REV. B
AD8012
–3–
SINGLE SUPPLY
Parameter Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
3 dB Small Signal Bandwidth G = +1, V
OUT
< 0.4 V p-p, R
L
= 1 k 220 300 MHz
G=+2, V
OUT
< 0.4 V p-p, R
L
= 1 k 90 140 MHz
G=+2, V
OUT
< 0.4 V p-p, R
L
= 100 85 MHz
0.1 dB Bandwidth V
OUT
< 0.4 V p-p, R
L
= 1 k/100 43/24 MHz
Large Signal Bandwidth V
OUT
= 2 V p-p 60 MHz
Slew Rate V
OUT
= 3 V p-p 1,200 V/µs
Rise and Fall Time V
OUT
= 2 V p-p 2 ns
Settling Time 0.1%, V
OUT
= 2 V p-p 25 ns
0.02%, V
OUT
= 2 V p-p 40 ns
Overdrive Recovery 2 Overdrive 60 ns
NOISE/HARMONIC PERFORMANCE
Distortion V
OUT
= 2 V p-p, G = +2
Second Harmonic 500 kHz, R
L
= 1 k/100 87/71 dBc
5 MHz, R
L
= 1 k/100 77/61 dBc
Third Harmonic 500 kHz, R
L
= 1 k/100 89/72 dBc
5 MHz, R
L
= 1 k/100 78/52 dBc
Output IP3 500 kHz, R
L
= 1 k/100 30/40 dBm
IMD 500 kHz, R
L
= 1 k/100 77/80 dBc
Crosstalk 5 MHz, R
L
= 100 70 dB
Input Voltage Noise f = 10 kHz 2.5 nV/Hz
Input Current Noise f = 10 kHz, +Input, Input 15 pA/Hz
Black Level Clamped to +2 V, f = 3.58 MHz
Differential Gain R
L
= 150 /1 k 0.03/0.03 %
Differential Phase R
L
= 150 /1 k 0.4/0.08 Degrees
DC PERFORMANCE
Input Offset Voltage ± 1 ±3mV
T
MIN
T
MAX
±4mV
Open-Loop Transimpedance V
OUT
= 2 V p-p, R
L
= 100 200 400 k
T
MIN
T
MAX
150 k
INPUT CHARACTERISTICS
Input Resistance +Input 450 k
Input Capacitance +Input 2.3 pF
Input Bias Current +Input, Input ±3 ±12 µA
+Input, Input, T
MIN
T
MAX
±15 µA
Common-Mode Rejection Ratio V
CM
= 1.5 V to 3.5 V 56 60 dB
Input Common-Mode Voltage Range 1.5 to 3.5 1.2 to 3.8 V
OUTPUT CHARACTERISTICS
Output Resistance G = +2 0.1
Output Voltage Swing 1 to 4 0.9 to 4.2 V
Output Current T
MIN
T
MAX
50 100 mA
Short-Circuit Current 500 mA
POWER SUPPLY
Supply Current/Amp 1.55 1.75 mA
T
MIN
T
MAX
1.85 mA
Operating Range Single Supply 3 12 V
Power Supply Rejection Ratio 58 60 dB
Specifications subject to change without notice.
(@ T
A
= 25C, V
S
= +5 V, G = +2, R
L
= 100 , R
F
= R
G
= 750 , unless otherwise noted.)
REV. B–4–
AD8012
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated by the AD8012
is limited by the associated rise in junction temperature. The maxi-
mum safe junction temperature for plastic encapsulated devices
is determined by the glass transition temperature of the plastic,
approximately +150°C. Temporarily exceeding this limit may
cause a shift in parametric performance due to a change in the
stresses exerted on the die by the package. Exceeding a junction
temperature of +175°C for an extended period can result in
device failure.
The output stage of the AD8012 is designed for maximum load
current capability. As a result, shorting the output to common
can cause the AD8012 to source or sink 500 mA. To ensure
proper operation, it is necessary to observe the maximum power
derating curves. Direct connection of the output to either power
supply rail can destroy the device.
AMBIENT TEMPERATURE – C
–50
0
T
J
= 150C
2.0
1.5
1.0
MAXIMUM POWER DISSIPATION – W
8-LEAD SOIC
PACKAGE
–40 –30
010203040506070 8090
8-LEAD
MSOP
0.5
–20 –10
Figure 3. Plot of Maximum Power Dissipation vs.
Temperature for AD8012
0.1F
0.1F
10F
10F
R
L
V
IN
V
OUT
750 750
49.9
+V
S
–V
S
+
+
Test Circuit 1. Gain = +2
0.1F
0.1F
10F
10F
R
L
V
IN
V
OUT
750 750
53.6
+V
S
–V
S
+
+
Test Circuit 2. Gain = –1
Test Circuits
REV. B
AD8012
–5–
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection. Although the
AD8012 features proprietary ESD protection circuitry, permanent damage may occur on devices
subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended
to avoid performance degradation or loss of functionality.
ABSOLUTE MAXIMUM RATINGS
1
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.6 V
Internal Power Dissipation
2
SOIC Package (R) . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.8 W
MSOP Package (RM) . . . . . . . . . . . . . . . . . . . . . . . . 0.6 W
Input Voltage (Common Mode) . . . . . . . . . . . . . . . . . . . . ±V
S
Differential Input Voltage . . . . . . . . . . . . . . . . . . . . . . . ±2.5 V
Output Short-Circuit Duration
. . . . . . . . . . . . . . . . . .Observe Power Derating Curves
Storage Temperature Range RM, R . . . . . . 65°C to +125°C
Operating Temperature Range (A Grade) . . . 40°C to +85°C
Lead Temperature Range (Soldering 10 sec) . . . . . . . . . 300°C
NOTES
1
Stresses above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2
Specification is for device in free air at +25°C.
8-Lead SOIC Package:
JA
= 155°C/W
8-Lead MSOP Package:
JA
= 200°C/W
ORDERING GUIDE
Model Temperature Range Package Description Package Options Branding
AD8012AR 40°C to +85°C 8-Lead SOIC R-8
AD8012AR-REEL 40°C to +85°C13 Tape and Reel R-8
AD8012AR-REEL7 40°C to +85°C7 Tape and Reel R-8
AD8012ARM 40°C to +85°C 8-Lead MSOP RM-08 H6A
AD8012ARM-REEL 40°C to +85°C13 Tape and Reel RM-08 H6A
AD8012ARM-REEL7 40°C to +85°C7 Tape and Reel RM-08 H6A
AD8012ARMZ* 40°C to +85°C 8-Lead MSOP RM-08 H6A
AD8012ARMZ-REEL* 40°C to +85°C13 Tape and Reel RM-08 H6A
AD8012ARMZ-REEL7* 40°C to +85°C7 Tape and Reel RM-08 H6A
*Z = Pb-free product.

AD8012ARZ-REEL

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
High Speed Operational Amplifiers Dual Low Power Current Feedback
Lifecycle:
New from this manufacturer.
Delivery:
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