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STW55NM50N

P1-P3P4-P6P7-P9P10-P12
STW55NM50N Electrical characteristics
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Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
Figure 10. Normalized gate threshold voltage
vs temperature
Figure 11. Normalized on resistance vs
temperature
Figure 12. Normalized BV
DSS
vs temperature Figure 13. Source-drain diode forward
characteristics
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Test circuits STW55NM50N
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3 Test circuits
Figure 14. Switching times test circuit for
resistive load
Figure 15. Gate charge test circuit
Figure 16. Test circuit for inductive load
switching and diode recovery times
Figure 17. Unclamped Inductive load test
circuit
Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform
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STW55NM50N Package mechanical data
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4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
Obsolete Product(s) - Obsolete Product(s)
P1-P3P4-P6P7-P9P10-P12

STW55NM50N

Mfr. #:
Buy STW55NM50N
Manufacturer:
STMicroelectronics
Description:
MOSFET N-channel 500V, 54 A Power II Mdmesh
Lifecycle:
New from this manufacturer.
Delivery:
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