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Table 4. ELECTRICAL CHARACTERISTICS 4.5 V < Vcc < 5.25 V, 8 V < Vs < 18 V, −40°C < Tj < 150°C; unless otherwise noted.
Symbol UnitMaxTypMinTest ConditionsParameter
ELECTROCHROMIC MIRROR CONTROL (ECFB, ECON) (NCV7714 ONLY)
Ron_ecfb
On−resistance to GND, LS switch
Tj = 25°C, Iecfb = 0.5 A 1.6
W
Tj = 125°C, Iecfb = 0.5 A 3
W
Ilim_ecfb_src Output current limitation to GND Vs = 13.5V, Vcc = 5 V 0.75 1.25 A
Vlim_ecfb Vds voltage limitation Output enabled 2 3 V
Iuld_ecfb Underload detection threshold Vs = 13.5 V, Vcc = 5 V 10 20 35 mA
td_ecfb(on) Output delay time, LS Driver on
Vs = 13.5 V, Vcc = 5 V,
Rload = 64 W,
V(ECFB) = 0.9·VS / 0.1·VS (on /off)
1 12
ms
td_ecfb(off) Output delay time, LS Driver off 2 12
ms
Ileak_ecfb_stdby
Output leakage current, LS off
Vecfb = Vs, Standby mode −15 15
mA
Ileak_ecfb_act Vecfb = Vs, Active mode −10 10
mA
td_uld_ecfb Underload blanking delay 430 610
ms
tdb_old_ecfb Overload shutdown blanking delay Timer started after output activation 30 48
ms
td_old_ecfb Overload shutdown blanking delay Timer started after blanking delay
elapsed
16 50
ms
dVecfb/dt(on/off) Slew rate of ECFB, LS switch
Vs = 13.5 V, Vcc = 5 V, Rload = 64 W
5
V/ms
Vctrl_max Maximum EC control voltage
CONTROL_2.FSR = 1 1.4 1.6 V
CONTROL_2.FSR = 0 1.12 1.28 V
DNL Differential non linearity 1 LSB = 23.8 mV −1 1 LSB
dV_ecfb Voltage deviation between target
and ECFB
dV_ecfb = Vtarget – Vecfb,
Iecon < 1 mA
gain
offset
−5%
−1 LSB
+5%
+1 LSB
mV
dV_ecfb_lo Difference voltage between target
and ECFB sets flag if Vecfb is
below target
dV_ecfb = Vtarget – Vecfb,
Toggle bit STATUS_2.ECLO = 1
120 mV
dV_ecfb_hi Difference voltage between target
and ECFB sets flag if Vecfb is
above target
dV_ecfb = Vtarget – Vecfb,
Toggle bit STATUS_2.ECHI = 1
−120 mV
Vecon_min_hi
ECON output voltage range
Iecon = −10 mA
4.5 5.5 V
Vecon_max_lo
Iecon = 10 mA
0 0.7 V
Iecon ECON output current capability
Vtarget > Vecfb + 500 mV,
Vecon = 3.5 V
−100 −10
mA
Vtarget < Vecfb – 500 mV,
Vecon = 0.5 V, Vtarget = 1 LSB,
Vecfb = 0.5 V
10 100
mA
Recon_pd Pull−down resistance at ECON in
fast discharge mode
Vecon = 0.7 V,
CONTROL_1.ECEN = 1,
CONTROL_1.LSECFB = 1,
CONTROL_1.DAC[5:0] = 0
5
kW
Iq_econ ECON quiescent current Vecon = Vs,
CONTROL_1.ECEN = 0
1
mA
t_disc Auto−discharge pulse width Config.LSPWM=1 230 300 360 ms
t_rec Auto−discharge blanking time Config.LSPWM=1 2.25 3 3.75 ms
Vthdisc_abs PWM discharge threshold level
V(ECON) (Note 5)
Config.LSPWM=1 350 400 450 mV
Vthdisc_diff PWM discharge threshold level
V(ECON) – V(ECFB) (Note 5)
Config.LSPWM=1 −50 0 50 mV
5. If V(ECON) < Vthdisc_abs or V(ECON)−V(ECFB) < Vthdisc_diff then ECON_LOW =1; see description in paragraph Controller for Electro−
chromic Glass
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11
Table 4. ELECTRICAL CHARACTERISTICS 4.5 V < Vcc < 5.25 V, 8 V < Vs < 18 V, −40°C < Tj < 150°C; unless otherwise noted.
Symbol UnitMaxTypMinTest ConditionsParameter
CURRENT SENSE MONITOR OUTPUT ISOUT/PWM2
Vis
Current Sense output functional
voltage range
Vcc = 5 V, Vs = 8−20 V 0 Vcc –
0.5
V
Kis
(Note 6)
Current Sense output ratio OUT7
and 4 (low on−resistance bulb
mode)
K = Iout / Iis,
0 V v Vis v 4.5 V, Vcc = 5 V
10000
Current Sense output ratio OUT5/6
and 4 (high on−resistance LED
mode)
2000
Iis,acc
(Notes 7, 8)
Current Sense output accuracy
OUT4 (low on−resistance bulb
mode)
0.3 V v Vis v 4.5 V, Vcc = 5 V
Iout4 = 0.5−1.3 A
−2% −
6% FS
23% −
4% FS
Current Sense output accuracy
OUT4 (high on−resistance LED
mode)
0.3 V v Vis v 4.5 V, Vcc = 5 V
Iout4 = 0.1−0.28 A
−6% −
4% FS
21% −
4% FS
Current Sense output accuracy
OUT5/6
0.3 V v Vis v 4.5 V, Vcc = 5 V
Iout5/6 = 0.1−0.4 A
−3% −
6% FS
17% −
3% FS
Current Sense output accuracy
OUT7
0.3 V v Vis v 4.5 V, Vcc = 5 V
Iout7 = 0.5−5.9 A
−7% −
5% FS
12% −
1% FS
tis_blank Current Sense blanking time 50 65
ms
tis Current Sense settling time 0 V to FSR (full scale range) 230 264
ms
6. Kis trimmed at 150°C to higher value of spec range to be more centered over temp range.
7. Current sense output accuracy = Isout−Isout_ideal relative to Isout_ideal
8. FS (Full scale) = Ioutmax/Kis
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12
Table 4. ELECTRICAL CHARACTERISTICS 4.5 V < Vcc < 5.25 V, 8 V < Vs < 18 V, −40°C < Tj < 150°C; unless otherwise noted.
Symbol UnitMaxTypMinTest ConditionsParameter
DIGITAL INPUTS CSB, SCLK, PWM1/2, SI
Vinl
Input low level Vcc = 5 V
0.3·Vcc
V
Vinh Input high level Vcc = 5 V
0.7·Vcc
V
Vin_hyst Input hysteresis 500 mV
Rcsb_pu CSB pull−up resistor Vcc = 5 V,
0 V < Vcsb < 0.7·Vcc
30 120 250
kW
Rsclk_pd SCLK pull−down resistor Vcc = 5 V,
Vsclk = 1.5 V
30 60 220
kW
Rsi_pd SI pull−down resistor Vcc = 5 V,
Vsi = 1.5 V
30 60 220
kW
Rpwm1_pd PWM1 pull−down resistor Vcc = 5 V,
Vpwm1 = 1.5 V
30 60 220
kW
Rpwm2_pd PWM2 pull−down resistor Vcc = 5 V,
Vpwm2 = 1.5 V,
current sense disabled
30 60 220
kW
Ileak_isout Output leakage current current sense enabled −2 2
mA
Ccsb/sclk/pwm1/2 Pin capacitance 0 V < Vcc < 5.25 V (Note 9) 10 pF
DIGITAL INPUTS CSB, SCLK, SI; TIMING
tsclk
Clock period Vcc = 5 V 1000 ns
tsclk_h Clock high time 115 ns
tsclk_l Clock low time 115 ns
tset_csb CSB setup time, CSB low before
rising edge of SCLK
400 ns
tset_sclk SCLK setup time, SCLK low
before rising edge of CSB
400 ns
tset_si SI setup time 200 ns
thold_si SI hold time 200 ns
tr_in Rise time of input signal SI, SCLK,
CSB
100 ns
tf_in Fall time of input signal SI, SCLK,
CSB
100 ns
tcsb_hi_stdby Minimum CSB high time, switching
from Standby mode
Transfer of SPI−command to input
register, valid before tsact mode
transition delay expires
5 10
ms
tcsb_hi_min Minimum CSB high time,
Active mode
2 4
ms
9. Values based on design and/or characterization

NCV7704DQR2G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Display Drivers & Controllers MIRROR DRIVER LOW CONTENT
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