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PTFA211801F V4 R250

P1-P3P4-P6P7-P9P10-P11
PTFA211801E
PTFA211801F
Data Sheet 4 of 11 Rev. 03, 2005-06-10
2-Tone Drive-up
V
DD
= 28 V, I
DQ
= 1.2 A,
f = 2140 MHz, tone spacing = 1 MHz
-65
-60
-55
-50
-45
-40
-35
-30
-25
-20
38 42 46 50 54
Output Power, PEP (dBm)
0
5
10
15
20
25
30
35
40
45
Drain Efficiency (%)
Intermodulation Distortion (dBc)
IM5
IM7
IM3
Efficiency
Typical Performance (cont.)
Intermodulation Distortion Products
vs. Tone Spacing
V
DD
= 28 V I
DQ
= 1.2 A, f = 2140 MHz,
P
OUT
= 51 dBm PEP
-55
-50
-45
-40
-35
-30
-25
-20
0 5 10 15 20 25 30 35 40
Tone Spacing (MHz)
Intermodulation Distortion (dBc)
3rd Order
5th
7th
Power Sweep, CW Conditions
V
DD
= 28 V, I
DQ
= 1.2 A, f = 2170 MHz
13
14
15
16
17
0 20 40 60 80 100 120 140 160 180
Output Power (W)
Gain (dB)
8
21
34
47
60
Drain Efficiency (%)
Gain
Efficiency
T
CASE
= 25°C
T
CASE
= 90°C
Power Sweep, CW Conditions
V
DD
= 30 V, I
DQ
= 1.2 A, f = 2170 MHz
12
13
14
15
16
17
18
0 20 40 60 80 100 120 140 160 180
Output Power (W)
Gain (dB)
0
10
20
30
40
50
60
Gain
Efficiency
PTFA211801E
PTFA211801F
Data Sheet 5 of 11 Rev. 03, 2005-06-10
Single-carrier WCDMA Drive-up
V
DD
= 28 V, I
DQ
= 1.2 A, f = 2140 MHz,
P/A R = 8.5 dB, 3.84 MHz BW
-50
-45
-40
-35
-30
34 36 38 40 42 44 46 48
Average Output Power (dBm)
0
5
10
15
20
25
30
35
Drain Efficiency (%), Gain (dB)
Adjacent Channel Power Ratio (dB)
Efficiency
Gain
ACPR Up
ACPR Low
Typical Performance (cont.)
Voltage Sweep
-45
-40
-35
-30
-25
-20
-15
-10
23 24 25 26 27 28 29 30 31 32 33
Supply Voltage (V)
3rd Order Intermodulation Distortion (dBc)
10
15
20
25
30
35
40
45
I
DQ
= 1.2 A, f = 2140 MHz, P
OUT
= 51 dBm PEP,
tone spacing = 1 MHz
Gain
Efficiency
IM3 Up
Gain (dB), Drain Efficiency (%)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
0.95
0.96
0.97
0.98
0.99
1.00
1.01
1.02
1.03
-20 0 20 40 60 80 100
Case Temperature (°C)
Normalized Bias Voltage (V)
0.3 A
0.9 A
1.5 A
2.3 A
4.5 A
6.8 A
9.0 A
11.3 A
13.5 A
PTFA211801E
PTFA211801F
Data Sheet 6 of 11 Rev. 03, 2005-06-10
Z Source Z Load
G
S
D
Frequency Z Source Ω Z Load Ω
MHz R jX R jX
2070 7.2 –0.5 1.5 2.3
2110 7.8 –0.2 1.4 2.6
2140 8.4 –0.0 1.4 2.8
2170 9.1 0.0 1.4 3.0
2210 10.0 –0.2 1.3 3.4
See next page for Reference Circuit information
0.1
0.3
0.2
0
.
1
0
.
0
.
1
N
E
R
A
T
O
R
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
L
O
A
D
-
0
.
0
Z Load
Z Source
2210 MHz
2210 MHz
2070 MHz
2070 MHz
Z
0
= 50 Ω
Broadband Circuit Impedance
P1-P3P4-P6P7-P9P10-P11

PTFA211801F V4 R250

Mfr. #:
Buy PTFA211801F V4 R250
Manufacturer:
Infineon Technologies
Description:
RF MOSFET Transistors Hi Pwr RF LDMOS FET 180 W 2110-2170 MHz
Lifecycle:
New from this manufacturer.
Delivery:
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