IRF8010STRLPBF

P1-P3 P4-P6 P7-P9 P10-P11

IRF8010S/LPbF

4 www.irf.com

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

0.1

1

10

100

1000

0.0 0.5 1.0 1.5 2.0

V ,Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

SD

SD

V = 0 V

GS

T = 175 C

J

°

T = 25 C

J

°

1 10 100

V

DS

, Drain-to-Source Voltage (V)

10

100

1000

10000

100000

C

,

C

a

p

a

c

i

t

a

n

c

e

(

p

F

)

V

GS

= 0V, f = 1 MHZ

C

iss

= C

gs

+ C

gd

, C

ds

SHORTED

C

rss

= C

gd

C

oss

= C

ds

+ C

gd

C

oss

C

rss

C

iss

1 10 100 1000

V

DS

, Drain-to-Source Voltage (V)

0.1

1

10

100

1000

10000

I

D

,

D

r

a

i

n

-

t

o

-

S

o

u

r

c

e

C

u

r

r

e

n

t

(

A

)

Tc = 25°C

Tj = 175°C

Single Pulse

1msec

10msec

OPERATION IN THIS AREA

LIMITED BY R

DS

(on)

100µsec

0 20406080100

Q

G

Total Gate Charge (nC)

0

2

4

6

8

10

12

V

G

S

,

G

a

t

e

-

t

o

-

S

o

u

r

c

e

V

o

l

t

a

g

e

(

V

)

V

DS

= 80V

V

DS

= 50V

V

DS

= 20V

I

D

= 80A

IRF8010S/LPbF

www.irf.com 5

Fig 10a. Switching Time Test Circuit

V

DS

9

0%

1

0%

V

GS

t

d(on)

t

r

t

d(off)

t

f

Fig 10b. Switching Time Waveforms

V

DS

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

R

D

V

GS

R

G

D.U.T.

10V

+

-

V

DD

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current Vs.

Case Temperature

25 50 75 100 125 150 175

0

20

40

60

80

T , Case Temperature ( C)

I , Drain Current (A)

°

C

D

LIMITED BY PACKAGE

0.01

0.1

1

10

0.00001 0.0001 0.001 0.01 0.1 1

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

J DM thJC C

P

t

t

DM

1

2

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

1

thJC

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

IRF8010S/LPbF

6 www.irf.com

Q

G

Q

GS

Q

GD

V

G

Charge

D.U.T.

V

D

S

I

D

I

G

3mA

V

GS

.3µF

50KΩ

.2µF

12V

Current Regulator

Same Type as D.U.T.

Current Sampling Resistors

+

-

10 V

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

t

p

V

(BR)DSS

I

AS

R

G

I

AS

0.01

Ω

t

p

D.U.T

L

V

DS

+

-

V

DD

DRIVER

A

15V

20V

25 50 75 100 125 150 175

0

100

200

300

400

500

600

E , Single Pulse Avalanche Energy (mJ)

AS

I

D

TOP

BOTTOM

18A

32A

45A

Starting Tj, Junction Temperature (°C)

P1-P3 P4-P6 P7-P9 P10-P11

IRF8010STRLPBF

Mfr. #:

Buy IRF8010STRLPBF

Manufacturer:

Infineon / IR

Description:

MOSFET MOSFT 100V 80A 15mOhm 81nC

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet