb
≤ 25 °C
[4] - 25 W
T
j
junction temperature - 175 °C
T
amb
ambient temperature -55 175 °C
T
stg
storage temperature -65 175 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB); single-sided copper; tin-plated and standard
footprint.
[2]
Device mounted on an FR4 PCB; single-sided copper; tin-plated and mounting pad for collector 6 cm
2
.
[3] Device mounted on an ceramic PCB; Al
2
O
3
, standard footprint.
[4] Power dissipation from junction to mounting base.
aaa-010424
T
amb
(°C)
-75 22512525
4
2
6
8
P
tot
(W)
0
(1)
(2)
(3)
(1) Ceramic PCB, Al
2
O
3
, standard footprint
(2) FR4 PCB, mounting pad for collector 6 cm
2
(3) FR4 PCB, standard footprint
Fig. 1. Power derating curves
