Electrical characteristics STW55NM50N
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2 Electrical characteristics
(T
CASE
=25 °C unless otherwise specified)
Table 5. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
breakdown voltage
I
D
= 1 mA, V
GS
= 0 500 V
dv/dt
(1)
1. Characteristic value at turn off on inductive load
Drain source voltage slope
V
DD
=400 V, I
D
= 54 A,
V
GS
=10 V
30 V/ns
I
DSS
Zero gate voltage
drain current (V
GS
= 0)
V
DS
= Max rating
V
DS
= Max rating, @125 °C
1
100
µA
µA
I
GSS
Gate-body leakage
current (V
DS
= 0)
V
GS
= ± 20 V 100 nA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 µA 2 3 4 V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10 V, I
D
= 27 A 0.040 0.054 Ω
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
g
fs
(1)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Forward transconductance V
DS
=15 V
,
I
D
= 27 A 42 S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
= 50 V, f = 1 MHz,
V
GS
= 0
5800
370
30
pF
pF
pF
C
oss eq.
(2)
2. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DS
Equivalent output
capacitance
V
GS
= 0V, V
DS
= 0V to 400V 750 pF
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 400 V, I
D
= 54 A,
V
GS
= 10 V
(see Figure 15)
180
23
90
nC
nC
nC
R
g
Gate input resistance
f=1 MHz Gate DC Bias=0
Test signal level = 20 mV
open drain
2 Ω
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