IRF8010STRLPBF

IRF8010S/LPbF
www.irf.com 7
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple 5%
Body Diode Forward Drop
R
e-Applied
V
oltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P. W .
Period
+
-
+
+
+
-
-
-
Fig 14. For N-Channel HEXFET
®
Power MOSFETs
* V
GS
= 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
R
G
V
DD
dv/dt controlled by R
G
Driver same type as D.U.T.
I
SD
controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
*
IRF8010S/LPbF
8 www.irf.com
D
2
Pak Part Marking Information
D
2
Pak Package Outline
Dimensions are shown in millimeters (inches)
Note: "P" in ass embly line
pos ition indi cates "Lead-F ree"
F530S
THIS IS AN IRF530S WITH
LOT CODE 8024
ASSEMBLED ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
ASSEMBLY
LOT CODE
INTERNATIONAL
RECTIFIER
LOGO
PART NUMBE
R
DATE CODE
YEAR 0 = 2000
WEEK 02
LINE L
OR
F530S
A = AS S E MB L Y S IT E CODE
WE EK 02
P = DE SIGNAT ES LEAD-FRE E
PRODUCT (OPTIONAL)
RECTIFIER
INTERNATIONAL
LOGO
LOT CODE
AS SE MB L Y
YEAR 0 = 2000
DATE CODE
PART NUMBER
IRF8010S/LPbF
www.irf.com 9
TO-262 Part Marking Information
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
ASSEMBLY
LOT CODE
RECTIFIER
INTERNATIONAL
ASSEMBLED ON WW 19, 1997
Note: "P" in as sembly line
pos ition indicates "L ead-F ree"
IN THE ASSEMBLY LINE "C"
LOGO
THIS IS AN IRL3103L
LOT CODE 1789
EXAMPLE:
LINE C
DATE CODE
WEEK 19
YEAR 7 = 1997
PART NUMBER
PART NUMBER
LOGO
LOT CODE
ASSEMBLY
INTERNATIONAL
RECTIFIER
PRODUCT (OPTIONAL)
P = DESIGNATES LEAD-FREE
A = ASSEMBLY SITE CODE
WEEK 19
YEAR 7 = 1997
DATE CODE
OR

IRF8010STRLPBF

Mfr. #:
Manufacturer:
Infineon / IR
Description:
MOSFET MOSFT 100V 80A 15mOhm 81nC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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