VS-100MT060WSP
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Vishay Semiconductors
Revision: 10-Jun-15
2
Document Number: 95708
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Notes
• Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur.
(1)
V
CC
= 400 V, V
GE
= 15 V, L = 500 μH, R
g
= 4.7 , T
J
= 150 °C
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
PFC Diode
Repetitive peak reverse voltage V
RRM
600 V
Maximum continuous forward current
T
J
= 150 °C maximum
I
F
T
C
= 25 °C 121
A
T
C
= 80 °C 79
Maximum power dissipation P
D
T
C
= 25 °C 154 W
Maximum non-repetitive peak current I
FSM
10 ms sine or 6 ms rectangular
pulse, T
J
= 25 °C
480 A
AP Diode
Repetitive peak reverse voltage V
RRM
600 V
Maximum continuous forward current
T
J
= 150 °C maximum
I
F
T
C
= 25 °C 17
A
T
C
= 80 °C 11
Maximum power dissipation P
D
T
C
= 25 °C 24 W
Maximum non-repetitive peak current I
FSM
10 ms sine or 6 ms rectangular
pulse, T
J
= 25 °C
60 A
Maximum operating junction temperature T
J
150
°C
Storage temperature range T
Stg
-40 to +150
RMS isolation voltage V
ISOL
T
J
= 25 °C, all terminals shorted,
f = 50 Hz, t = 1 s
3500 W
R CONDUCTION PER JUNCTION - INPUT RECTIFIER BRIDGE
DEVICES
SINE HALF WAVE CONDUCTION RECTANGULAR WAVE CONDUCTION
UNITS
180° 120° 90° 60° 30° 180° 120° 90° 60° 30°
100MT060WSP 0.396 0.454 0.563 0.763 1.099 0.290 0.471 0.599 0.782 1.107 °C/W
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Input Rectifier
Bridge
(per diode)
Blocking voltage BV
RRM
I
R
= 100 μA 1200 - - V
Reverse leakage current I
RRM
V
RRM
= 1200 V - 0.0015 0.13
mA
V
RRM
= 1200 V, T
J
= 150 °C - 1.0 -
Forward voltage drop V
FM
I
F
= 70 A - 1.31 1.45
V
I
F
= 70 A, T
J
= 150 °C - 1.34 -
Forward slope resistance rt
T
J
= 150 °C
- - 8.92 m
Conduction threshold voltage V
T
- - 0.83 V
PFC IGBT
Collector to emitter
breakdown voltage
BV
CES
V
GE
= 0 V, I
C
= 1 mA 600 - - V
Temperature coefficient of
breakdown voltage
V
BR(CES)
/T
J
I
C
= 500 μA (25 °C to 125 °C) - 0.6 - V/°C
Collector to emitter voltage V
CE(ON)
V
GE
= 15 V, I
C
= 60 A - 2.14 2.49
V
V
GE
= 15 V, l
C
= 60 A, T
J
= 125 °C - 2.58 -
Gate threshold voltage V
GE(th)
V
CE
= V
GE
, I
C
= 500 μA 2.9 3.8 6.0 V
Temperature coefficient of
threshold voltage
V
GE(th)
/T
J
V
CE
= V
GE
, I
C
= 1 mA
(25 °C to 125 °C)
- -10.3 - mV/°C
Forward transconductance g
fe
V
CE
= 20 V, I
C
= 60 A - 75 - S
Transfer characteristics V
GE
V
CE
= 20 V, I
C
= 60 A - 5.7 - V
Collector to emitter
leakage current
I
CES
V
GE
= 0 V, V
CE
= 600 V - 0.008 0.1
mA
V
GE
= 0 V, V
CE
= 600 V, T
J
= 125 °C - 0.23 -
Gate to emitter leakage I
GES
V
GE
= ± 20 V - - ± 200 nA
ABSOLUTE MAXIMUM RATINGS
