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PTFA211801F V4 R250

P1-P3P4-P6P7-P9P10-P11
Data Sheet 1 of 11 Rev. 03, 2005-06-10
All published data at T
CASE
= 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
PTFA211801E
PTFA211801F
Description
The PTFA211801E and PTFA211801F are thermally-enhanced,
180-watt, internally matched GOLDMOS FETs intended for WCDMA
applications. They are characaterized for single- and two-carrier
WCDMA operation from 2110 to 2170 MHz. Thermally-enhanced
packaging provides the coolest operation available. Full gold
metallization ensures excellent device lifetime and reliability.
PTFA211801E
Package 30260
Thermally-Enhanced High Power RF LDMOS FETs
180 W, 2110 – 2170 MHz
2-Carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 1.2 A, f = 2140 MHz, 3GPP WCDMA
signal, P/A R = 8 dB, 10 MHz carrier spacing
-55
-50
-45
-40
-35
-30
-25
34 36 38 40 42 44 46 48
Average Output Power (dBm)
IM3 (dBc), ACPR (dBc)
0
5
10
15
20
25
30
Drain Efficiency (%)
ACPR
Efficiency
IM3
RF Characteristics
WCDMA Measurements (tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 1.2 A, P
OUT
= 35 W average
f
1
= 2135 MHz, f
2
= 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF
Characteristic Symbol Min Typ Max Unit
Gain G
ps
14.5 15.5 — dB
Drain Efficiency η
D
26 27.5 — %
Intermodulation Distortion IMD — –36 –34 dBc
PTFA211801F
Package 31260
Features
• Broadband internal matching
• Typical two-carrier WCDMA performance at 2140
MHz, 28 V
- Average output power = 45.5 dBm
- Linear Gain = 15.5 dB
- Efficiency = 27.5%
- Intermodulation distortion = –36 dBc
- Adjacent channel power = –41 dBc
• Typical CW performance, 2170 MHz, 30 V
- Output power at P–1dB = 180 W
- Efficiency = 52%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
150 W (CW) output power
PTFA211801E
PTFA211801F
Data Sheet 2 of 11 Rev. 03, 2005-06-10
RF Characteristics (cont.)
CW Measurements (tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 1.2 A, P
OUT
= 150 W average, f
= 2170 MHz
Characteristic Symbol Min Typ Max Unit
Gain Compression G
comp
— 0.5 1.0 dB
Two-Tone Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 1.2 A, P
OUT
= 140 W PEP, f = 2140 MHz, tone spacing = 1 MHz
Characteristic Symbol Min Typ Max Unit
Gain G
ps
— 15.5 — dB
Drain Efficiency η
D
— 38.5 — %
Intermodulation Distortion IMD — –28 — dBc
DC Characteristics
Characteristic Conditions Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage V
GS
= 0 V, I
DS
= 10 mA V
(BR)DSS
65 — — V
Drain Leakage Current V
DS
= 28 V, V
GS
= 0 V I
DSS
— — 1.0 µA
Drain Leakage Current V
DS
= 63 V, V
GS
= 0 V I
DSS
— — 10.0 µA
On-State Resistance V
GS
= 10 V, V
DS
= 0.1 V R
DS(on)
— 0.05 — Ω
Operating Gate Voltage V
DS
= 28 V, I
DQ
= 1.2 A V
GS
2.0 2.5 3.0 V
Gate Leakage Current V
GS
= 10 V, V
DS
= 0 V I
GSS
— — 1.0 µA
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage V
DSS
65 V
Gate-Source Voltage V
GS
–0.5 to +12 V
Junction Temperature T
J
200 °C
Total Device Dissipation P
D
565 W
Above 25°C derate by 3.23 W/°C
Storage Temperature Range T
STG
–40 to +150 °C
Thermal Resistance (T
CASE
= 70°C, 150 W CW) R
θJC
0.31 °C/W
PTFA211801E
PTFA211801F
Data Sheet 3 of 11 Rev. 03, 2005-06-10
Two-carrier WCDMA at Various Biases
-55
-50
-45
-40
-35
-30
34 36 38 40 42 44 46 48
Output Power, Avg. (dBm)
3rd Order IMD (dBc)
1.2 A
1.4 A
1.1 A
1.3 A
V
DD
= 28 V, f = 2140 MHz, 3GPP WCDMA signal,
P/AR = 8 dB, 10 MHz carrier spacing, series show I
DQ
Broadband Performance
V
DD
= 28 V, I
DQ
= 1.2 A, P
OUT
= 45.0 dBm CW
5
10
15
20
25
30
2070 2090 2110 2130 2150 2170 2190 2210
Frequency (MHz)
Gain (dB), Efficiency (%)
-30
-25
-20
-15
-10
-5
Input Return Loss (dB)
Gain
Efficiency
Return
Loss
Ordering Information
Type Package Outline Package Description Marking
PTFA211801E 30260 Thermally-enhanced slotted flange, single-ended PTFA211801E
PTFA211801F 31260 Thermally-enhanced earless flange, single-ended PTFA211801F
Typical Performance (data taken in a production test fixture)
P1-P3P4-P6P7-P9P10-P11

PTFA211801F V4 R250

Mfr. #:
Buy PTFA211801F V4 R250
Manufacturer:
Infineon Technologies
Description:
RF MOSFET Transistors Hi Pwr RF LDMOS FET 180 W 2110-2170 MHz
Lifecycle:
New from this manufacturer.
Delivery:
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