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Document Number: 70071
S-71241–Rev. H, 25-Jun-07
Vishay Siliconix
DG884
SPECIFICATIONS
a
Parameter Symbol
Test Conditions
Unless Specified
V+ = 15 V, V- = - 3 V
V
L
= 5 V, RS = 2.0 V
SALVO
, CS, WR, I/O = 0.8 V Temp
b
Typ
c
A Suffix
- 55 to 125 °C
D Suffix
- 40 to 85 °C Unit
Min
d
Max
d
Min
d
Max
d
Unit
Analog Switch
Analog Signal Range
e
V
ANALOG
V- = - 5 V Full - 5 8 - 5 8 V
Drain-Source
On-Resistance
r
DS(on)
I
S
= - 10 mA, V
D
= 0 V
V
AIH
= 2.0 V, V
AIL
= 0.8 V
Sequence Each Switch On
Room
Full
45 90
120
90
120
Ω
Resistance Match
Between Channels
Δr
DS(on)
Room 3 9 9
Source Off Leakage Current
I
S(off)
V
S
= 8 V, V
D
= 0 V, RS = 0.8 V
Room
Full
- 20
- 200
20
200
- 20
- 200
20
200
nADrain Off Leakage Current
I
D(off)
V
D
= 0 V, V
S
= 8 V, RS = 0.8 V
Room
Full
- 20
- 200
20
200
- 20
- 200
20
200
Total Switch On
Leakage Current
I
D(on)
V
S
= V
D
= 8 V
Room
Full
- 20
- 2000
20
2000
- 20
- 200
20
200
Digital Input/Output
Input Voltage High
V
AIH
Full 2 2
V
Input Voltage Low
V
AIL
Full 0.8 0.8
Address Input Current
I
AI
V
AI
= 0 V or 2 V or 5 V
Room
Full
0.1 - 1
- 10
1
10
- 1
- 10
1
10
µA
Address Output Current
I
AO
V
AO
= 2.7 V, See Truth Table
Room - 600 - 200 - 200
V
AO
= 0.4 V, See Truth Table
Room 1500 500 500
DIS Pin Sink Current
I
DIS
Room 1.5 mA
Dynamic Characteristics
On State Input Capacitance
e
C
S(on)
1 In to 1 Out, See Figure 11 Room 30 40
pF
1 In to 4 Out, See Figure 11 Room 120 160
Off State Input Capacitance
e
C
S(off)
See Figure 11
Room 8 20 20
Off State Output
Capacitance
e
C
D(off)
Room 10 20 20
Transition Time
t
TRANS
See Figure 5
Room 300
ns
Break-Before-Make Interval
t
OPEN
Full 10 10
SALVO
, WR Tu r n O n T i m e
t
ON
R
L
= 1 kΩ, C
L
= 35 pF
50 % Control to 90 % Output
See Figure 3
Room
Full
300
500
300
SALVO
, WR Turn Off Time
t
OFF
Room
Full
175
300
175
Charge Injection Q See Figure 6 Room - 100 pC
Matrix Disabled Crosstalk
X
TALK(DIS)
R
IN
= R
L
= 75 Ω
f = 5 MHz, See Figure 10
Room - 82
dBAdjacent Input Crosstalk
X
TA LK(AI)
R
IN
= 10 Ω, R
L
= 10 kΩ
f = 5 MHz, See Figure 9
Room - 85
All Hostile Crosstalk
X
TA LK(AH)
R
IN
= 10 Ω, R
L
= 10 kΩ
f = 5 MHz, See Figure 8
Room - 66
Bandwidth BW
R
L
= 50 Ω, See Figure 7
Room 300 MHz
Document Number: 70071
S-71241–Rev. H, 25-Jun-07
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5
Vishay Siliconix
DG884
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS
a
Parameter Symbol
Test Conditions
Unless Specified
V+ = 15 V, V- = - 3 V
V
L
= 5 V, RS = 2.0 V
SALVO
, CS, WR, I/O = 0.8 V Temp
b
Typ
c
A Suffix
- 55 to 125 °C
D Suffix
- 40 to 85 °C Unit
Min
d
Max
d
Min
d
Max
d
Unit
Power Supplies
Positive Supply Current I+
All Inputs at GND or 2 V
RS
= 2 V
Room
Full
1.5 3
6
3
6
mA
Negative Supply Current I-
Room
Full
- 1.5 - 3
- 5
- 3
- 5
Digital GND
Supply Current
I
DG
Full - 275 - 750 - 750
μA
Logic Supply Current
I
L
Full 200 500 500
Functional Operating
Supply Voltage Range
e
V+ to V-
See Operating Voltage Range
(Typical Characteristics) page 6
Full 13 20 13 20
VV- to GND Full - 5.5 0 - 5.5 0
V+ to GND Full 10 20 10 20
Minimum Input Timing Requirements
Address Write Time
t
AW
See Figure 1
Full 20 50 50
ns
Minimum WR
Pulse
Width
t
WP
Full 50 100 100
Write Address Time
t
WA
Full - 10 10 10
Chip Select Write Time
t
CW
Full 50 100 100
Write Chip Select Time
t
WC
Full 25 75 75
Minimum SALVO
Pulse Width
t
SP
Full 50 100 100
SALVO
Write Time
t
SW
Full - 10 10 10
Write SALVO
Time
t
WS
Room 20 50
Input Output Time
t
IO
Room 150 200 200
Address Output Time
t
AO
Room 150 200 200
Chip Select Output Time
t
CO
Room 150 200 200
Chip Select Address Time
t
CA
Room 60 100
Reset to SALVO
t
RS
Full 50 50
I/O Address Input Time
t
IA
Room 50
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Document Number: 70071
S-71241–Rev. H, 25-Jun-07
Vishay Siliconix
DG884
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Adjacent Input Crosstalk
All Hostile Crosstalk
f - Frequency (MHz)
( dB)
TALK(AI)
X
1 10 100
120
100
20
80
60
40
f – Frequency (MHz)
( dB)
TALK(AH)
X
1 10 100
100
80
0
60
40
20
Matrix Disabled Crosstalk
Operating Voltage Area
f - Frequency (MHz)
( dB)
TALK(DIS)
X
1 10 100
120
100
20
80
60
40
V- – Negative Supply (V)
V+ Positive Supply (V)
21
19
17
15
13
11
9
0 - 1 - 2 - 3 - 4 - 5 - 6
Operating Voltage Area

DG884DN

Mfr. #:
Manufacturer:
Vishay / Siliconix
Description:
Analog & Digital Crosspoint ICs RECOMMENDED ALT 78-DG4051EEN-T1-GE4
Lifecycle:
New from this manufacturer.
Delivery:
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