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IRF8010STRLPBF

P1-P3P4-P6P7-P9P10-P11
Notes through are on page 8
www.irf.com 1
06/21/04
IRF8010SPbF
IRF8010LPbF
SMPS MOSFET
HEXFET
®
Power MOSFET
V
DSS
R
DS(on)
max I
D
100V 15mΩ 80A
PD - 95433
Applications
l High frequency DC-DC converters
l UPS and Motor Control
l Lead-Free
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
l Typical R
DS(on)
= 12mΩ
D
2
Pak
IRF8010S
TO-262
IRF8010L
Absolute Maximum Ratings
Parameter Units
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V
A
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C
Power Dissipation W
Linear Derating Factor W/°C
V
GS
Gate-to-Source Voltage V
dv/dt
Peak Diode Recovery dv/dt
V/ns
T
J
Operating Junction and
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 0.57
R
θJC
Junction-to-Case (end of life)
––– 0.80 °C/W
R
θCS
Case-to-Sink, Flat, Greased Surface 0.50 –––
R
θJA
Junction-to-Ambient (PCB Mount, steady state)
––– 40
16
-55 to + 175
300 (1.6mm from case )
Max.
80
57
320
260
1.8
± 20
IRF8010S/LPbF
2 www.irf.com
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage 100 ––– ––– V
∆
V
(BR)DSS
/
∆
T
J
Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 12 15
m
Ω
V
GS(th)
Gate Threshold Voltage 2.0 ––– 4.0 V
I
DSS
Drain-to-Source Leakage Current ––– ––– 20 µA
––– ––– 250
I
GSS
Gate-to-Source Forward Leakage ––– ––– 200 nA
Gate-to-Source Reverse Leakage ––– ––– -200
Dynamic @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
gfs Forward Transconductance 82 ––– ––– V
Q
g
Total Gate Charge ––– 81 120
Q
gs
Gate-to-Source Charge ––– 22 ––– nC
Q
gd
Gate-to-Drain ("Miller") Charge ––– 26 –––
t
d(on)
Turn-On Delay Time ––– 15 –––
t
r
Rise Time ––– 130 –––
t
d(off)
Turn-Off Delay Time ––– 61 ––– ns
t
f
Fall Time ––– 120 –––
C
iss
Input Capacitance ––– 3830 –––
C
oss
Output Capacitance ––– 480 –––
C
rss
Reverse Transfer Capacitance ––– 59 ––– pF
C
oss
Output Capacitance ––– 3830 –––
C
oss
Output Capacitance ––– 280 –––
C
oss
eff.
Effective Output Capacitance ––– 530 –––
Avalanche Characteristics
Parameter Units
E
AS
Single Pulse Avalanche Energy
mJ
I
AR
Avalanche Current
A
E
AR
Repetitive Avalanche Energy
mJ
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current ––– ––– 80
(Body Diode) A
I
SM
Pulsed Source Current ––– ––– 320
(Body Diode)
V
SD
Diode Forward Voltage ––– ––– 1.3 V
t
rr
Reverse Recovery Time ––– 99 150 ns
Q
rr
Reverse RecoveryCharge ––– 460 700 nC
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
V
GS
= 20V
V
GS
= -20V
Max.
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MH
z
V
GS
= 0V, V
DS
= 80V, ƒ = 1.0MH
z
V
GS
= 0V, V
DS
= 0V to 80V
V
GS
= 10V
V
DD
= 50V
I
D
= 80A
R
G
= 39
Ω
T
J
= 25°C, I
S
= 80A, V
GS
= 0V
T
J
= 150°C, I
F
= 80A, V
DD
= 50V
di/dt = 100A/µs
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 45A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 100V, V
GS
= 0V
V
DS
= 100V, V
GS
= 0V, T
J
= 125°C
MOSFET symbol
showing the
integral reverse
p-n junction diode.
Conditions
26
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz
310
45
Conditions
V
DS
= 25V, I
D
= 45A
I
D
= 80A
V
DS
= 80V
Typ.
–––
–––
–––
IRF8010S/LPbF
www.irf.com 3
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
80A
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
10000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
4.0V
20µs PULSE WIDTH
Tj = 25°C
VGS
TOP 15V
12V
10V
6.0V
5.5V
5.0V
4.5V
BOTTOM 4.0V
0.1 1 10 100
V
DS
, Drain-to-Source Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
4.0V
20µs PULSE WIDTH
Tj = 175°C
VGS
TOP 15V
12V
10V
6.0V
5.5V
5.0V
4.5V
BOTTOM 4.0V
2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0
V
GS
, Gate-to-Source Voltage (V)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
Α
)
T
J
= 25°C
T
J
= 175°C
V
DS
= 50V
20µs PULSE WIDTH
P1-P3P4-P6P7-P9P10-P11

IRF8010STRLPBF

Mfr. #:
Buy IRF8010STRLPBF
Manufacturer:
Infineon / IR
Description:
MOSFET MOSFT 100V 80A 15mOhm 81nC
Lifecycle:
New from this manufacturer.
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