VS-100MT060WSP
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Vishay Semiconductors
Revision: 10-Jun-15
7
Document Number: 95708
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Fig. 16 - Allowable Case Temperature vs. Continuous Forward
Current (Maximum PFC Diode Continuous Forward Current
vs. Case Temperature)
Fig. 17 - I
RM
vs. V
R
(Typical PFC Diode Reverse Leakage Current)
Fig. 18 - Energy Loss vs. I
C
(Typical PFC IGBT Energy Loss vs. I
C
)
T
J
= 125 °C, V
CC
= 300 V, R
g
= 4.7 , V
GE
= 15 V, L = 500 μH
Fig. 19 - Switching Time vs. I
C
(Typical PFC IGBT Switching Time vs. I
C
)
T
J
= 125 °C, V
CC
= 300 V, R
g
= 4.7 , V
GE
= 15 V, L = 500 μH
Fig. 20 - Energy Loss vs. R
g
(Typical PFC IGBT Energy Loss vs. R
g
)
T
J
= 125 °C, V
CC
= 300 V, I
C
= 100 A, V
GE
= 15 V, L = 500 μH
Fig. 21 - Switching Time vs. R
g
(Typical PFC IGBT Switching Time vs. R
g
)
T
J
= 125 °C, V
CC
= 300 V, I
C
= 100 A, V
GE
= 15 V, L = 500 μH
0
20
40
60
80
100
120
140
160
0 20406080100120140
Allowable Case Temperature (°C)
I
F
- Continuous Forward Current (A)
DC
0.00001
0.0001
0.001
0.01
0.1
1
100 200 300 400 500 600
I
RM
(mA)
V
R
(V)
T
J
= 25 °C
T
J
= 125 °C
T
J
= 150 °C
0
0.5
1
1.5
2
2.5
3
20 40 60 80 100 120 140 160
Energy (mJ)
I
C
(A)
E
off
E
on
10
100
1000
20 40 60 80 100 120 140 160
Switching Time (ns)
I
C
(A)
t
r
t
d(off)
t
d(on)
t
f
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0 5 10 15 20 25 30 35 40 45 50
Energy (mJ)
R
g
(
)
E
off
E
on
10
100
1000
10 000
0 5 10 15 20 25 30 35 40 45 50
Switching Time (ns)
R
g
(Ω)
t
d(off)
t
f
t
d(on)
t
r
