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VS-100MT060WSP

P1-P3P4-P6P7-P9P10-P12
VS-100MT060WSP
www.vishay.com
Vishay Semiconductors
Revision: 10-Jun-15
4
Document Number: 95708
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the
compound. Lubricated threads.
Fig. 1 - Maximum Allowable Case Temperature vs.
Average Output Current (Single Phase Input Bridge
Output Current Ratings Characteristics)
Fig. 2 - Maximum Average On-State Power Loss vs.
Total Output Current (Single Phase Input Bridge
On-State Power Loss Characteristics)
Fig. 3 - Instantaneous On-State Current vs.
Instantaneous Voltage Drop (Single Phase Input Bridge
On-State Voltage Drop Characteristics)
Fig. 4 - Peak Wave On-State Current vs. Pulse Train Duration
(Single Phase Input Bridge Maximum Non-Repetitive
Surge Current (per Junction))
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL MIN. TYP. MAX. UNITS
Input Rectifier Bridge Junction to case thermal resistance per diode
R
thJC
- - 0.81
°C/W
PFC IGBT Junction to case IGBT thermal resistance - - 0.31
PFC Diode Junction to case PFC diode thermal resistance - - 0.58
AP Diode Junction to case AP diode thermal resistance - - 5.1
Case to sink, flat, greased surface per module R
thCS
-0.06-°C/W
Mounting torque ± 10 % to heatsink
(1)
--4Nm
Approximate weight - 65 - g
0
20
40
60
80
100
120
140
160
0 102030405060708090100
Maximum Allowable Case Temperature
(°C)
I
O
- Average Output Current (A)
180°
(Rect.)
180°
(Sine)
0
50
100
150
200
250
300
350
400
0 102030405060708090100
Maximum Average On-State Power Loss
(W)
I
O
- Total Output Current (A)
180°
(Rect.)
180°
(Sine)
1
10
100
1000
0 0.5 1.0 1.5 2.0 2.5 3.0
Instantaneous On-State Current (A)
Instantaneous Voltage Drop (V)
T
J
= 150 °C
T
J
= 25 °C
50
75
100
125
150
175
200
225
250
275
300
325
0.01 0.1 1
Peak Half Sine Wave On-State
Current (A)
Pulse Train Duration (s)
No voltage reapplied
Rated V
RRM
reapplied
A
t any rated load condition and with
rated V
RRM
applied following surgel
Initial T
J
= T
J
max.
VS-100MT060WSP
www.vishay.com
Vishay Semiconductors
Revision: 10-Jun-15
5
Document Number: 95708
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Z
thJC
vs. t
1
Rectangular Pulse Duration
(Maximum Input Bridge Thermal Impedance Z
thJC
Characteristics (per Junction))
Fig. 6 - Allowable Case Temperature vs. Continuous Collector
Current (Maximum PFC IGBT Continuous Collector Current vs.
Case Temperature)
Fig. 7 - I
C
vs. V
CE
(PFC IGBT Reverse BIAS SOA T
J
= 150 °C, V
GE
= 15 V)
Fig. 8 - I
C
vs. V
CE
(Typical PFC IGBT Output Characteristics, V
GE
= 15 V)
Fig. 9 - I
C
vs. V
CE
(Typical PFC IGBT Output Characteristics, T
J
= 125 °C)
0.01
0.1
1
10
0.0001 0.001 0.01 0.1 1 10
Z
thJC
- Thermal Impedance (°C/W)
t
1
- Rectangular Pulse Duration (s)
Steady State Value
R
thjc = 0.81°C
(DC Operation)
0
20
40
60
80
100
120
140
160
0 102030405060708090100110120
Allowable Case Temperature (°C)
I
C
- Continuous Collector Current (A)
DC
0.1
1
10
100
1000
1101001000
I
C
(A)
V
CE
(V)
0
20
40
60
80
100
120
140
160
180
200
0 1.0 2.0 3.0 4.0 5.0 6.0
I
C
(A)
V
CE
(V)
T
J
= 125 °C
T
J
= 25 °C
T
J
= 150 °C
V
GE
= 9 V
VS-100MT060WSP
www.vishay.com
Vishay Semiconductors
Revision: 10-Jun-15
6
Document Number: 95708
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 10 - I
C
vs. V
GE
(Typical PFC IGBT Transfer Characteristics)
Fig. 11 - V
GEth
vs. I
C
(Typical PFC IGBT Gate Threshold Voltage)
Fig. 12 - I
CES
vs. V
CES
(Typical PFC IGBT Zero Gate Voltage Collector Current)
Fig. 13 - I
F
vs. V
FM
(Typical Antiparallel Diode Forward Characteristics)
Fig. 14 - Allowable Case Temperature vs. Continuous Forward
Current (Maximum Antiparallel Diode Continuous
Forward Current vs. Case Temperature)
Fig. 15 - I
F
vs. V
FM
(Typical PFC Diode Forward Characteristics)
0
10
20
30
40
50
60
70
80
90
100
2345678
I
C
(A)
V
GE
(V)
T
J
= 25 °C
T
J
= 125 °C
V
CE
= 20 V
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
V
GEth
(V)
I
C
(mA)
T
J
= 25 °C
T
J
= 125 °C
0.0001
0.001
0.01
0.1
1
10
100200300400500600
I
CES
(mA)
V
CES
(V)
T
J
= 25 °C
T
J
= 125 °C
T
J
= 150 °C
0
10
20
30
40
50
60
70
80
90
100
0 0.5 1.0 1.5 2.0 2.5 3.0
I
F
(A)
V
FM
(V)
T
J
= 25 °C
T
J
= 125 °C
T
J
= 150 °C
0
20
40
60
80
100
120
140
160
02468101214161820
Allowable Case Temperature (°C)
I
F
- Continuous Forward Current (A)
DC
0
20
40
60
80
100
120
140
160
180
200
0 0.5 1.0 1.5 2.0 2.5
I
F
(A)
V
FM
(V)
T
J
= 25 °C
T
J
= 125 °C
T
J
= 150 °C
P1-P3P4-P6P7-P9P10-P12

VS-100MT060WSP

Mfr. #:
Buy VS-100MT060WSP
Manufacturer:
Vishay Semiconductors
Description:
IGBT Modules Output & SW Modules - MTP SWITCH-e3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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