STW55NM50N Electrical ratings
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1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source voltage (V
GS
= 0) 500 V
V
GS
Gate- source voltage ±25 V
I
D
Drain current (continuous) at T
C
= 25 °C 54 A
I
D
Drain current (continuous) at T
C
= 100 °C 35 A
I
DM
(1)
1. Pulse width limited by safe operating area
Drain current (pulsed) 216 A
P
TOT
Total dissipation at T
C
= 25 °C 350 W
dv/dt
(2)
2. I
SD
≤ 54 A, di/dt ≤ 400 A/µs, V
DD
=80% V
(BR)DSS
Peak diode recovery voltage slope 15 V/ns
T
stg
Storage temperature –55 to 150 °C
T
j
Max. operating junction temperature 150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case max 0.36 °C/W
Rthj-amb Thermal resistance junction-ambient max 50 °C/W
T
l
Maximum lead temperature for soldering
purpose
300 °C
Table 4. Avalanche characteristics
Symbol Parameter Value Unit
I
AS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
15 A
E
AS
Single pulse avalanche energy
(starting Tj=25 °C, I
D
=I
AS
, V
DD
=50 V)
1600 mJ
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